摘要:
The invention relates to the use of oxime sulfonates of formula 1 ##STR1## wherein R is naphthyl, ##STR2## Ar is an unsubstituted aryl group or an aryl group which carries one or more than one substituent selected from the group consisting of nitro, chloro, bromo, hydroxyl, C.sub.1 -C.sub.4 alkyl, C.sub.1 -C.sub.4 perfluoroalkyl, C.sub.1 -C.sub.4 alkoxy and acid degradable substituent; R.sub.0 is either a R.sub.1 -X group or R.sub.2 ; X is an oxygen or a sulfur atom; R.sub.1 is hydrogen, C.sub.1 -C.sub.4 alkyl or unsubstituted phenyl or phenyl which is substituted by a member selected from the group consisting of chloro, bromo, C.sub.1 -C.sub.4 alkyl and C.sub.1 -C.sub.4 alkoxy, and R.sub.2 is hydrogen, C.sub.1 -C.sub.4 alkyl or an acid-degradable substituent, as radiation-sensitive photoacid generator in a chemically amplified photoresist which is developable in alkaline medium and is sensitive to radiation of a wavelength in the range from 340-390 nm, and to corresponding positive-working and negative-working photoresists for the cited wavelength range.
摘要:
The invention relates to the use of oxime sulfonates of formula 1 ##STR1## wherein R is naphthyl, ##STR2## Ar is an unsubstituted aryl group or an aryl group which carries one or more than one substituent selected from the group consisting of nitro, chloro, bromo, hydroxyl, C.sub.1 -C.sub.4 alkyl, C.sub.1 -C.sub.4 perfluoroalkyl, C.sub.1 -C.sub.4 alkoxy and acid degradable substituents;R.sub.0 is either a R.sub.1 --X group or R.sub.2 ;X is an oxygen or a sulfur atom;R.sub.1 is hydrogen, C.sub.1 -C.sub.4 alkyl or unsubstituted phenyl or phenyl which is substituted by a member selected from the group consisting of chloro, bromo, C.sub.1 -C.sub.4 alkyl and C.sub.1 -C.sub.4 alkoxy, andR.sub.2 is hydrogen, C.sub.1 -C.sub.4 alkyl or an acid-degradable substituent, as radiation-sensitive photoacid generator in a chemically amplified photoresist which is developable in alkaline medium and is sensitive to radiation of a wavelength in the range from 340-390 nm, and to corresponding positive-working and negative-working photoresists for the cited wavelength range.
摘要:
The invention relates to a chemically amplified negative photoresist which can be developed in aqueous alkaline media, which contains a radiation-sensitive acid generator and a compound which reduces the solubility of the resist in aqueous alkaline solutions in the presence of acid, and a polyhydroxyl compound of the formula I ##STR1## in which n is an integer between 2 and 6,R is hydrogen, halogen, C.sub.1 -C.sub.4 alkoxy or C.sub.1 -C.sub.4 alkyl, andZ is an n-valent radical which is unsubstituted or substituted by one or more substituents from the group consisting of hydroxyl, halogen and C.sub.1 -C.sub.4 alkoxy, and is selected from the group consisting of:a) aliphatic radicals having 1 to 12 carbon atoms,b) cycloaliphatic radicals having 5 to 20 carbon atoms,c) aromatic radicals having 6 to 20 carbon atoms andd) radicals having 7 to 30 carbon atoms which comprise at least two different structural units selected from aliphatic, cycloaliphatic or aromatic groups. The resists described make it possible to reduce the demands made on the focusing accuracy during imagewise exposure.
摘要:
Positive photoresist compositions comprising, in an organic solvent, at leasta) one alkali-soluble resin,b) one photosensitive quinone diazide,c) one aromatic hydroxy compound of formula I ##STR1## wherein each R is --H, C.sub.1 -C.sub.4 alkyl, C.sub.1 -C.sub.4 alkoxy, --OCH.sub.2 C.sub.6 H.sub.5, --OC.sub.6 H.sub.5 or --COOC.sub.1 -C.sub.4 alkyl, and R.sub.1 and R.sub.2 are each independently of the other H, C.sub.1 -C.sub.4 alkyl, --C.sub.6 H.sub.5 or a cycloaliphatic 5- or 6-membered ring, a is an integer from 0 to 4, and m and n are each independently of the other 0, 1 or 2, which compound enhances the photosensitivity and/or the rate of development, and optionallyd) additional customary modifiers, are eminently suitable for making relief structures.
摘要翻译:正性光致抗蚀剂组合物,其在有机溶剂中包含至少一种碱溶性树脂,b)一种光敏醌二叠氮化物,c)一种式I的芳族羟基化合物,其中每个R是-H,C1 C 1-4烷基,C 1 -C 4烷氧基,-OCH 2 C 6 H 5,-OC 6 H 5或-COOC 1 -C 4烷基,R 1和R 2各自独立地为H,C 1 -C 4烷基,-C 6 H 5或脂环族五元或六元环,a为 0至4的整数,m和n各自独立地为0,1或2,该化合物增强了光敏性和/或显影速率,并且任选地d)另外的常规改性剂特别适用于制备浮雕结构 。
摘要:
Positive photoresist compositions comprising, in an organic solvent, at leasta) one alkali-soluble resin,b) one photosensitive quinone diazide,c) one aromatic hydroxy compound of formula I ##STR1## wherein each R is --H, C.sub.1 -C.sub.4 alkyl, C.sub.1 -C.sub.4 alkoxy, --OCH.sub.2 C.sub.6 H.sub.5, --OC.sub.6 H.sub.5 or --COOC.sub.1 -C.sub.4 alkyl, and R.sub.1 and R.sub.2 are each independently of the other H, C.sub.1 -C.sub.4 alkyl, --C.sub.6 H.sub.5 or a cycloaliphatic 5- or 6-membered ring, a is an integer from 0 to 4, and m and n are each independently of the other 0, 1 or 2, which compound enhances the photosensitivity and/or the rate of development, and optionallyd) additional customary modifiers,are eminently suitable for making relief structures.
