CABINET FOR THIN DISPLAY DEVICE AND THIN DISPLAY DEVICE
    1.
    发明申请
    CABINET FOR THIN DISPLAY DEVICE AND THIN DISPLAY DEVICE 审中-公开
    用于薄显示装置和薄显示装置的柜

    公开(公告)号:US20140211440A1

    公开(公告)日:2014-07-31

    申请号:US14236835

    申请日:2012-05-24

    IPC分类号: H05K7/02

    CPC分类号: H05K7/02 H04N5/64

    摘要: Provided is technology that stably fixes a plurality of harnesses all at once, without using a wire holder. A line-shaping section 30 for routing harnesses 99 is created in a front cabinet forming section 20. The line-shaping section 30 comprises two ribs 40 separated by a prescribed distance and a hook 50 positioned in the center thereof and created so as to cover from the top, when viewed from the side surface. The harnesses 99 held by the ribs 40 and the hook are prevented from being displaced outside, by a hook locking section 54. In addition, routing work for the harnesses 99 is able to be performed smoothly since a sloping surface (a guide section 56) is created in a tip part of the hook locking section 54.

    摘要翻译: 所提供的技术是一次性地稳定地固定多个线束的技术,而不使用线保持器。 在前机柜形成部分20中产生用于路线线束99的线形成部分30.线形成部分30包括两个分开预定距离的肋40和位于其中心的钩50,并形成为覆盖 从顶部看,从侧面看。 通过钩锁定部分54防止由肋40和钩被保持的线束99向外移动。此外,由于倾斜表面(引导部分56)可以平滑地执行用于线束99的路线工作, 形成在钩锁定部分54的尖端部分中。

    Gold diffusion method for semiconductor devices of high switching speed
    2.
    发明授权
    Gold diffusion method for semiconductor devices of high switching speed 失效
    高开关速度半导体器件的金扩散方法

    公开(公告)号:US4963509A

    公开(公告)日:1990-10-16

    申请号:US450223

    申请日:1989-12-12

    IPC分类号: H01L21/22

    摘要: Gold is diffused into a silicon substrate by first depositing an ultrathin layer of gold on one of the main faces of the substrate and then by heating the substrate to a temperature range of about 300.degree.-850.degree. C., instead of to about 1000.degree. according to the prior art. Then, following the removal of the remaining gold layer from over the substrate, the latter is reheated to a higher temperature ranging from about 700.degree. C. to about 1000.degree. C. for activating the diffused gold. The gold diffusion at the reduced temperature serves to decrease the surface irregularities of the substrate as a result of gold-silicon alloy zones created at the interface between gold layer and silicon substrate during the thermal diffusion process.

    摘要翻译: 通过首先在衬底的一个主面上沉积超薄金层,然后通过将衬底加热到​​约300-850℃的温度范围而不是约1000℃,将金扩散到硅衬底中 根据现有技术。 然后,在从基底上除去剩余的金层之后,将后者再加热至约700℃至约1000℃的较高温度,以激活扩散的金。 在热扩散过程中,由于在金层和硅衬底之间的界面处产生金 - 硅合金区的结果,在降低的温度下的金扩散用于减小衬底的表面不规则性。

    XY SEPARATE CRANK MECHANISM AND DRIVING DEVICE PROVIDED THEREWITH
    3.
    发明申请
    XY SEPARATE CRANK MECHANISM AND DRIVING DEVICE PROVIDED THEREWITH 有权
    XY分离式起重机械及其驱动装置

    公开(公告)号:US20140041622A1

    公开(公告)日:2014-02-13

    申请号:US14060298

    申请日:2013-10-22

    IPC分类号: F16C3/06

    摘要: An XY separate crank mechanism provided between a movable body reciprocating in a first direction and a rotatable crankshaft to mutually convert reciprocating motion of the movable body and rotational motion of the crankshaft, includes a support member provided freely reciprocatingly in the first direction, a crank connecting member mounted on the support member freely reciprocatingly in a second direction perpendicular to the first direction and with which a crank of the crankshaft is rotatably engaged, and a connecting member configured to connect the piston and the support member and reciprocate in the first direction together with the piston and the support member.

