公开(公告)号：US20150353823A1

公开(公告)日：2015-12-10

申请号：US14829118

申请日：2015-08-18

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Madis RAUKAS ,  Krister Bergenek ,  George C. Wei ,  Nathan M. Zink ,  Stefan Lange

IPC: C09K11/77 ,  G02B5/20 ,  G02B1/00

CPC classification number: C09K11/7774 ,  C04B35/44 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/5436 ,  C04B2235/6582 ,  C04B2235/764 ,  C04B2235/77 ,  C04B2235/9646 ,  G02B1/00 ,  G02B5/20 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A radiation-emitting component comprising a ceramic material, comprising a garnet having the composition represented by the formula A3-xB5O12:Dx and a barium-containing oxide. In the garnet A3-xB5O12:Dx, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0≦x≦2.

Abstract translation: 一种包含陶瓷材料的辐射发射组件，包括具有由式A3-xB5O12：Dx表示的组成的石榴石和含钡氧化物。 在石榴石A3-xB5O12：Dx中，A选自镥，钇，钆，铽，钪，另一稀土金属或其混合物。 B选自铝，钪，镓，铟，硼或其混合物。 D是选自铬，锰和稀土金属，特别是铈，镨或钆中的至少一种掺杂剂。 存在掺杂剂，其中x为0＆nlE; x＆nlE; 2。

公开(公告)号：US10240086B2

公开(公告)日：2019-03-26

申请号：US14829118

申请日：2015-08-18

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Madis Raukas ,  Krister Bergenek ,  George C. Wei ,  Nathan M. Zink ,  Stefan Lange

IPC: C09K11/77 ,  G02B1/00 ,  G02B5/20 ,  C04B35/44

Abstract: A radiation-emitting component comprising a ceramic material, comprising a garnet having the composition represented by the formula A3-xB5O12:Dx and a barium-containing oxide. In the garnet A3-xB5O12:Dx, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0≤x≤2.

公开(公告)号：US11201141B2

公开(公告)日：2021-12-14

申请号：US16317536

申请日：2017-09-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sergey Kudaev ,  Krister Bergenek

IPC: H01L25/075 ,  H01L33/46 ,  H01L33/48 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  F21K9/232 ,  H01L33/58 ,  H01L33/32 ,  H01L33/36

Abstract: A light emitting device is disclosed. In an embodiment a light-emitting device includes a plurality of light-emitting diode chips arranged on a mounting surface of a carrier, a first translucent element and a second translucent element, wherein the first translucent element is arranged over the plurality of light-emitting diode chips as viewed from the mounting surface and the second translucent element is disposed on a side of the plurality of light-emitting diode chips opposite the first translucent element such that the light-emitting diode chips are arranged between the first and second translucent elements, wherein the first and second translucent elements are configured to emit light generated by the light-emitting diode chips during operation outwardly, and wherein the first and second translucent elements appear white or grey in daylight.

公开(公告)号：US10411170B2

公开(公告)日：2019-09-10

申请号：US15570699

申请日：2016-04-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sonja Tragl ,  Dominik Eisert ,  Stefan Lange ,  Nils Kaufmann ,  Alexander Martin ,  Krister Bergenek

IPC: H01L33/50 ,  C09K11/77 ,  A61B1/06 ,  H01L33/48 ,  H01L33/58 ,  H01L33/62

Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

公开(公告)号：US20180358514A1

公开(公告)日：2018-12-13

申请号：US15570699

申请日：2016-04-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sonja Tragl ,  Dominik Eisert ,  Stefan Lange ,  Nils Kaufmann ,  Alexander Martin ,  Krister Bergenek

IPC: H01L33/50 ,  A61B1/06

CPC classification number: H01L33/502 ,  A61B1/0653 ,  A61B1/0661 ,  C09K11/77 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.