公开(公告)号：US5869358A

公开(公告)日：1999-02-09

申请号：US923542

申请日：1997-09-04

申请人： Norbert Galster ,  Sven Klaka ,  Andre Weber

发明人： Norbert Galster ,  Sven Klaka ,  Andre Weber

IPC分类号： H01L21/332 ,  H01L29/08 ,  H01L29/74 ,  H01L29/744

CPC分类号： H01L21/263 ,  H01L29/0834 ,  H01L29/744

摘要： A two-stage method is proposed for producing a highly transparent anode emitter (2) in a GTO (1). In a first step, an anode emitter (2) is indiffused whose thickness is greater than 0.5 .mu.m and whose doping concentration is greater than 10.sup.17 cm.sup.-3. In a second step, the emitter efficiency of the anode emitter (2) is subsequently reduced to a desired degree by local carrier life setting.

摘要翻译： 提出了一种用于在GTO（1）中制造高度透明的阳极发射体（2）的两阶段方法。 在第一步骤中，阳极发射极（2）的厚度大于0.5μm，掺杂浓度大于1017cm-3。 在第二步骤中，阳极发射器（2）的发射极效率随后通过本地载流子寿命设定而减小到期望的程度。

公开(公告)号：US5977568A

公开(公告)日：1999-11-02

申请号：US116928

申请日：1998-07-17

申请人： Sven Klaka ,  Jan Voboril

发明人： Sven Klaka ,  Jan Voboril

IPC分类号： H01L23/36 ,  H01L23/22 ,  H01L23/48 ,  H01L29/74 ,  H01L23/06 ,  H01L23/16

CPC分类号： H01L24/72 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/04953 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/19043 ,  H01L2924/30107

摘要： The present invention discloses a power semiconductor component 1 having a special pressure contact system which is suitable, for example, for circuit-breakers, rectifiers, or the like in industrial drives. A pressure-equalizing element 9 in the form of a box 10, 15 with a flowable or plastically deformable medium 12 is inserted between a pressure plunger 7a and a power semiconductor 2. Because of the hydrostatic pressure in the box 10, an inhomogeneous pressure delivered at one side is passed on to the other side as a homogeneous pressure. A homogeneous pressure delivery can be achieved, even in the edge region of the pressure surfaces 11a, 11b, by means of an inlet camber of the lateral surface 13. The box 10, 15 preferably consists of copper or AlSiC, and the medium 12 of a liquid metal (Ga, Hg), a plastic metal (Pb, Al) or of metal balls (Cu) in silicone oil. The box can be arranged on one or both sides of one or more power semiconductors 2, and can also replace the molybdenum disks 3a, 3b or contact plates 4a, 4b.

摘要翻译： 本发明公开了一种具有特殊的压力接触系统的功率半导体元件1，其适用于例如工业驱动器中的断路器，整流器等。 具有可流动或可塑性变形的介质12的盒10,15形式的压力均衡元件9插入压力柱塞7a和功率半导体2之间。由于盒10中的静水压力，输送不均匀的压力 在一侧作为均匀的压力传递到另一侧。 即使在压力表面11a，11b的边缘区域，也可以通过侧表面13的入口侧面来实现均匀的压力输送。盒10,15优选地由铜或AlSiC组成，并且介质12 硅油中的液态金属（Ga，Hg），塑料金属（Pb，Al）或金属球（Cu）。 该盒可以布置在一个或多个功率半导体2的一侧或两侧上，并且还可以替换钼盘3a，3b或接触板4a，4b。

公开(公告)号：US09000827B2

公开(公告)日：2015-04-07

申请号：US13512041

申请日：2010-12-01

申请人： Sven Klaka ,  Samuel Hartmann

发明人： Sven Klaka ,  Samuel Hartmann

IPC分类号： H03K17/06 ,  H03K17/12

CPC分类号： H03K17/127 ,  H02M1/088 ,  H02M2001/325 ,  H03K17/06

摘要： A system includes at least two power semiconductor chips being connected in parallel and including each a gate terminal for switching the power semiconductor chip in a blocking-state by a first gate voltage and for switching the power semiconductor chip in a conducting-state by a second gate voltage. The system includes further a control device adapted for applying the first or the second gate voltage to the gate terminals of the at least two power semiconductor chips. The control device is adapted for applying a third gate voltage to the gate terminal of the at least one remaining power semiconductor chip when a power semiconductor chip fails, and that the third gate voltage is higher than the second gate voltage.

摘要翻译： 一种系统包括并联连接的至少两个功率半导体芯片，每个功率半导体芯片包括：每个栅极端子，用于通过第一栅极电压将功率半导体芯片以阻塞状态切换，并将功率半导体芯片以导通状态切换第二栅极电压 栅极电压。 该系统还包括适于将第一或第二栅极电压施加到至少两个功率半导体芯片的栅极端子的控制装置。 所述控制装置适于在功率半导体芯片发生故障时向所述至少一个剩余功率半导体芯片的栅极端子施加第三栅极电压，并且所述第三栅极电压高于所述第二栅极电压。

公开(公告)号：US20120262218A1

公开(公告)日：2012-10-18

申请号：US13512041

申请日：2010-12-01

申请人： Sven Klaka ,  Samuel Hartmann

发明人： Sven Klaka ,  Samuel Hartmann

IPC分类号： H03K17/06

CPC分类号： H03K17/127 ,  H02M1/088 ,  H02M2001/325 ,  H03K17/06

摘要： A system includes at least two power semiconductor chips being connected in parallel and including each a gate terminal for switching the power semiconductor chip in a blocking-state by a first gate voltage and for switching the power semiconductor chip in a conducting-state by a second gate voltage. The system includes further a control device adapted for applying the first or the second gate voltage to the gate terminals of the at least two power semiconductor chips. The control device is adapted for applying a third gate voltage to the gate terminal of the at least one remaining power semiconductor chip when a power semiconductor chip fails, and that the third gate voltage is higher than the second gate voltage.

摘要翻译： 一种系统包括并联连接的至少两个功率半导体芯片，每个功率半导体芯片包括：每个栅极端子，用于通过第一栅极电压将功率半导体芯片以阻塞状态切换，并将功率半导体芯片以导通状态切换第二栅极电压 栅极电压。 该系统还包括适于将第一或第二栅极电压施加到至少两个功率半导体芯片的栅极端子的控制装置。 所述控制装置适于在功率半导体芯片发生故障时向所述至少一个剩余功率半导体芯片的栅极端子施加第三栅极电压，并且所述第三栅极电压高于所述第二栅极电压。

公开(公告)号：US06441407B1

公开(公告)日：2002-08-27

申请号：US09582944

申请日：2000-12-19

申请人： Horst Gruning ,  Thomas Keller ,  Sven Klaka ,  Alexander Klett ,  Philippe Maibach ,  Bjorn Odegard ,  Jochen Rees

发明人： Horst Gruning ,  Thomas Keller ,  Sven Klaka ,  Alexander Klett ,  Philippe Maibach ,  Bjorn Odegard ,  Jochen Rees

IPC分类号： H02L2302

CPC分类号： H05K1/182 ,  H01L29/744

摘要： A semiconductor component including a housing for a semiconductor substrate, an anode, a cathode, an annular gate electrode flange, which laterally protrudes from the housing and concentrically surrounds the housing, and an annular auxiliary cathode flange, which protrudes from the housing and makes contact with the cathode.

摘要翻译： 一种半导体部件，包括用于半导体衬底的壳体，阳极，阴极，环形栅极电极凸缘，其从壳体侧向突出并同心地围绕壳体;以及环形辅助阴极凸缘，其从壳体突出并接触 与阴极。