-
公开(公告)号：US10044960B2
公开(公告)日：2018-08-07
申请号：US15164276
申请日：2016-05-25
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin , Siguang Ma , Dajiang Yang , Boyd Albert Fowler
Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.
-
公开(公告)号：US20170347047A1
公开(公告)日：2017-11-30
申请号：US15164276
申请日：2016-05-25
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin , Siguang Ma , Dajiang Yang , Boyd Albert Fowler
CPC classification number: H04N5/374 , H01L27/14612 , H01L27/14641 , H04N5/23229 , H04N5/3559 , H04N5/3592 , H04N5/37452 , H04N5/37457
Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.
-
公开(公告)号：US10062722B2
公开(公告)日：2018-08-28
申请号：US15284961
申请日：2016-10-04
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Sohei Manabe , Keiji Mabuchi , Takayuki Goto , Vincent Venezia , Boyd Albert Fowler , Eric A. G. Webster
IPC: H01L27/148 , H01L27/146
CPC classification number: H01L27/14634 , H01L27/14612 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L27/1469
Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.
-
公开(公告)号：US20180097030A1
公开(公告)日：2018-04-05
申请号：US15284961
申请日：2016-10-04
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Sohei Manabe , Keiji Mabuchi , Takayuki Goto , Vincent Venezia , Boyd Albert Fowler , Eric A. G. Webster
IPC: H01L27/146
CPC classification number: H01L27/14634 , H01L27/14612 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L27/1469
Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.
-
-
-
Search Results
4
records
(took 0.013 seconds)
