公开(公告)号：US6074708A

公开(公告)日：2000-06-13

申请号：US217187

申请日：1998-12-22

申请人： Noriaki Onishi ,  Aya Miyazaki ,  Daisaku Matsunaga ,  Touru Ozaki

发明人： Noriaki Onishi ,  Aya Miyazaki ,  Daisaku Matsunaga ,  Touru Ozaki

IPC分类号： G03F7/031 ,  C08F2/50 ,  C09K19/54 ,  G02F1/1333 ,  G02F1/1339 ,  C09K19/38 ,  C09K19/52

CPC分类号： G02F1/133377 ,  C09K19/544 ,  G02F1/13394 ,  Y10S430/124 ,  Y10T428/10 ,  Y10T428/1005

摘要： A photoinitiator is represented by general formula (I): ##STR1## where n is an integer of 1 or greater; A and B are each a trans cyclohexane ring or a benzene ring, the benzene ring being allowed to include a fluorine atom or a methyl group as a substituent, the benzene ring adjacent to a carbonyl group being allowed to include a fluorine atom or a methyl group as a substituent; p and q are each 0 or 1, p and q are not simultaneously 0; X is an alkyl group of C.sub.1 through C.sub.3 or hydrogen atom, Y is a methyl group, ethyl group or alkoxy group of C.sub.1 through C.sub.3, and Z is a methyl group, ethyl group, alkyl-substituted phenyl group or a group represented by general formula (II), Y and Z being allowed to bonded together to form a ring: ##STR2## where A, B, n, p and q are identical with those in general formula (I).

摘要翻译： 光引发剂由通式（I）表示：其中n是1或更大的整数; A和B各自是反式环己烷环或苯环，苯环被允许包括氟原子或甲基作为取代基，邻近羰基的苯环被允许包括氟原子或甲基 基团作为取代基; p和q各自为0或1，p和q不同时为0; X是C1至C3或氢原子的烷基，Y是C1至C3的甲基，乙基或烷氧基，Z是甲基，乙基，烷基取代的苯基或由一般表示的基团 式（II）中，Y和Z被结合在一起形成环：其中A，B，n，p和q与通式（I）中的相同。

公开(公告)号：US06577356B2

公开(公告)日：2003-06-10

申请号：US09730743

申请日：2000-12-07

申请人： Noriaki Onishi ,  Aya Miyazaki

发明人： Noriaki Onishi ,  Aya Miyazaki

IPC分类号： G02F1133

CPC分类号： G02F1/13334 ,  G02F1/1337 ,  G02F2201/086

摘要： The liquid crystal display (LCD) device of the invention includes: a substrate; a dielectric layer; a liquid crystal layer sandwiched by the substrate and the dielectric layer; a plurality of stripe-shaped electrodes formed on a surface of the substrate facing the liquid crystal layer to extend in parallel with a first direction; and a plurality of stripe-shaped plasma channels formed to face the plurality of electrodes with the liquid crystal layer and the dielectric layer therebetween to extend in parallel with a second direction different from the first direction. The dielectric layer or an alignment layer formed on a surface of the dielectric layer facing the liquid crystal layer selectively attenuates ultraviolet rays emitted from the plasma channels.

摘要翻译： 本发明的液晶显示（LCD）装置包括：基板; 电介质层; 夹在基板和电介质层之间的液晶层; 多个条形电极，形成在所述基板的面向所述液晶层的表面上，以与第一方向平行地延伸; 以及多个条形等离子体通道，其形成为与液晶层和介电层面对多个电极，以与第一方向不同的第二方向平行延伸。 形成在面向液晶层的电介质层的表面上的介电层或取向层选择性地衰减从等离子体通道发射的紫外线。

公开(公告)号：US06388146B1

公开(公告)日：2002-05-14

申请号：US09237915

申请日：1999-01-27

申请人： Noriaki Onishi ,  Aya Miyazaki ,  Hoyo Mizobe ,  Masahiko Yoshida ,  Kenji Suzuki

发明人： Noriaki Onishi ,  Aya Miyazaki ,  Hoyo Mizobe ,  Masahiko Yoshida ,  Kenji Suzuki

IPC分类号： C07C1908

CPC分类号： C07C17/093 ,  C07C13/28 ,  C07C17/00 ,  C07C17/263 ,  C07C17/2635 ,  C07C17/35 ,  C07C17/354 ,  C07C22/08 ,  C07C25/18 ,  C07C25/24 ,  C07C43/215 ,  C07C43/225 ,  C07C45/00 ,  C07C45/46 ,  C07C205/11 ,  C07C205/12 ,  C07C47/55 ,  C07C49/792