摘要翻译:正性光致抗蚀剂组合物,其在有机溶剂中包含至少一种碱溶性树脂,b)一种光敏醌二叠氮化物,c)一种式I的芳族羟基化合物(*化学结构*)(I),其中每个R是 - H,C 1 -C 4烷基,C 1 -C 4烷氧基,-OCH 2 C 6 H 5,-OC 6 H 5或-COOC 1 -C 4烷基,R 1和R 2各自独立地为H,C 1 -C 4烷基,-C 6 H 5或脂环族五元或六元环, a是0至4的整数,m和n各自独立地为0,1或2,该化合物增强光敏性和/或显影速率,以及任选地d)另外的常规改性剂,特别适用于 做救济结构。
摘要:
Polymers having a molecular weight (weight average) M.sub.w from 10.sup.3 to 10.sup.6, comprising recurring structural units of the formulae (I), (IIa) and (IIb) ##STR1## in which R.sub.1 is hydrogen or methyl, Y is a direct bond or a divalent radical of the formula (III) ##STR2## in which Z is a C.sub.1 -C.sub.6 alkylene group bound to the phenyl nucleus,OR.sub.2 is an acid-cleavable radical,in which R.sub.2 is C.sub.4 -C.sub.10 tert-alkyl, allyl, cyclohex-2-enyl, C.sub.6 -C.sub.14 aryl or C.sub.7 -C.sub.16 aralkyl which are unsubstituted or mono- or poly-substituted by C.sub.1 -C.sub.6 alkyl groups, C.sub.1 -C.sub.6 alkoxy groups or halogen atoms, trialkylsilyl or a group of the formulae (IV)-(VII) ##STR3## in which R.sub.8 is C.sub.1 -C.sub.6 alkyl, or C.sub.6 -C.sub.14 aryl or C.sub.7 -C.sub.16 aralkyl which are unsubstituted or mono- or poly-substituted by C.sub.1 -C.sub.6 alkyl groups, C.sub.1 -C.sub.6 alkoxy groups or halogen atoms,R.sub.3 and R.sub.4 independently of one another are hydrogen, C.sub.1 -C.sub.6 alkyl groups, C.sub.1 -C.sub.6 alkoxy groups or halogen atoms,R.sub.5 and R.sub.6 independently of one another are hydrogen or methyl,X is C.sub.1 -C.sub.6 alkylene and R.sub.7 is C.sub.1 -C.sub.6 alkyl, or C.sub.6 -C.sub.14 aryl or C.sub.7 -C.sub.16 aralkyl which are unsubstituted or mono- or poly-substituted by C.sub.1 -C.sub.6 alkyl groups, C.sub.1 -C.sub.6 alkoxy groups or halogen atoms, or is --CO--R.sub.8 in which R.sub.8 is as defined in formula (IV), are suitable for use in DUV positive photoresists which show greatly reduced delay time effects and are distinguished by a high thermal stability and high resolution capacity.
摘要:
Polymers having a molecular weight (weight average) M.sub.w from 10.sup.3 to 10.sup.6, comprising recurring structural units of the formulae (I), (IIa) and (IIb) ##STR1## in which R.sub.1 is hydrogen or methyl, Y is a direct bond or a divalent radical of the formula (III) ##STR2## in which Z is a C.sub.1 -C.sub.6 alkylene group bound to the phenyl nucleus,OR.sub.2 is an acid-cleavable radical,in which R.sub.2 is C.sub.4 -C.sub.10 tert-alkyl, allyl, cyclohex-2-enyl, C.sub.6 -C.sub.14 aryl or C.sub.7 -C.sub.16 aralkyl which are unsubstituted or mono- or poly-substituted by C.sub.1 -C.sub.6 alkyl groups, C.sub.1 -C.sub.6 alkoxy groups or halogen atoms, trialkylsilyl or a group of the formulae (IV)-(VII) ##STR3## in which R.sub.8 is C.sub.1 -C.sub.6 alkyl, or C.sub.6 -C.sub.14 aryl or C.sub.7 -C.sub.16 aralkyl which are unsubstituted or mono- or poly-substituted by C.sub.1 -C.sub.6 alkyl groups, C.sub.1 -C.sub.6 alkoxy groups or halogen atoms,R.sub.3 and R.sub.4 independently of one another are hydrogen, C.sub.1 -C.sub.6 alkyl groups, C.sub.1 -C.sub.6 alkoxy groups or halogen atoms,R.sub.5 and R.sub.6 independently of one another are hydrogen or methyl,X is C.sub.1 -C.sub.6 alkylene and R.sub.7 is C.sub.1 -C.sub.6 alkyl, or C.sub.6 -C.sub.14 aryl or C.sub.7 -C.sub.16 aralkyl which are unsubstituted or mono- or poly-substituted by C.sub.1 -C.sub.6 alkyl groups, C.sub.1 -C.sub.6 alkoxy groups or halogen atoms, or is --CO--R.sub.8 in which R.sub.8 is as defined in formula (IV),are suitable for use in DUV positive photoresists which show greatly reduced delay time effects and are distinguished by a high thermal stability and high resolution capacity.