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1.发明授权Method for the producing of a light-emitting semiconductor chip, method for the production of a conversion die and light-emitting semiconductor chip 有权用于制造发光半导体芯片的方法，用于制造转换晶片和发光半导体芯片的方法公开(公告)号：US08492182B2
公开(公告)日：2013-07-23
申请号：US13098240
申请日：2011-04-29
申请人： Norwin Von Malm , Madis Raukas , Darshan Kundaliya
发明人： Norwin Von Malm , Madis Raukas , Darshan Kundaliya
CPC分类号： H05B33/10 , H01L27/156 , H01L2933/0041
摘要： A light-emitting semiconductor chip is provided, the semiconductor chip comprising a semiconductor body having a pixel region with at least two electrically isolated sub-regions, each sub-region comprising an active layer, which generates electromagnetic radiation of a first wavelength range during operation, a separately manufactured ceramic conversion die over a radiation emission area of at least one sub-region, said conversion die being configured to convert radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, wherein a width of the conversion die does not exceed 100 μm. Further, a method for the production of a light-emitting semiconductor chip and method for the production of a conversion die are provided.
摘要翻译： 提供了一种发光半导体芯片，所述半导体芯片包括具有至少两个电隔离子区域的像素区域的半导体本体，每个子区域包括有源层，其在操作期间产生第一波长范围的电磁辐射 ，在至少一个子区域的辐射发射区域上分开制造的陶瓷转换管芯，所述转换管芯被配置为将第一波长范围的辐射转换成第二波长范围的电磁辐射，其中转换管芯的宽度 不超过100个妈妈。 此外，提供了一种制造发光半导体芯片的方法和用于制造转换晶片的方法。
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2.发明申请Method for the Producing of a Light-Emitting Semiconductor Chip, Method for the Production of a Conversion Die and Light-Emitting Semiconductor Chip 有权用于制造发光半导体芯片的方法，用于制造转换晶片和发光半导体芯片的方法公开(公告)号：US20120273807A1
公开(公告)日：2012-11-01
申请号：US13098240
申请日：2011-04-29
申请人： Norwin Von Malm , Madis Raukas , Darshan Kundaliya
发明人： Norwin Von Malm , Madis Raukas , Darshan Kundaliya
CPC分类号： H05B33/10 , H01L27/156 , H01L2933/0041
摘要： A light-emitting semiconductor chip is provided, the semiconductor chip comprising a semiconductor body having a pixel region with at least two electrically isolated sub-regions, each sub-region comprising an active layer, which generates electromagnetic radiation of a first wavelength range during operation, a separately manufactured ceramic conversion die over a radiation emission area of at least one sub-region, said conversion die being configured to convert radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, wherein a width of the conversion die does not exceed 100 μm. Further, a method for the production of a light-emitting semiconductor chip and method for the production of a conversion die are provided.
摘要翻译： 提供了一种发光半导体芯片，所述半导体芯片包括具有至少两个电隔离子区域的像素区域的半导体本体，每个子区域包括有源层，其在操作期间产生第一波长范围的电磁辐射 ，在至少一个子区域的辐射发射区域上分开制造的陶瓷转换管芯，所述转换管芯被配置为将第一波长范围的辐射转换成第二波长范围的电磁辐射，其中转换管芯的宽度 不超过100μm。 此外，提供了一种制造发光半导体芯片的方法和用于制造转换晶片的方法。
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公开(公告)号：US09373761B2
公开(公告)日：2016-06-21
申请号：US14494281
申请日：2014-09-23
CPC分类号： H01L33/508 , H01L33/005 , H01L33/44 , H01L33/502 , H01L33/505 , H01L33/507 , H01L2933/0041 , H01L2933/0091
摘要： There is herein described a patterned thin-film wavelength converter which comprises a substrate having a first patterned surface with a first pattern, and a thin film deposited on the first patterned surface. The thin film consists of a wavelength converting material and has a second patterned surface that is distal from the substrate. The second patterned surface has a second pattern that is substantially the same as the first pattern of the substrate. An advantage of the patterned thin-film wavelength converter is that post-deposition processing is not required to produce a textured surface on the wavelength converting material. A method of making the patterned thin-film wavelength converter is also described.
