公开(公告)号：US10266965B2

公开(公告)日：2019-04-23

申请号：US15123556

申请日：2015-02-26

申请人： OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC.

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masashi Isemura ,  Akira Usui ,  Masatomo Shibata ,  Takehiro Yoshida

IPC分类号： C30B19/02 ,  C30B29/40 ,  C30B25/20 ,  C30B29/38 ,  H01L21/02 ,  B28D5/00 ,  C30B19/06 ,  C30B25/18 ,  C30B33/00 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/30

摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

公开(公告)号：US10309036B2

公开(公告)日：2019-06-04

申请号：US15555004

申请日：2016-02-18

申请人： OSAKA UNIVERSITY ,  SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masatomo Shibata ,  Takehiro Yoshida

IPC分类号： C30B23/02 ,  C30B19/02 ,  C30B25/20 ,  C30B29/40 ,  H01L21/02

摘要： A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm−3 in a crystal near the principal surface over an entire in-plane region thereof.

公开(公告)号：US10260165B2

公开(公告)日：2019-04-16

申请号：US15398319

申请日：2017-01-04

申请人： OSAKA UNIVERSITY ,  SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masayuki Imanishi ,  Masatomo Shibata ,  Takehiro Yoshida

IPC分类号： C30B25/18 ,  C30B19/12 ,  C30B19/02 ,  C30B29/40 ,  H01L21/02

摘要： There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.