公开(公告)号：US20150267306A1

公开(公告)日：2015-09-24

申请号：US14731063

申请日：2015-06-04

Applicant: Novellus Systems, Inc.

Inventor： Steven T. Mayer ,  Eric G. Webb ,  David W. Porter

IPC: C23F1/18

CPC classification number: C23F1/18 ,  C23F1/02 ,  C23F1/34 ,  C23F3/04 ,  C25D5/48 ,  C25D7/123 ,  C25D17/001 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Exposed copper regions on a semiconductor substrate can be etched by a wet etching solution comprising (i) one or more complexing agents selected from the group consisting of bidentate, tridentate, and quadridentate complexing agents; and (ii) an oxidizer, at a pH of between about 5 and 12. In many embodiments, the etching is substantially isotropic and occurs without visible formation of insoluble species on the surface of copper. The etching is useful in a number of processes in semiconductor fabrication, including for partial or complete removal of copper overburden, for planarization of copper surfaces, and for forming recesses in copper-filled damascene features. Examples of suitable etching solutions include solutions comprising a diamine (e.g., ethylenediamine) and/or a triamine (e.g., diethylenetriamine) as bidentate and tridentate complexing agents respectively and hydrogen peroxide as an oxidizer. In some embodiments, the etching solutions further include pH adjustors, such as sulfuric acid, aminoacids, and carboxylic acids.

Abstract translation: 可以通过湿式蚀刻溶液蚀刻半导体衬底上的暴露的铜区域，所述湿蚀刻溶液包含（i）一种或多种选自二齿，三齿和四齿络合剂的络合剂; 和（ii）pH在约5和12之间的氧化剂。在许多实施方案中，蚀刻基本上是各向同性的，并且在铜的表面上没有可见的不可见物质形成。 该蚀刻在半导体制造中的许多工艺中是有用的，包括部分或全部去除铜覆盖层，用于铜表面的平坦化，以及用于在铜填充的镶嵌特征中形成凹陷。 合适的蚀刻溶液的实例包括分别作为二齿和三齿络合剂的二胺（例如乙二胺）和/或三胺（例如二亚乙基三胺）和作为氧化剂的过氧化氢的溶液。 在一些实施方案中，蚀刻溶液还包括pH调节剂，例如硫酸，氨基酸和羧酸。

公开(公告)号：US09447505B2

公开(公告)日：2016-09-20

申请号：US14731063

申请日：2015-06-04

Applicant: Novellus Systems, Inc.

Inventor： Steven T. Mayer ,  Eric G. Webb ,  David W. Porter

IPC: C23F1/00 ,  C23F1/18 ,  C23F1/02 ,  C23F1/34 ,  C23F3/04 ,  C25D5/48 ,  H01L21/02 ,  H01L21/288 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/768 ,  H01L23/532 ,  C25D7/12 ,  C25D17/00

CPC classification number: C23F1/18 ,  C23F1/02 ,  C23F1/34 ,  C23F3/04 ,  C25D5/48 ,  C25D7/123 ,  C25D17/001 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Exposed copper regions on a semiconductor substrate can be etched by a wet etching solution comprising (i) one or more complexing agents selected from the group consisting of bidentate, tridentate, and quadridentate complexing agents; and (ii) an oxidizer, at a pH of between about 5 and 12. In many embodiments, the etching is substantially isotropic and occurs without visible formation of insoluble species on the surface of copper. The etching is useful in a number of processes in semiconductor fabrication, including for partial or complete removal of copper overburden, for planarization of copper surfaces, and for forming recesses in copper-filled damascene features. Examples of suitable etching solutions include solutions comprising a diamine (e.g., ethylenediamine) and/or a triamine (e.g., diethylenetriamine) as bidentate and tridentate complexing agents respectively and hydrogen peroxide as an oxidizer. In some embodiments, the etching solutions further include pH adjustors, such as sulfuric acid, aminoacids, and carboxylic acids.

公开(公告)号：US20140014522A1

公开(公告)日：2014-01-16

申请号：US13948551

申请日：2013-07-23

Applicant: Novellus Systems, Inc.

Inventor： Steven T. Mayer ,  John Stephen Drewery ,  Eric G. Webb

IPC: C25D5/02

CPC classification number: C25D5/022 ,  C25F5/00 ,  H05K3/07 ,  H05K3/108 ,  H05K2203/0108 ,  H05K2203/0392 ,  H05K2203/0537 ,  H05K2203/0713

Abstract: Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.

Abstract translation: 进行选择性加速或选择性抑制金属沉积以形成电子器件的金属结构。 将所需的促进剂或抑制剂的图案施加到基材上; 例如，通过用图案化的印模冲压基板或使用喷墨打印机喷涂溶液。 在其它实施方案中，将全局加速剂或抑制剂层施加到基底上并以期望的图案选择性地修饰。 此后，进行选择性金属沉积。