摘要:
A region surrounded by two gate wiring and two drain wiring includes pixels and when there is a defect of short-circuit in adjacent pixel electrodes, the short-circuited portion is removed by irradiating a laser via a mask having a transmission pattern, which corresponds to a pattern of the gate wiring, drain wiring and pixel electrodes in the short-circuited portion. The above short-circuited portion is identified and removed in comparison to a normal pattern, by use of information from an inspection apparatus, and the pattern defect formed on the substrate is automatically repaired. By applying the above method to a manufacturing process of display apparatus, in particular, to a resist pattern forming process, a display apparatus having a highly qualified display property may be achieved.
摘要:
A region surrounded by two gate wiring and two drain wiring includes pixels and when there is a defect of short-circuit in adjacent pixel electrodes, the short-circuited portion is removed by irradiating a laser via a mask having a transmission pattern, which corresponds to a pattern of the gate wiring, drain wiring and pixel electrodes in the short-circuited portion. The above short-circuited portion is identified and removed in comparison to a normal pattern, by use of information from an inspection apparatus, and the pattern defect formed on the substrate is automatically repaired. By applying the above method to a manufacturing process of display apparatus, in particular, to a resist pattern forming process, a display apparatus having a highly qualified display property may be achieved.
摘要:
An electrolytic processing apparatus which, while eliminating a CMP processing entirely or reducing a load on a CMP processing to the least possible extent, can process and flatten a conductive material formed in the surface of a substrate, or can remove (clean) extraneous matter adhering to the surface of a workpiece such as a substrate. The present invention includes an electrode section including a plurality of electrode members disposed in parallel, each electrode member including an electrode and an ion exchanger covering the surface of the electrode, a holder for holding a workpiece, which is capable of bringing the workpiece close to or into contact with the ion exchanger of the electrode member, and a power source to be connected to the electrode of each electrode member of the electrode section. The ion exchanger of the electrode member includes an ion exchanger having an excellent surface smoothness and an ion exchanger having a large ion exchange capacity.
摘要:
The present invention relates to a substrate processing apparatus and a substrate processing method for performing a chemical liquid process, a cleaning process, a drying process, or the like while rotating a substrate such as a semiconductor wafer or a liquid crystal substrate. The present invention also relates to a substrate holding apparatus for holding and rotating a substrate. The substrate processing apparatus (1) for processing a substrate (W) while supplying a fluid to the substrate (W) includes a substrate holder (11) for holding and rotating the substrate (W), and a holder suction unit (24) for sucking the fluid from the substrate holder (11). The substrate holding apparatus includes a plurality of rollers (20) which are brought into contact with an edge portion of a substrate (W) so as to hold and rotate the substrate (W), and at least one moving mechanism (303a) for moving the rollers (20).
摘要:
The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder 11 for holding a substrate W substantially horizontally and rotating the substrate W, and a processing liquid supply unit 15 for supplying a processing liquid onto a peripheral portion of the substrate W which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate W. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder 54 for holding a substrate W substantially horizontally and rotating the substrate W, and a cleaning liquid supply unit 53 having a cleaning liquid outlet 53a which is oriented from a center of the substrate W toward a peripheral portion of the substrate W with an elevation angle of not more than 45° from a surface of the substrate W. The cleaning liquid supply unit 53 supplies a cleaning liquid to the surface of the substrate W at a flow velocity of not less than 0.1 m/s.
摘要:
A method and device for regenerating an ion exchanger can regenerate an ion exchanger easily and quickly, and can minimize a load upon cleaning of the regenerated ion exchanger and disposal of waste liquid. A method for regenerating a contaminated ion exchanger includes: providing a pair of a regeneration electrode and a counter electrode, a partition disposed between the electrodes, and an ion exchanger to be regenerated disposed between the counter electrode and the partition; and applying a voltage between the regeneration electrode and the counter electrode while supplying a liquid between the partition and the regeneration electrode and also supplying a liquid between the partition and the counter electrode.
摘要:
The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder 11 for holding a substrate W substantially horizontally and rotating the substrate W, and a processing liquid supply unit 15 for supplying a processing liquid onto a peripheral portion of the substrate W which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate W. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder 54 for holding a substrate W substantially horizontally and rotating the substrate W, and a cleaning liquid supply unit 53 having a cleaning liquid outlet 53a which is oriented from a center of the substrate W toward a peripheral portion of the substrate W with an elevation angle of not more than 45° from a surface of the substrate W. The cleaning liquid supply unit 53 supplies a cleaning liquid to the surface of the substrate W at a flow velocity of not less than 0.1 m/s.
摘要:
The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder for holding a substrate substantially horizontally and rotating the substrate, and a processing liquid supply unit for supplying a processing liquid onto a peripheral portion of the substrate which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder for holding a substrate substantially horizontally and rotating the substrate, and a cleaning liquid supply unit having a cleaning liquid outlet which is oriented from a center of the substrate toward a peripheral portion of the substrate with an elevation angle of not more than 45° from a surface of the substrate. The cleaning liquid supply unit supplies a cleaning liquid to the surface of the substrate at a flow velocity of not less than 0.1 m/s.