摘要： The polymerizable compound of this invention is represented by general formula (I): where R is H, R′, R′O, R′COO, or R′OCO, R′ is a linear or branched alkyl group or alkenyl group having 1 to about 15 carbon atoms, A1 and A2 are independently a cyclohexane ring or a benzene ring which may include a substituent represented by formula (II) below; X is H or CH3; and Y1, Y2, Y3, and Y4 are independently H, F, Cl, CH3, CH3O, CF3, or CF3O wherein at least two of Y1, Y2, Y3, and Y4 are H and, if both A1 and A2 are cyclohexane rings, at least one of Y1, Y2, Y3, and Y4 is not H: where Y5, Y6, Y7, and Y8 are independently H, F, Cl, CH3, CH3O, CF3, or CF3O, at least two of Y5, Y6, Y7, and Y8 are H.

摘要翻译： 本发明的可聚合化合物由通式（I）表示：其中R是H，R'，R'O，R'COO或R'OCO，R'是具有1个碳原子的直链或支链烷基或烯基 至约15个碳原子，A1和A2独立地是可以包括由下式（II）表示的取代基的环己烷环或苯环; X是H或CH 3; Y1，Y2，Y3和Y4独立地为H，F，Cl，CH3，CH3O，CF3或CF3O，其中Y1，Y2，Y3和Y4中的至少两个为H，并且如果A1和A2均为环己烷环 Y 2，Y 3和Y 4中的至少一个不是H：其中Y5，Y6，Y7和Y8独立地为H，F，Cl，CH3，CH3O，CF3或CF3O，Y5，Y6中的至少两个 ，Y7和Y8为H.

公开(公告)号：US08442183B2

公开(公告)日：2013-05-14

申请号：US13036140

申请日：2011-02-28

申请人： Seiko Amano ,  Kouhei Toyotaka ,  Hiroyuki Miyake ,  Aya Miyazaki ,  Hideaki Shishido ,  Koji Kusunoki

发明人： Seiko Amano ,  Kouhei Toyotaka ,  Hiroyuki Miyake ,  Aya Miyazaki ,  Hideaki Shishido ,  Koji Kusunoki

IPC分类号： G11C19/00

CPC分类号： G11C19/28 ,  G09G3/3677 ,  G09G3/3696 ,  G09G2300/0809 ,  G09G2310/0286 ,  G11C19/184 ,  H01L25/03 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/1288 ,  H01L2924/0002 ,  H03K19/0013 ,  H05K7/02 ,  H01L2924/00

摘要： An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided.

摘要翻译： 目的在于提供能够稳定运行的脉冲信号输出电路和包括脉冲信号输出电路的移位寄存器。 根据所公开的发明的一个实施例的脉冲信号输出电路包括第一至第十晶体管。 沟道宽度W与第一晶体管的沟道长度L和第三晶体管的W / L的比W / L分别大于第六晶体管的W / L。 第五晶体管的W / L大于第六晶体管的W / L。 第五晶体管的W / L等于第七晶体管的W / L。 第三晶体管的W / L大于第四晶体管的W / L。 通过这样的结构，可以提供能够稳定运行的脉冲信号输出电路和包括脉冲信号输出电路的移位寄存器。

公开(公告)号：US07760552B2

公开(公告)日：2010-07-20

申请号：US11729216

申请日：2007-03-28

申请人： Hiroyuki Miyake ,  Mitsuaki Osame ,  Aya Miyazaki

发明人： Hiroyuki Miyake ,  Mitsuaki Osame ,  Aya Miyazaki

IPC分类号： G11C11/34

CPC分类号： G11C16/3436 ,  G11C16/26

摘要： The present invention provides nonvolatile semiconductor memory devices which operate with low power consumption. In a nonvolatile semiconductor memory device, a plurality of nonvolatile memory elements are connected in series. The plurality of nonvolatile memory elements include a semiconductor layer including a channel forming region and a control gate provided to overlap with the channel forming region. Operations of write, erase, a first read, and a second read in a verify operation of data to the nonvolatile memory elements, are conducted by changing voltage to the control gates of the nonvolatile memory elements. The second read in the verify operation after erase operation is conducted by changing only one of a potential of the control gate of a nonvolatile memory element which are selected from the plurality of nonvolatile memory elements, and as the potential, a potential different from a potential of the first read is used.

