公开(公告)号：US10968531B2

公开(公告)日：2021-04-06

申请号：US15416448

申请日：2017-01-26

Applicant: Novellus Systems, Inc.

Inventor： Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

IPC: C25D21/12 ,  C25D5/00 ,  C25D17/00 ,  H01L21/288 ,  C25D7/12 ,  C25D17/06 ,  G03F7/16 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

公开(公告)号：US09587322B2

公开(公告)日：2017-03-07

申请号：US14686479

申请日：2015-04-14

Applicant: Novellus Systems, Inc.

Inventor： Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

IPC: C25D17/06 ,  C25D7/12 ,  C25D5/00 ,  C25D17/00 ,  H01L21/288

CPC classification number: C25D21/12 ,  C25D5/00 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  G03F7/16 ,  G03F7/20 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53228

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

Abstract translation: 本文描述的方法将晶片进入电解质，使得由于晶片和/或晶片保持器与电解质的初始冲击而引起的空气滞留减少，并且晶片以这样的方式移动，使得在浸渍期间保持电解质润湿波前 该晶片还使空气截留最小化。

公开(公告)号：US20150218727A1

公开(公告)日：2015-08-06

申请号：US14686479

申请日：2015-04-14

Applicant: Novellus Systems, Inc.

Inventor： Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

IPC: C25D17/06 ,  H01L21/288 ,  C25D7/12

CPC classification number: C25D21/12 ,  C25D5/00 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  G03F7/16 ,  G03F7/20 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53228

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

Abstract translation: 本文描述的方法将晶片进入电解质，使得由于晶片和/或晶片保持器与电解质的初始冲击而引起的空气滞留减少，并且晶片以这样的方式移动，使得在浸渍期间保持电解质润湿波前 该晶片还使空气截留最小化。

公开(公告)号：US20170137958A1

公开(公告)日：2017-05-18

申请号：US15416448

申请日：2017-01-26

Applicant: Novellus Systems, Inc.

Inventor： Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

IPC: C25D21/12 ,  C25D17/06 ,  H01L21/768 ,  H01L23/532 ,  G03F7/20 ,  H01L21/288 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  C25D17/00 ,  H01L23/522

CPC classification number: C25D21/12 ,  C25D5/00 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  G03F7/16 ,  G03F7/20 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53228

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.