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    cBN semiconductor device having an ohmic electrode and a method of making the same
    3.
    发明授权
    cBN semiconductor device having an ohmic electrode and a method of making the same 失效
    具有欧姆电极的cBN半导体器件及其制造方法

    公开(公告)号：US5414279A

    公开(公告)日：1995-05-09

    申请号：US124754

    申请日：1993-09-22

    申请人： Koh Era ,  Yoshiyuki Suda ,  Satoshi Agawa ,  Osamu Mishima

    发明人： Koh Era ,  Yoshiyuki Suda ,  Satoshi Agawa ,  Osamu Mishima

    IPC分类号： H01L21/28 ,  H01L29/43 ,  H01L29/45 ,  H01L33/30 ,  H01L33/40 ,  H01L23/48 ,  H01L29/46 ,  H01L29/62 ,  H01L29/64

    CPC分类号： H01L29/452 ,  Y10S148/113 ,  Y10S438/932

    摘要： An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type doped region of the cBN crystal or platinum is deposited onto a p-type doped region to thereby form an electrode with ohmic characteristic. The deposition of the molybdenum or the platinum is conducted by using a vapor deposition method followed by heating the attached substance at a temperature of 300.degree. C.-1100.degree. C. in an inactive gas atmosphere. The cBN semiconductor device can be used as a solid electronic element or an optoelectronic element for rectifiers, transistors, light emitting diodes and so on and integrated elements thereof.

    摘要翻译： 在cBN晶体上形成欧姆电极，形成用作固体电子元件的cBN半导体器件。 cBN半导体器件可以是n型，p型或pn结型，其中钼沉积到cBN晶体的n型掺杂区上，或者铂沉积到p型掺杂区上，从而形成 具有欧姆特性的电极。 通过使用气相沉积法，在惰性气体气氛中，在300℃〜1100℃的温度下加热附着物，进行钼或铂的沉积。 cBN半导体器件可以用作固体电子元件或用于整流器，晶体管，发光二极管等的光电元件及其集成元件。

    Production planning system
    4.
    发明授权
    Production planning system 失效
    生产计划制度

    公开(公告)号：US07039481B2

    公开(公告)日：2006-05-02

    申请号：US10357470

    申请日：2003-02-04

    申请人： Kiyohisa Kawase ,  Hajime Yuasa ,  Kazuhiko Maeda ,  Yoshio Kobayashi ,  Osamu Mishima ,  Takashi Honma ,  Jun Akashi ,  Hiroshi Yamada ,  Kenichiro Masunaga ,  Masahiro Koyama ,  Kenichi Funaki

    发明人： Kiyohisa Kawase ,  Hajime Yuasa ,  Kazuhiko Maeda ,  Yoshio Kobayashi ,  Osamu Mishima ,  Takashi Honma ,  Jun Akashi ,  Hiroshi Yamada ,  Kenichiro Masunaga ,  Masahiro Koyama ,  Kenichi Funaki

    IPC分类号： G06F19/00

    CPC分类号： G06Q10/06 ,  G05B2219/32086 ,  Y02P90/04 ,  Y02P90/20

    摘要： The production of semiconductor devices manufactured through a plurality of manufacturing sites is unitarily managed and an appropriate production plan is instructed. A computer projects a production plan of an entire company based on various information. The production plan is provided to each manufacturing site as a production instruction and provided to each business person or customer as a storing reply or an order accepting period reply. If the projected production plan (possible production volume) does not coincide with a production plan (necessary production volume), parameters obtained by correcting production allocation, production capability, lead time, yield and the like are re-input from a parameter input terminal. Based on the corrected parameters, the computer re-projects the production plan and projects an optimum production plan.