摘要翻译： 这里描述了一种图案化的薄膜波长转换器，其包括具有第一图案的第一图案化表面的衬底和沉积在第一图案化表面上的薄膜。 薄膜由波长转换材料组成，并且具有远离基底的第二图案化表面。 第二图案化表面具有与基板的第一图案基本相同的第二图案。 图案化薄膜波长转换器的优点在于不需要后处理工艺来在波长转换材料上产生织构表面。 还描述了制造图案化薄膜波长转换器的方法。
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公开(公告)号：US20160087167A1
公开(公告)日：2016-03-24
申请号：US14494281
申请日：2014-09-23
CPC分类号： H01L33/508 , H01L33/005 , H01L33/44 , H01L33/502 , H01L33/505 , H01L33/507 , H01L2933/0041 , H01L2933/0091
摘要： There is herein described a patterned thin-film wavelength converter which comprises a substrate having a first patterned surface with a first pattern, and a thin film deposited on the first patterned surface. The thin film consists of a wavelength converting material and has a second patterned surface that is distal from the substrate. The second patterned surface has a second pattern that is substantially the same as the first pattern of the substrate. An advantage of the patterned thin-film wavelength converter is that post-deposition processing is not required to produce a textured surface on the wavelength converting material. A method of making the patterned thin-film wavelength converter is also described.
摘要翻译： 这里描述了一种图案化的薄膜波长转换器，其包括具有第一图案的第一图案化表面的衬底和沉积在第一图案化表面上的薄膜。 薄膜由波长转换材料组成，并且具有远离基底的第二图案化表面。 第二图案化表面具有与基板的第一图案基本相同的第二图案。 图案化薄膜波长转换器的优点在于不需要后处理工艺来在波长转换材料上产生织构表面。 还描述了制造图案化薄膜波长转换器的方法。
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公开(公告)号：US08937332B2
公开(公告)日：2015-01-20
申请号：US13982667
申请日：2012-01-31
申请人： Darshan Kundaliya , Madis Raukas , Adam M. Scotch , David Hamby , Kailash Mishra , Matthew Stough
发明人： Darshan Kundaliya , Madis Raukas , Adam M. Scotch , David Hamby , Kailash Mishra , Matthew Stough
CPC分类号： H01L33/502 , C09K11/7701 , C09K11/7721 , C09K11/7774 , C30B23/025 , C30B23/066 , C30B29/68 , Y10T428/24942
摘要： A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of ±15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.
摘要翻译： 描述了一种用于LED的波长转换器，其包括具有立方晶体结构的单晶石榴石基底，第一晶格参数和取向晶体面。 外延层直接形成在基板的取向晶面上。 该层由具有立方晶体结构的单晶石榴石荧光体和与第一晶格参数不同的第二晶格参数组成，其中第一晶格参数和第二晶格参数之间的差异导致在± 15％。 通过晶格失配在荧光体层中诱发的应变当诱发拉伸应变时将磷光体的发射移动到更长的波长，并且当产生压缩应变时将其发射到较短的波长。 优选地，波长转换器安装在蓝色LED的发光表面上以产生LED光源。
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公开(公告)号：US08884330B2
公开(公告)日：2014-11-11
申请号：US13086185
申请日：2011-04-13
申请人： Madis Raukas , Adam M. Scotch , Yi Zheng , Darshan Kundaliya
发明人： Madis Raukas , Adam M. Scotch , Yi Zheng , Darshan Kundaliya
CPC分类号： H01L33/505 , H01L2933/0041 , H01L2933/0091
摘要： A wavelength-converting structure for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting structure includes a thin film structure having a non-uniform top surface. The non-uniform top surface is configured increase extraction of light from the top surface of a wavelength-converting structure.
