公开(公告)号：US20180030611A1

公开(公告)日：2018-02-01

申请号：US15730061

申请日：2017-10-11

Applicant: Novellus Systems, Inc.

Inventor： Tighe A. Spurlin ,  Charles Lorenzo Merrill ,  Ludan Huang ,  Matthew Sherman Thorum ,  Lee J. Brogan ,  James E. Duncan ,  Frederick Dean Wilmot ,  Robert Marshall Stowell ,  Steven T. Mayer ,  Haiying Fu ,  David W. Porter ,  Shantinath Ghongadi ,  Jonathan David Reid ,  Hyosang S. Lee ,  Mark J. Willey

IPC: C25D21/14 ,  C25D17/00 ,  C25D3/38 ,  C25D21/18 ,  C25D21/12

CPC classification number: C25D21/14 ,  C25D3/38 ,  C25D17/001 ,  C25D17/002 ,  C25D21/12 ,  C25D21/18

Abstract: Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

公开(公告)号：US20160222541A1

公开(公告)日：2016-08-04

申请号：US15093435

申请日：2016-04-07

Applicant: Novellus Systems, Inc.

Inventor： Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

IPC: C25D21/12 ,  H01L21/288 ,  C25D7/12

CPC classification number: C25D17/12 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D17/10 ,  C25D21/12 ,  H01L21/2885

Abstract: Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.

公开(公告)号：US20170137958A1

公开(公告)日：2017-05-18

申请号：US15416448

申请日：2017-01-26

Applicant: Novellus Systems, Inc.

Inventor： Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

IPC: C25D21/12 ,  C25D17/06 ,  H01L21/768 ,  H01L23/532 ,  G03F7/20 ,  H01L21/288 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  C25D17/00 ,  H01L23/522

CPC classification number: C25D21/12 ,  C25D5/00 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  G03F7/16 ,  G03F7/20 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53228

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

公开(公告)号：US10968531B2

公开(公告)日：2021-04-06

申请号：US15416448

申请日：2017-01-26

Applicant: Novellus Systems, Inc.

Inventor： Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

IPC: C25D21/12 ,  C25D5/00 ,  C25D17/00 ,  H01L21/288 ,  C25D7/12 ,  C25D17/06 ,  G03F7/16 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

公开(公告)号：US10351968B2

公开(公告)日：2019-07-16

申请号：US15093435

申请日：2016-04-07

Applicant: Novellus Systems, Inc.

Inventor： Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

IPC: C25D17/00 ,  C25D17/12 ,  C25D17/06 ,  C25D17/10 ,  C25D7/12 ,  H01L21/288 ,  C25D21/12

Abstract: Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved. The consumable anode in one implementation has a plurality of through channels and at least one depression on its surface (e.g., a depression surrounding a channel) that is configured for registering with a protrusion on a component of an anode assembly, such as with a support plate. Fasteners may pass through the channels in the anode and attach it to a charge plate.

公开(公告)号：US09587322B2

公开(公告)日：2017-03-07

申请号：US14686479

申请日：2015-04-14

Applicant: Novellus Systems, Inc.

Inventor： Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

IPC: C25D17/06 ,  C25D7/12 ,  C25D5/00 ,  C25D17/00 ,  H01L21/288

CPC classification number: C25D21/12 ,  C25D5/00 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  G03F7/16 ,  G03F7/20 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53228

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

Abstract translation: 本文描述的方法将晶片进入电解质，使得由于晶片和/或晶片保持器与电解质的初始冲击而引起的空气滞留减少，并且晶片以这样的方式移动，使得在浸渍期间保持电解质润湿波前 该晶片还使空气截留最小化。

公开(公告)号：US09340893B2

公开(公告)日：2016-05-17

申请号：US14678686

申请日：2015-04-03

Applicant: Novellus Systems, Inc.

Inventor： Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

IPC: C25D17/12 ,  C25D17/00 ,  C25D17/06 ,  C25D17/10 ,  C25D7/12

CPC classification number: C25D17/12 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D17/10 ,  C25D21/12 ,  H01L21/2885

Abstract: Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.

公开(公告)号：US20150218727A1

公开(公告)日：2015-08-06

申请号：US14686479

申请日：2015-04-14

Applicant: Novellus Systems, Inc.

Inventor： Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

IPC: C25D17/06 ,  H01L21/288 ,  C25D7/12

CPC classification number: C25D21/12 ,  C25D5/00 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  G03F7/16 ,  G03F7/20 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53228

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

Abstract translation: 本文描述的方法将晶片进入电解质，使得由于晶片和/或晶片保持器与电解质的初始冲击而引起的空气滞留减少，并且晶片以这样的方式移动，使得在浸渍期间保持电解质润湿波前 该晶片还使空气截留最小化。

公开(公告)号：US20150211144A1

公开(公告)日：2015-07-30

申请号：US14678686

申请日：2015-04-03

Applicant: Novellus Systems, Inc.

Inventor： Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

IPC: C25D17/12

CPC classification number: C25D17/12 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D17/10 ,  C25D21/12 ,  H01L21/2885

Abstract: Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.

Abstract translation: 描述了用于电镀的设备和方法。 本文描述的装置包括阳极支撑件，其包括定位机构，其在电镀期间保持晶片表面和可消耗阳极表面之间的一致的距离。 实现更均匀性的控制。