    摘要翻译: 一种设置在沿第一方向往复运动的可移动体和可旋转曲轴之间以相互转换可移动体的往复运动和曲轴的旋转运动的XY分离曲柄机构,包括沿第一方向自由往复地设置的支撑构件,曲柄连接 所述构件在垂直于所述第一方向的第二方向上自由地平行地安装在所述支撑构件上,并且所述曲轴的曲柄可旋转地接合在所述第一方向上;连接构件,其构造成将所述活塞和所述支撑构件连接并沿着所述第一方向往复运动, 活塞和支撑构件。

    Observation and/or failure inspection apparatus, method and program therefor
    4.
    发明授权
    Observation and/or failure inspection apparatus, method and program therefor 失效
    观察和/或故障检查装置,方法和程序

    公开(公告)号:US06973395B2

    公开(公告)日:2005-12-06

    申请号:US10636860

    申请日:2003-08-07

    CPC分类号: G01R29/26

    摘要: An observation apparatus according to one embodiment can include a timing generating unit (2) that generates a timing signal at a predetermined period. A sampling unit (3) can sample a current observation signal of a power supply current on the basis of the timing signal, and store sampled data in data storing unit (5). A data number adjusting unit (6) can adjust the number of data samples to a number that is a power of two. An arithmetic operating unit (4) can Fourier-transform the adjusted data to generate frequency spectrum results of the current observation signal. In addition, a failure inspection apparatus according to one embodiment analyzes the frequency spectrum of an integrated circuit under observation to determine a failure condition of the integrated circuit.

    摘要翻译: 根据一个实施例的观察装置可以包括定时产生单元(2),其在预定周期产生定时信号。 采样单元(3)可以基于定时信号对电源电流的当前观测信号进行采样,并将采样数据存储在数据存储单元(5)中。 数据编号调整单元(6)可以将数据样本的数量调整为2的幂数。 算术运算单元(4)可对经调整的数据进行傅立叶变换,生成当前观测信号的频谱结果。 此外,根据一个实施例的故障检查装置分析观察中的集成电路的频谱,以确定集成电路的故障状态。

    WIRE HOLDER MOUNTING STRUCTURE AND DISPLAY DEVICE
    5.
    发明申请
    WIRE HOLDER MOUNTING STRUCTURE AND DISPLAY DEVICE 审中-公开
    电线架安装结构和显示设备

    公开(公告)号:US20150108287A1

    公开(公告)日:2015-04-23

    申请号:US14383813

    申请日:2012-08-20

    IPC分类号: H05K5/02

    CPC分类号: H05K5/0204

    摘要: Provided is a technology which makes an undercut portion small and reduces a limit on a mold structure in a wire holder mounting structure. A holder fixing portion (30) formed in a cabinet (20) is configured by including a box portion (32) and a holding rib (40). The box portion (32) has an open in an upper side in drawings, and is configured by right and left wall surfaces (32a), a rear wall surface (32b) and a bottom surface (32c). A holder mounting hole (34) is formed in the rear wall surface (32b), and a wire holder (90) is inserted in a direction of the holder mounting hole (34) (direction of an arrow X1 in the drawings) to be fixed. In the fixed state, a leaf spring portion (92) (holding portion) of the wire holder (90) is placed so as to be in contact with the holding rib (40).

    摘要翻译: 本发明提供一种技术,其使得底切部分较小并且减少了线架安装结构中的模具结构的极限。 形成在机壳(20)中的保持器固定部(30)通过包括箱部(32)和保持肋(40)构成。 盒部(32)在图中上方开放,由左右壁面(32a),后壁面(32b)和底面(32c)构成。 在后壁面32b上形成有保持架安装孔34,沿保持架安装孔34的方向(图中箭头X1的方向)插入线架90。 固定。 在固定状态下,线保持架(90)的板簧部(92)(保持部)被放置成与保持肋40接触。

    XY separate crank mechanism and driving device provided therewith
    6.
    发明授权
    XY separate crank mechanism and driving device provided therewith 有权
    XY分离曲柄机构及其驱动装置

    公开(公告)号:US09316249B2

    公开(公告)日:2016-04-19

    申请号:US14060298

    申请日:2013-10-22

    摘要: An XY separate crank mechanism provided between a movable body reciprocating in a first direction and a rotatable crankshaft to mutually convert reciprocating motion of the movable body and rotational motion of the crankshaft, includes a support member provided freely reciprocatingly in the first direction, a crank connecting member mounted on the support member freely reciprocatingly in a second direction perpendicular to the first direction and with which a crank of the crankshaft is rotatably engaged, and a connecting member configured to connect the piston and the support member and reciprocate in the first direction together with the piston and the support member.