摘要翻译： 本发明提供了以低功耗工作的非易失性半导体存储器件。 在非易失性半导体存储器件中，多个非易失性存储器元件串联连接。 多个非易失性存储元件包括包括沟道形成区域的半导体层和设置成与沟道形成区域重叠的控制栅极。 通过将电压改变为非易失性存储器元件的控制栅极来进行对非易失性存储器元件的数据的验证操作的写入，擦除，第一读取和第二次读取操作。 在擦除操作之后的验证操作中的第二次读取是通过仅改变从多个非易失性存储元件中选择的非易失性存储元件的控制栅极的电位中的一个，并且作为电势，与电位不同的电位 的第一次读取被使用。

公开(公告)号：US20070164939A1

公开(公告)日：2007-07-19

申请号：US11652977

申请日：2007-01-10

申请人： Aya Miyazaki

发明人： Aya Miyazaki

IPC分类号： G09G3/30

CPC分类号： G09G3/3266 ,  G09G3/20 ,  G09G3/2022 ,  G09G2310/0216 ,  G09G2310/0262 ,  G09G2310/0267 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2330/021 ,  G11C19/00

摘要： It is an object of the present invention to provide a display device where power consumption can be suppressed and the number of gray scales can be increased without a scanning line driver circuit on both sides of a pixel portion. In a display device having a scanning line driver circuit, a shift register included in the scanning line driver circuit has 4m-stage (m is a natural number) flip-flop circuits in every m scanning lines, and a signal which selects the scanning line in a first half period of one scanning line selection period and a signal which selects the scanning line in a second half period of the one scanning line selection period are output to the scanning line by another start pulse.

摘要翻译： 本发明的目的是提供一种可以抑制功耗并且不增加像素部分的两侧的扫描线驱动电路的灰度级数的显示装置。 在具有扫描线驱动电路的显示装置中，包括在扫描线驱动电路中的移位寄存器在每m条扫描行中具有4m级（m为自然数）触发电路，并且选择扫描线 在一个扫描线选择期间的前半个周期中，在一个扫描线选择期间的后半段选择扫描线的信号，通过另一个起始脉冲输出到扫描线。

公开(公告)号：US6007739A

公开(公告)日：1999-12-28

申请号：US89942

申请日：1998-06-03

申请人： Akira Sakaigawa ,  Aya Miyazaki ,  Mitsuhiro Koden ,  Kazuhiko Tsuchiya ,  Kenji Suzuki

发明人： Akira Sakaigawa ,  Aya Miyazaki ,  Mitsuhiro Koden ,  Kazuhiko Tsuchiya ,  Kenji Suzuki

IPC分类号： G02F1/13 ,  C07D261/08 ,  C07D275/02 ,  C09K19/02 ,  C09K19/34 ,  C09K19/42 ,  G02F1/137 ,  G02F1/141 ,  C07D261/02 ,  C07D261/04

CPC分类号： C07D275/02 ,  C07D261/08 ,  C09K19/0225 ,  C09K19/3477 ,  C09K19/42 ,  G02F1/133555 ,  G02F1/141 ,  G02F2001/13712

摘要： A liquid crystal compound of the present invention is represented by the following general Formula I: ##STR1## wherein R.sub.1 and R.sub.2 are independently a linear or branched alkyl group or alkoxy group having 1 to 14 carbon atoms, provided that at least one of R.sub.1 and R.sub.2 is an alkyl group; --Y-- is a group represented by the following Formula (II) or (III); and X.sub.1, X.sub.2, X.sub.3, and X.sub.4 are independently a hydrogen atom or a fluorine atom: ##STR2##

摘要翻译： 本发明的液晶化合物由以下通式I表示：其中，R 1和R 2独立地为具有1至14个碳原子的直链或支链烷基或烷氧基，条件是R 1和R 2中的至少一个为 烷基; -Y-是由下式（II）或（III）表示的基团。 X 1，X 2，X 3和X 4独立地为氢原子或氟原子：

公开(公告)号：US5644371A

公开(公告)日：1997-07-01

申请号：US434487

申请日：1995-05-04

申请人： Mitsuhiro Koden ,  Aya Miyazaki ,  Tokihiko Shinomiya

发明人： Mitsuhiro Koden ,  Aya Miyazaki ,  Tokihiko Shinomiya

IPC分类号： G02F1/1335 ,  G02F1/1339 ,  G02F1/141

CPC分类号： G02F1/141 ,  G02F1/13394

摘要： A liquid crystal display device includes a ferroelectric liquid crystal layer. The ferroelectric liquid crystal molecules have pretilt directions defined by first direction vectors obtained by orthogonally projecting first imaginary vectors to each surface of a pair of substrates. The first imaginary vectors are parallel to the liquid crystal molecules in the ferroelectric liquid crystal layer in the vicinity of the substrates and directed away from each surface of the pair of substrates toward a center portion of the ferroelectric liquid crystal layer in its thickness direction. The ferroelectric liquid crystal layer has a chevron layered structure. A bending direction of the smectic layers is the same direction as the first direction vector obtained by orthogonally projecting a second imaginary vector to the substrates. The second imaginary vector is parallel to the smectic layers and is included in the same plane with the first imaginary vector and is directed away from the substrates toward the center of the ferroelectric liquid crystal layer. Walls made of insulating non-liquid crystal material are formed between the pair of substrates in a direction perpendicular to the surfaces of the pair of substrates and a light-shielding film is formed on either one of the substrates so that light does not pass through portions of the ferroelectric liquid crystal in a vicinity of a downstream side of the walls along the pretilt direction.