摘要翻译： 用于波长转换发光二极管（LED）组件的波长转换结构。 波长转换结构包括具有不均匀顶表面的薄膜结构。 配置不均匀的顶表面增加了从波长转换结构的顶表面提取光。
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公开(公告)号：US20120261688A1
公开(公告)日：2012-10-18
申请号：US13086185
申请日：2011-04-13
申请人： Madis Raukas , Adam M. Scotch , Yi Zheng , Darshan Kundaliya
发明人： Madis Raukas , Adam M. Scotch , Yi Zheng , Darshan Kundaliya
IPC分类号： H01L33/50
CPC分类号： H01L33/505 , H01L2933/0041 , H01L2933/0091
摘要： A wavelength-converting structure for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting structure includes a thin film structure having a non-uniform top surface. The non-uniform top surface is configured increase extraction of light from the top surface of a wavelength-converting structure.
摘要翻译： 用于波长转换发光二极管（LED）组件的波长转换结构。 波长转换结构包括具有不均匀顶表面的薄膜结构。 配置不均匀的顶表面增加了从波长转换结构的顶表面提取光。
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8.发明申请Wavelength Converter for an LED, Method of Making, and LED Containing Same 有权用于LED的波长转换器，制造方法和包含相同的LED公开(公告)号：US20130313603A1
公开(公告)日：2013-11-28
申请号：US13982667
申请日：2012-01-31
申请人： Darshan Kundaliya , Madis Raukas , Adam M. Scotch , David Hamby , Kailash Mishra , Matthew Stough
发明人： Darshan Kundaliya , Madis Raukas , Adam M. Scotch , David Hamby , Kailash Mishra , Matthew Stough
CPC分类号： H01L33/502 , C09K11/7701 , C09K11/7721 , C09K11/7774 , C30B23/025 , C30B23/066 , C30B29/68 , Y10T428/24942
摘要： A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of ±15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.
摘要翻译： 描述了一种用于LED的波长转换器，其包括具有立方晶体结构的单晶石榴石基底，第一晶格参数和取向晶体面。 外延层直接形成在基板的取向晶面上。 该层由具有立方晶体结构的单晶石榴石荧光体和与第一晶格参数不同的第二晶格参数组成，其中第一晶格参数和第二晶格参数之间的差异导致在± 15％。 通过晶格失配在荧光体层中诱发的应变当诱发拉伸应变时将磷光体的发射移动到更长的波长，并且当产生压缩应变时将其发射到较短的波长。 优选地，波长转换器安装在蓝色LED的发光表面上以产生LED光源。
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公开(公告)号：US10236658B2
公开(公告)日：2019-03-19
申请号：US14623016
申请日：2015-02-16
申请人： Alan Lenef , John Kelso , Darshan Kundaliya
发明人： Alan Lenef , John Kelso , Darshan Kundaliya
摘要： There is herein described a light source comprising a semiconductor device emitting a primary light, a thermally conductive optic having a reflective coating and a wavelength converter having a front surface and a rear surface. The optic is mounted to the rear surface of the wavelength converter and the primary light impinges on the wavelength converter in an emission region. The wavelength converter converts at least a portion of the primary light into a secondary light that is emitted from the front and rear surfaces of the converter and the optic reflects secondary light emitted from the rear surface back into the emission region. The light source may be used in either transmissive or reflective configurations.
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公开(公告)号：US20160111608A1
公开(公告)日：2016-04-21
申请号：US14932642
申请日：2015-11-04
申请人： Darshan Kundaliya , Kailash Mishra
发明人： Darshan Kundaliya , Kailash Mishra
CPC分类号： H01L33/504 , C25D13/00 , F21V9/08 , F21V9/30 , G02F1/353 , G02F1/3555 , H01L33/50 , H01L2933/0041 , H05B33/26
摘要： Thin film wavelength converters and methods for making the same are disclosed. In some embodiments, the thin film converters include a first thin film layer of first wavelength conversion material, a conductive layer, and a second thin film layer of a second wavelength conversion material. In one embodiment, a photoresist mask is applied to the conductive layer to form a pattern of by which the second wavelength conversion material may be applied by electrophoretic deposition to the exposed regions of the surface of the conductive layer.
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