    摘要翻译： 通过多个制造场所制造的半导体器件的生产是一体管理的，并且指示了适当的生产计划。 计算机根据各种信息对整个公司的生产计划进行预测。 生产计划作为生产指导提供给每个制造现场，并作为存储答复或订单接受期回复提供给每个业务人员或客户。 如果预计的生产计划（可能的生产量）与生产计划（必要的生产量）不一致，则通过参数输入端重新输入通过校正生产分配，生产能力，提前期，产量等获得的参数。 根据修正的参数，计算机重新计划生产计划并制定最佳的生产计划。

    Method of making cBN semiconductor device having an ohmic electrode
    5.
    发明授权
    Method of making cBN semiconductor device having an ohmic electrode 失效
    制造具有欧姆电极的cBN半导体器件的方法

    公开(公告)号：US5444017A

    公开(公告)日：1995-08-22

    申请号：US305658

    申请日：1994-09-14

    申请人： Koh Era ,  Yoshiyuki Suda ,  Satoshi Agawa ,  Osamu Mishima

    发明人： Koh Era ,  Yoshiyuki Suda ,  Satoshi Agawa ,  Osamu Mishima

    IPC分类号： H01L21/28 ,  H01L29/43 ,  H01L29/45 ,  H01L33/30 ,  H01L33/40 ,  H01L21/283

    CPC分类号： H01L29/452 ,  Y10S148/113 ,  Y10S438/932

    摘要： An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type doped region of the cBN crystal or platinum is deposited onto a p-type doped region to thereby form an electrode with ohmic characteristic. The deposition of the molybdenum or the platinum is conducted by using a vapor deposition method followed by heating the attached substance at a temperature of 300.degree. C.-1100.degree. C. in an inactive gas atmosphere. The cBN semiconductor device can be used as a solid electronic element or an optoelectronic element for rectifiers, transistors, light emitting diodes and so on and integrated elements thereof.

    摘要翻译： 在cBN晶体上形成欧姆电极，形成用作固体电子元件的cBN半导体器件。 cBN半导体器件可以是n型，p型或pn结型，其中钼沉积到cBN晶体的n型掺杂区上，或者铂沉积到p型掺杂区上，从而形成 具有欧姆特性的电极。 通过使用气相沉积法，在惰性气体气氛中，在300℃〜1100℃的温度下加热附着物，进行钼或铂的沉积。 cBN半导体器件可以用作固体电子元件或用于整流器，晶体管，发光二极管等的光电元件及其集成元件。

    Slide driving apparatus of press machine
    6.
    发明授权
    Slide driving apparatus of press machine 失效
    压力机滑动驱动装置

    公开(公告)号：US5226337A

    公开(公告)日：1993-07-13

    申请号：US828045

    申请日：1992-01-30

    申请人： Shozo Imanishi ,  Masakazu Hashimoto ,  Touru Miyashita ,  Osamu Mishima ,  Takao Ito

    发明人： Shozo Imanishi ,  Masakazu Hashimoto ,  Touru Miyashita ,  Osamu Mishima ,  Takao Ito

    IPC分类号： B30B1/26 ,  B30B15/00

    CPC分类号： B30B15/0035 ,  B30B1/266 ,  Y10T74/18216 ,  Y10T74/18272 ,  Y10T74/19555

    摘要： A Slide driving apparatus of press machine, wherein a main gear 3 as a rotational drive member and a lever member 10 as a driven member are opposed to one another in a eccentric state which an axes O.sub.1 and O.sub.2 are separated, the main gear 3 and the lever member 10 being connected to one another by a connecting member 13 consisting of a pin member 11 and a bush member 12. A drive rotation locus A which can be traced, round the axis O.sub.1, by a movement of a connecting center O.sub.5 where the main gear 3 and the connecting member 13 are connected, and a driven rotation locus B which can be traced, round the axis O.sub.2, by a movement of a connecting center O.sub.4 where the lever member 10 and the connecting member 13 are connected, intersect one another at points of C and D. A slide of the press machine is connected, by the connecting rod, to an eccentric portion 8A of the crankshaft 8 where the lever member 10 is fixed.