摘要翻译： 液晶显示装置包括铁电液晶层。 铁电液晶分子具有通过将第一虚数向量正交地投影到一对基板的每个表面而获得的第一方向向量限定的预倾斜方向。 第一虚数矢量与基板附近的铁电液晶层中的液晶分子平行，并且在一对基板的各表面朝着铁电液晶层的厚度方向的中心部分。 铁电液晶层具有V形层状结构。 近晶层的弯曲方向与通过将第二假想矢量正交地投影到基板而获得的第一方向矢量相同。 第二假想矢量与近晶层平行，并且与第一假想矢量包含在同一平面中，并且朝向铁电液晶层的中心远离衬底。 由绝缘非液晶材料构成的壁在垂直于一对基板的表面的方向上形成在一对基板之间，并且在任一个基板上形成遮光膜，使得光不通过部分 的铁电液晶沿着预倾斜方向在壁的下游侧附近。

公开(公告)号：US07737442B2

公开(公告)日：2010-06-15

申请号：US11474933

申请日：2006-06-27

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Aya Miyazaki

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Aya Miyazaki

IPC分类号： H01L27/146

CPC分类号： H01L29/42384 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of the present invention has a first conductive layer, a second conductive layer, an insulating layer which is formed between the first conductive layer and the second conductive layer and which has a contact hole, and a third conductive layer which is connected to the first conductive layer and the second conductive layer and of which at least a part of an end portion is formed inside the contact hole. Near a contact hole where the second conductive layer is connected to the third conductive layer, the third conductive layer does not overlap with the second conductive layer with the first insulating layer interposed therebetween and an end portion of the third conductive layer is not formed over the first insulating layer. This allows suppression of depression and projection of the third conductive layer.

摘要翻译： 本发明的半导体器件具有：第一导电层，第二导电层，形成在第一导电层和第二导电层之间并具有接触孔的绝缘层;以及第三导电层，其与 第一导电层和第二导电层，并且其中至少一部分端部形成在接触孔内。 在第二导电层连接到第三导电层的接触孔附近，第三导电层不与第二导电层重叠，其中第一绝缘层被插入，并且第三导电层的端部不形成在 第一绝缘层。 这允许抑制第三导电层的凹陷和投影。

公开(公告)号：US20080073647A1

公开(公告)日：2008-03-27

申请号：US11898749

申请日：2007-09-14

申请人： Ryo Arasawa ,  Aya Miyazaki ,  Shigeharu Monoe ,  Shunpei Yamazaki

发明人： Ryo Arasawa ,  Aya Miyazaki ,  Shigeharu Monoe ,  Shunpei Yamazaki

IPC分类号： H01L29/04 ,  H01L29/786

CPC分类号： H01L27/1266 ,  H01L27/124 ,  H01L29/78603 ,  H01L29/78606

摘要： An object is to provide a semiconductor device in which damages of an element such as a transistor are reduced even when physical force such as bending is externally applied to generate stress in the semiconductor device. A semiconductor device includes a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate, a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween, a first interlayer insulating film provided to cover the first conductive film, a second conductive film provided over the first interlayer insulating film so as to overlap with at least part of the impurity region, a second interlayer insulating film provided over the second conductive film, and a third conductive film provided over the second interlayer insulating film so as to be electrically connected to the impurity region through an opening.

摘要翻译： 本发明的目的是提供一种半导体器件，其中即使当外部施加诸如弯曲的物理力在半导体器件中产生应力时，诸如晶体管的元件的损伤也减小。 半导体器件包括：设置在基板上的沟道形成区域和杂质区域的半导体膜，设置在沟道形成区域上的栅极绝缘膜之间的第一导电膜，设置成覆盖的第一层间绝缘膜 所述第一导电膜，设置在所述第一层间绝缘膜上以与所述杂质区的至少一部分重叠的第二导电膜，设置在所述第二导电膜上的第二层间绝缘膜，以及设置在所述第二导电膜上的第二导电膜 层间绝缘膜，以通过开口与杂质区电连接。