中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.015 seconds)

    Optoelectronic Semiconductor Chip
    2.
    发明申请
    Optoelectronic Semiconductor Chip 审中-公开
    光电半导体芯片

    公开(公告)号：US20160260870A1

    公开(公告)日：2016-09-08

    申请号：US15156802

    申请日：2016-05-17

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Markus Maute ,  Karl Engl ,  Sebastian Taeger ,  Robert Walter ,  Johannes Stocker

    IPC: H01L33/46 ,  H01L33/38 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

    Abstract translation: 公开了一种光电半导体芯片。 在一个实施例中，光电子半导体芯片包括半导体材料的半导体本体，p接触层和n接触层。 半导体主体包括用于产生辐射的有源层。 半导体本体包括p侧和n侧，其间布置有源层。 p接触层用于电接触p侧。 n接触层用于电接触n侧1b。 n接触层包含TCO层和镜层，TCO层布置在半导体主体的n侧和镜面层之间。

    Optoelectronic Semiconductor Chip
    6.
    发明申请
    Optoelectronic Semiconductor Chip 有权
    光电半导体芯片

    公开(公告)号：US20140197435A1

    公开(公告)日：2014-07-17

    申请号：US14122134

    申请日：2012-04-26

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Markus Maute ,  Karl Engl ,  Sebastian Taeger ,  Robert Walter ,  Johannes Stocker

    IPC: H01L33/42 ,  H01L33/60

    CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a minor layer, the TCO-layer being arranged between the n-side of the semiconductor body and the minor layer.

    Abstract translation: 光电半导体芯片包括半导体材料的半导体本体，p接触层和n接触层。 半导体主体包括用于产生辐射的有源层。 半导体本体包括p侧和n侧，其间布置有源层。 p接触层用于电接触p侧。 n接触层用于电接触n侧1b。 n接触层包含TCO层和次层，TCO层布置在半导体主体的n侧和次要层之间。

Patent Agency Ranking