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公开(公告)号：US09386240B1
公开(公告)日：2016-07-05
申请号：US14656341
申请日：2015-03-12
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Robert Johansson , Trygve Willassen
CPC classification number: H04N5/341 , H03M1/466 , H03M1/468 , H04N3/155 , H04N5/3559 , H04N5/37452 , H04N5/378
Abstract: An image sensor, readout circuitry for an image sensor, and a method of operating readout circuitry are disclosed. Readout circuitry includes an analog-to-digital-converter (“ADC”) including input stage circuitry with a first selectable input and a second selectable input. The ADC is coupled to sequentially receive a first reset signal, a second reset signal, a high gain image signal, and a low gain image signal, in that order. The input stage circuitry is configured to select the first selectable input when receiving the first reset signal and the low gain image signal and select the second selectable input when receiving the second reset signal and the high gain image signal.
Abstract translation: 公开了一种用于图像传感器的图像传感器，读出电路和操作读出电路的方法。 读出电路包括模数转换器（“ADC”），其包括具有第一可选输入和第二可选输入的输入级电路。 ADC依次依次接收第一复位信号，第二复位信号，高增益图像信号和低增益图像信号。 输入级电路被配置为当接收第一复位信号和低增益图像信号时选择第一可选择输入，并且当接收第二复位信号和高增益图像信号时选择第二可选择输入。
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公开(公告)号：US09041842B2
公开(公告)日：2015-05-26
申请号：US13940710
申请日：2013-07-12
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Trygve Willassen
IPC: H04N3/14 , H04N5/378 , H04N5/374 , H04N5/3745
CPC classification number: H04N5/378 , H04N5/3559 , H04N5/374 , H04N5/3745
Abstract: An image sensor includes a pixel array including a plurality of pixel cells each including a floating diffusion node, a photosensitive element coupled to selectively transfer image charge to the floating diffusion node, and a feedback coupling capacitor coupled between the floating diffusion node and an output line. A bit line is coupled to selectively readout image data output from each one of a group of the plurality of pixel cells. An integrator is capacitively coupled to the bit line. The integrator is coupled to output an output signal on the output line in response to the image data. The output signal on the output line is capacitively coupled to the floating diffusion node through the feedback coupling capacitor to suppress a potential swing at the floating diffusion node of each one of the group of the plurality of pixel cells in response to the output signal.
Abstract translation: 图像传感器包括像素阵列，其包括多个像素单元，每个像素单元包括浮动扩散节点，耦合以选择性地将图像电荷传送到浮动扩散节点的感光元件以及耦合在浮动扩散节点和输出线之间的反馈耦合电容器 。 位线被耦合以选择性地读出从多个像素单元的组中的每一个输出的图像数据。 积分器电容耦合到位线。 积分器被耦合以响应于图像数据在输出线上输出输出信号。 输出线上的输出信号通过反馈耦合电容电容耦合到浮动扩散节点，以便响应输出信号抑制多个像素单元组中的每一个的浮动扩散节点的电位摆动。
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公开(公告)号：US10044960B2
公开(公告)日：2018-08-07
申请号：US15164276
申请日：2016-05-25
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin , Siguang Ma , Dajiang Yang , Boyd Albert Fowler
Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.
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Patent Agency Ranking
公开(公告)号：US20180098008A1
公开(公告)日：2018-04-05
申请号：US15285352
申请日：2016-10-04
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin
IPC: H04N5/361 , H04N5/374 , H04N5/378 , H01L27/146
CPC classification number: H04N5/361 , H01L27/14636 , H01L27/14656 , H04N5/374 , H04N5/378
Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.
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公开(公告)号：US20170347047A1
公开(公告)日：2017-11-30
申请号：US15164276
申请日：2016-05-25
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin , Siguang Ma , Dajiang Yang , Boyd Albert Fowler
CPC classification number: H04N5/374 , H01L27/14612 , H01L27/14641 , H04N5/23229 , H04N5/3559 , H04N5/3592 , H04N5/37452 , H04N5/37457
Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.
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公开(公告)号：US20150015757A1
公开(公告)日：2015-01-15
申请号：US13940710
申请日：2013-07-12
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Trygve Willassen
CPC classification number: H04N5/378 , H04N5/3559 , H04N5/374 , H04N5/3745
Abstract: An image sensor includes a pixel array including a plurality of pixel cells each including a floating diffusion node, a photosensitive element coupled to selectively transfer image charge to the floating diffusion node, and a feedback coupling capacitor coupled between the floating diffusion node and an output line. A bit line is coupled to selectively readout image data output from each one of a group of the plurality of pixel cells. An integrator is capacitively coupled to the bit line. The integrator is coupled to output an output signal on the output line in response to the image data. The output signal on the output line is capacitively coupled to the floating diffusion node through the feedback coupling capacitor to suppress a potential swing at the floating diffusion node of each one of the group of the plurality of pixel cells in response to the output signal.
Abstract translation: 图像传感器包括像素阵列，其包括多个像素单元，每个像素单元包括浮动扩散节点，耦合以选择性地将图像电荷传送到浮动扩散节点的感光元件以及耦合在浮动扩散节点和输出线之间的反馈耦合电容器 。 位线被耦合以选择性地读出从多个像素单元的组中的每一个输出的图像数据。 积分器电容耦合到位线。 积分器被耦合以响应于图像数据在输出线上输出输出信号。 输出线上的输出信号通过反馈耦合电容电容耦合到浮动扩散节点，以便响应输出信号抑制多个像素单元组中的每一个的浮动扩散节点的电位摆动。
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公开(公告)号：US11181419B2
公开(公告)日：2021-11-23
申请号：US16155616
申请日：2018-10-09
Applicant: OmniVision Technologies, Inc.
Inventor： Trygve Willassen , Olivier Bulteel , Trung Nguyen , Robert Johansson
IPC: G01S17/894 , G01J1/46 , G01J1/42 , G01S17/08 , G01S7/4865 , G01S7/4863 , G01J1/44
Abstract: A threshold detection circuit includes a plurality of capacitors. A plurality of switching circuits is coupled to the capacitors such that a first end of each of the capacitors is coupled to a corresponding photon sensor during detection intervals, and the first end of each capacitor is coupled to a variable initialization value during reset intervals. A threshold number of the capacitors are initialized to a first value and the remaining capacitors are initialized to a second value during reset intervals. A comparator is coupled to a second of the capacitors to generate a detection event in response to the threshold number of photon sensors sensing one or more incident photons during detection intervals.
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公开(公告)号：US09936153B1
公开(公告)日：2018-04-03
申请号：US15285352
申请日：2016-10-04
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin
IPC: H04N5/361 , H04N5/374 , H04N5/378 , H01L27/146
CPC classification number: H04N5/361 , H01L27/14636 , H01L27/14656 , H04N5/374 , H04N5/378
Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.
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