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40 条记录 (耗时 0.037 秒)

    Electroplating apparatus for tailored uniformity profile
    1.
    发明授权
    Electroplating apparatus for tailored uniformity profile 有权

    公开(公告)号：US11549192B2

    公开(公告)日：2023-01-10

    申请号：US17247991

    申请日：2021-01-04

    申请人： Novellus Systems, Inc.

    发明人： Steven T. Mayer ,  David W. Porter ,  Bryan L. Buckalew ,  Robert Rash

    IPC分类号： C25D17/00 ,  C25D5/18 ,  C25D17/12 ,  C25D21/12 ,  C25D17/06 ,  C25D7/12 ,  H01L21/288 ,  C25D21/10 ,  C25D5/04 ,  H01L21/768

    摘要： An electroplating apparatus for electroplating metal on a substrate includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, and an azimuthally asymmetric auxiliary electrode configured to be biased both anodically and cathodically during electroplating. The azimuthally asymmetric auxiliary electrode (which may be, for example, C-shaped), can be used for controlling azimuthal uniformity of metal electrodeposition by donating and diverting ionic current at a selected azimuthal position. In another aspect, an electroplating apparatus for electroplating metal includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, a shield configured to shield current at the periphery of the substrate; and an azimuthally asymmetric auxiliary anode configured to donate current to the shielded periphery of the substrate at a selected azimuthal position on the substrate.

    Cross flow manifold for electroplating apparatus
    4.
    发明授权
    Cross flow manifold for electroplating apparatus 有权

    公开(公告)号：US10190230B2

    公开(公告)日：2019-01-29

    申请号：US15448472

    申请日：2017-03-02

    申请人： Novellus Systems, Inc.

    发明人： Richard Abraham ,  Steven T. Mayer ,  Bryan L. Buckalew ,  Robert Rash

    IPC分类号： C25D17/06 ,  C25D17/00 ,  C25D5/18 ,  C25D5/04 ,  C25D3/00 ,  C25D5/08 ,  C25D7/12 ,  C25D17/02 ,  C25D21/10 ,  C25D17/08 ,  H01L21/288 ,  H01L21/768 ,  H01L23/00

    摘要： The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

    Methods and apparatus for wetting pretreatment for through resist metal plating
    5.
    发明授权
    Methods and apparatus for wetting pretreatment for through resist metal plating 有权

    公开(公告)号：US10128102B2

    公开(公告)日：2018-11-13

    申请号：US15424198

    申请日：2017-02-03

    申请人： Novellus Systems, Inc.

    发明人： Lee Peng Chua ,  Bryan L. Buckalew ,  Thomas Anand Ponnuswamy ,  Brian Paul Blackman ,  Chad Michael Hosack ,  Steven T. Mayer

    IPC分类号： B08B3/02 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

    摘要： Disclosed are pre-wetting apparatus designs and methods for cleaning solid contaminants from substrates prior to through resist deposition of metal. In some embodiments, a pre-wetting apparatus includes a process chamber having a substrate holder, and at least one nozzle located directly above the wafer substrate and configured to deliver pre-wetting liquid (e.g., degassed deionized water) onto the substrate at a grazing angle of between about 5 and 45 degrees. In some embodiments the nozzle is a fan nozzle configured to deliver the liquid to the center of the substrate, such that the liquid first impacts the substrate in the vicinity of the center and then flows over the center of the substrate. In some embodiments the substrate is rotated unidirectionally or bidirectionally during pre-wetting with multiple accelerations and decelerations, which facilitate removal of contaminants.

    Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
    8.
    发明授权
    Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating 有权
    电镀液中电解质流体动力学的有效传播

    公开(公告)号：US09523155B2

    公开(公告)日：2016-12-20

    申请号：US14103395

    申请日：2013-12-11

    申请人： Novellus Systems, Inc.

    发明人： Steven T. Mayer ,  Bryan L. Buckalew ,  Haiying Fu ,  Thomas Ponnuswamy ,  Hilton Diaz Camilo ,  Robert Rash ,  David W. Porter

    IPC分类号： C25D17/00 ,  C25D21/22 ,  G01N27/333 ,  C25D5/08 ,  C25D7/12 ,  C25D21/12

    CPC分类号： C25D21/12 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D17/002

    摘要： The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

    摘要翻译： 本文的实施例涉及将一种或多种材料电镀到衬底上的方法和装置。 在许多情况下，材料是金属，并且衬底是半导体晶片，尽管实施例不限于此。 通常，这里的实施例利用位于基板附近的通道板，通过通道板在底部形成交叉流动歧管，顶部由衬底限定，并在侧面由横流限制环形成。 在电镀期间，流体通过通道板的通道向上穿过十字流量歧管，并横向穿过位于交叉流限制环一侧的横流侧入口。 流动路径在交叉流动歧管中组合并且在与横流入口相对的横向流出口处出口。 这些组合的流动路径导致改善的电镀均匀性。

    Apparatus for advanced packaging applications
    9.
    发明授权
    Apparatus for advanced packaging applications 有权
    高级包装应用的装置

    公开(公告)号：US09449808B2

    公开(公告)日：2016-09-20

    申请号：US13904283

    申请日：2013-05-29

    申请人： Novellus Systems, Inc.

    发明人： Bryan L. Buckalew ,  Steven T. Mayer ,  David Porter ,  Thomas A. Ponnuswamy

    IPC分类号： C23F1/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/67 ,  G03F7/42 ,  H01L21/311

    CPC分类号： H01L21/31133 ,  C25D5/022 ,  C25D7/12 ,  G03F7/42 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02052 ,  H01L21/30604 ,  H01L21/6708 ,  H01L21/6838

    摘要： The embodiments disclosed herein pertain to novel methods and apparatus for removing material from a substrate. In certain embodiments, the method and apparatus are used to remove negative photoresist, though the disclosed techniques may be implemented to remove a variety of materials. In practicing the disclosed embodiments, a stripping solution may be introduced from an inlet to an internal manifold, sometimes referred to as a cross flow manifold. The solution flows laterally through a relatively narrow cavity between the substrate and the base plate. Fluid exits the narrow cavity at an outlet, which is positioned on the other side of the substrate, opposite the inlet and internal manifold. The substrate spins while in contact with the stripping solution to achieve a more uniform flow over the face of the substrate. In some embodiments, the base plate includes protuberances which operate to increase the flow rate (and thereby increase the local Re) near the face of the substrate.

    摘要翻译： 本文公开的实施例涉及用于从衬底去除材料的新颖方法和设备。 在某些实施例中，尽管公开的技术可以被实现以去除各种材料，但是使用该方法和装置来去除负光致抗蚀剂。 在实践所公开的实施例中，剥离溶液可以从入口引入内部歧管，有时称为横流歧管。 溶液横向流过衬底和基板之间的较窄的空腔。 流体在出口处离开狭窄的空腔，出口位于基板的另一侧，与入口和内部歧管相对。 衬底在与剥离溶液接触的同时旋转，以在衬底的表面上实现更均匀的流动。 在一些实施例中，基板包括用于增加靠近基板的表面的流速（从而增加局部Re）的突起。