公开(公告)号：US10305002B2

公开(公告)日：2019-05-28

申请号：US15121713

申请日：2015-06-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Leirer ,  Markus Maute

IPC: H01L25/16 ,  H01L33/46 ,  H01L33/48 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L29/861

Abstract: A light emitting semiconductor device includes at least one light emitting semiconductor chip having a semiconductor layer sequence, a light outcoupling surface, a rear face on an opposite side of the semiconductor layer sequence from the light outcoupling surface, and side faces which connect the light outcoupling surface and the rear face. The light emitting semiconductor device further includes a carrier body, having a molded body which covers the side faces of the at least one light emitting semiconductor chip directly and in a positively-locking manner. The carrier body comprises, at the light outcoupling surface of the at least one light emitting semiconductor chip, a top face on which a dielectric mirror is disposed. At least part of the light outcoupling surface is uncovered by the dielectric mirror.

公开(公告)号：US09722136B2

公开(公告)日：2017-08-01

申请号：US15098926

申请日：2016-04-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karl Engl ,  Markus Maute ,  Stefanie Rammelsberger ,  Anna Kasprzak-Zablocka

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/52 ,  H01L33/38

CPC classification number: H01L33/0075 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405 ,  H01L33/52 ,  H01L2933/005

Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.

公开(公告)号：US20150372203A1

公开(公告)日：2015-12-24

申请号：US14760454

申请日：2014-01-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johann Eibl ,  Sebastian Taeger ,  Lutz Höppel ,  Karl Engl ,  Stefanie Rammelsberger ,  Markus Maute ,  Michael Huber ,  Rainer Hartmann ,  Georg Hartung

IPC: H01L33/54 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/54 ,  G01B2210/306 ,  H01L21/0228 ,  H01L33/405 ,  H01L33/44 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2933/005 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.

Abstract translation: 光电子半导体芯片包括具有用于产生电磁辐射的有源区的半导体本体，用于反射电磁辐射的第一镜层，用电绝缘材料形成的第一封装层，以及用于机械地支撑第一封装的载体 第一镜层和半导体本体。 第一镜层布置在载体和半导体本体之间。 第一封装层布置在载体和第一反射镜层之间。 第一封装层是ALD层。

公开(公告)号：US10276752B2

公开(公告)日：2019-04-30

申请号：US15745240

申请日：2016-07-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johannes Baur ,  Jürgen Moosburger ,  Lutz Höppel ,  Markus Maute ,  Thomas Schwarz ,  Matthias Sabathil ,  Ralph Wirth ,  Alexander Linkov

IPC: H01L33/36 ,  H01L33/38 ,  H01L33/42 ,  H01L33/58

Abstract: An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.

公开(公告)号：US10224356B2

公开(公告)日：2019-03-05

申请号：US15573414

申请日：2016-05-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Maute

IPC: H01L27/146 ,  H01L33/48 ,  H01L33/62 ,  F21V5/04 ,  H01L25/075 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/56

Abstract: The invention relates to an optoelectronic semiconductor component (100) comprising the following —an optoelectronic semiconductor chip (2), the lateral surfaces (2c) and lower face (2b) of which are at least partly covered by a molded body (3) that is electrically conductive and is designed to electrically contact the optoelectronic semiconductor chip (2), —at least one via (6) which comprises an electrically conductive material and is laterally spaced from the semiconductor chip (2), said via (6) completely passing through the molded body (3), wherein the via (6) extends from an upper face (3a) of the molded body (3) to a lower face (3b) of the molded body (3), —at least one insulating element (9) which is arranged within the molded body (3) between the via (6) and the semiconductor chip (2) and extends from the upper face (3a) of the molded body (3) to the lower face (3b) of the molded body (3), and —an electrically conductive connection (7) which is connected to the semiconductor chip (2) and the via (6) in an electrically conductive manner.

公开(公告)号：US20190006562A1

公开(公告)日：2019-01-03

申请号：US15745240

申请日：2016-07-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johannes Baur ,  Jurgen Moosburger ,  Lutz Hoppel ,  Markus Maute ,  Thomas Schwarz ,  Matthias Sabathil ,  Ralph Wirth ,  Alexander Linkov

IPC: H01L33/42

Abstract: An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.

公开(公告)号：US20150214450A1

公开(公告)日：2015-07-30

申请号：US14682258

申请日：2015-04-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Maute ,  Jürgen Moosburger ,  Simon Jerebic

IPC: H01L33/60 ,  H01L33/56

CPC classification number: H01L33/60 ,  H01L33/20 ,  H01L33/44 ,  H01L33/48 ,  H01L33/486 ,  H01L33/501 ,  H01L33/56 ,  H01L2933/0091

Abstract: An optoelectronic component includes a carrier; a semiconductor chip having an active layer that generates radiation and is arranged on a carrier; a dispersed material including a matrix material and particles embedded therein arranged on the semiconductor chip and/or the carrier at least in regions, and is integral therewith; and a separating edge between the dispersed material and matrix material formed at a chip edge of the semiconductor chip.

Abstract translation: 光电子部件包括载体; 半导体芯片，具有产生辐射并且被布置在载体上的有源层; 包括基质材料和嵌入其中的颗粒的分散材料，其至少在区域中布置在半导体芯片和/或载体上，并与其成为一体; 以及形成在半导体芯片的芯片边缘处的分散材料和基质材料之间的分离边缘。

公开(公告)号：US10381391B2

公开(公告)日：2019-08-13

申请号：US15573414

申请日：2016-05-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Maute

IPC: H01L27/146 ,  H01L33/48 ,  H01L33/62 ,  H01L33/40 ,  H01L33/38 ,  H01L33/22 ,  H01L25/075 ,  F21V5/04 ,  H01L33/46 ,  H01L33/56

Abstract: The invention relates to an optoelectronic semiconductor component (100) comprising the following —an optoelectronic semiconductor chip (2), the lateral surfaces (2c) and lower face (2b) of which are at least partly covered by a molded body (3) that is electrically conductive and is designed to electrically contact the optoelectronic semiconductor chip (2), —at least one via (6) which comprises an electrically conductive material and is laterally spaced from the semiconductor chip (2), said via (6) completely passing through the molded body (3), wherein the via (6) extends from an upper face (3a) of the molded body (3) to a lower face (3b) of the molded body (3), —at least one insulating element (9) which is arranged within the molded body (3) between the via (6) and the semiconductor chip (2) and extends from the upper face (3a) of the molded body (3) to the lower face (3b) of the molded body (3), and —an electrically conductive connection (7) which is connected to the semiconductor chip (2) and the via (6) in an electrically conductive manner.

公开(公告)号：US10164143B2

公开(公告)日：2018-12-25

申请号：US15661614

申请日：2017-07-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karl Engl ,  Markus Maute ,  Stefanie Rammelsberger ,  Anna Kasprzak-Zablocka

IPC: H01L33/36 ,  H01L33/00 ,  H01L33/40 ,  H01L33/52 ,  H01L33/38

Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.

公开(公告)号：US10115867B2

公开(公告)日：2018-10-30

申请号：US15650677

申请日：2017-07-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Maute ,  Karl Engl ,  Sebastian Taeger ,  Robert Walter ,  Johannes Stocker

IPC: H01L29/49 ,  H01L33/46 ,  H01L33/32 ,  H01L33/06 ,  H01L33/42 ,  H01L33/38 ,  H01L33/60 ,  H01L33/20 ,  H01L33/40

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.