    摘要翻译: 一种设置在沿第一方向往复运动的可移动体和可旋转曲轴之间以相互转换可移动体的往复运动和曲轴的旋转运动的XY分离曲柄机构,包括沿第一方向自由往复地设置的支撑构件,曲柄连接 所述构件在垂直于所述第一方向的第二方向上自由地平行地安装在所述支撑构件上,并且所述曲轴的曲柄可旋转地接合在所述第一方向上;连接构件,其构造成将所述活塞和所述支撑构件连接并沿着所述第一方向往复运动, 活塞和支撑构件。

    Digital-to-analog converter
    7.
    发明授权
    Digital-to-analog converter 失效
    数模转换器

    公开(公告)号:US5818375A

    公开(公告)日:1998-10-06

    申请号:US777343

    申请日:1996-12-27

    申请人: Yutaka Yoshizawa

    发明人: Yutaka Yoshizawa

    CPC分类号: H03M7/302

    摘要: A digital-to-analog converter comprises a digital signal processing unit for receipt of input digital signals and delta-sigma modulation of the input digital signals by over-sampling so as to generate a noise shape digital signal and a digital-to-analog converter coupled to the digital signal processing unit for receipt of the noise shape digital signal from the digital signal processing unit and conversion of the noise shape digital signal into an analog signal, wherein the digital signal processing unit comprises at least a series connection of a plurality of noise shapers.

    摘要翻译: 数模转换器包括数字信号处理单元,用于通过过采样来接收输入数字信号和输入数字信号的Δ-Σ调制,以产生噪声形状数字信号和数模转换器 耦合到所述数字信号处理单元,用于从所述数字信号处理单元接收所述噪声形状数字信号,并将所述噪声形状数字信号转换为模拟信号,其中所述数字信号处理单元至少包括多个 噪音整形机。

    Bidirectional triode thyristor
    8.
    发明授权
    Bidirectional triode thyristor 失效
    双向三极晶闸管

    公开(公告)号:US4994885A

    公开(公告)日:1991-02-19

    申请号:US370385

    申请日:1989-06-22

    申请人: Yutaka Yoshizawa

    发明人: Yutaka Yoshizawa

    IPC分类号: H01L29/747

    CPC分类号: H01L29/747

    摘要: A Triac comprising a semiconductor body having several regions of two opposite conductivity types, a first main electrode and a gate electrode on one major surface of the semiconductor body, and a second main electrode on the opposite major surface of the semiconductor body. The semiconductor body has an internal first n-type region between a first p-type region, exposed at the one major surface of the body, and a second p-type region exposed at the opposite major surface of the body. The first main electrode contacts the first p-type region and a second n-type region formed therein. The gate electrode contacts a third n-type region also formed in the first p-type region. Additionally, instead of contacting the first p-type region itself, the gate electrode contact a peninsular or insular portion of the first p-type region filling a corresponding recess in the third n-type region. This arrangement reduces the magnitude of the trigger current flowing between first main electrode and gate electrode, with the consequent enhancement of a triggering sensitivity.

    摘要翻译: 一种三端双向可控硅开关元件,包括具有两个相反导电类型的几个区域的半导体本体,半导体主体的一个主表面上的第一主电极和栅极电极以及半导体主体的相对主表面上的第二主电极。 半导体本体具有在主体的一个主表面处露出的第一p型区域和暴露在主体的相对主表面处的第二p型区域之间的内部第一n型区域。 第一主电极接触形成在其中的第一p型区域和第二n型区域。 栅电极接触也形成在第一p型区域中的第三n型区域。 此外,代替接触第一p型区域本身,栅电极接触填充第三n型区域中的相应凹部的第一p型区域的半岛或岛状部分。 这种布置减小了在第一主电极和栅电极之间流动的触发电流的大小,从而提高了触发灵敏度。

    Process for the fabrication of silicon transistors with high DC current
gain
    9.
    发明授权
    Process for the fabrication of silicon transistors with high DC current gain 失效
    用于制造具有高直流电流增益的硅晶体管的工艺

    公开(公告)号:US3943014A

    公开(公告)日:1976-03-09

    申请号:US546126

    申请日:1975-01-31

    申请人: Yutaka Yoshizawa

    发明人: Yutaka Yoshizawa

    摘要: A monocrystalline silicon wafer is prepared which has formed therein the usual emitter, base and collector regions. A groove is then formed to a predetermined depth in the top surface of the silicon wafer so as to extend along the P-N junction between the base and emitter regions. A silicon oxide layer is formed over the wafer, as by heating the same in an oxidative atmosphere, and the wafer is succeedingly heated in a hydrogenous atmosphere. The silicon oxide layer may be selectively photoetched away where the electrodes are to be formed for the emitter, base and collector of the transistor.

    摘要翻译: 制备在其中形成通常的发射极,基极和集电极区域的单晶硅晶片。 然后在硅晶片的顶表面中形成一个预定深度的凹槽,以沿着基极和发射极区之间的P-N结延伸。 通过在氧化气氛中加热氧化硅层,在晶片上形成氧化硅层,并且在氢气氛中继续加热晶片。 可以选择性地将氧化硅层光刻,其中将为晶体管的发射极,基极和集电极形成电极。