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1.发明申请公开(公告)号：US20200052153A1
公开(公告)日：2020-02-13
申请号：US16660449
申请日：2019-10-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alvaro GOMEZ-IGLESIAS , Asako HIRAI
Abstract: The invention relates to an optoelectronic semiconductor element (100) comprising a semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type, and an active layer (11) which is arranged between the first layer (10) and the second layer (12) and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element (100) is equipped with a plurality of injection regions (2) which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence (1) is doped within each injection region (2) such that the semiconductor layer sequence (1) has the same conductivity type as the first layer (10) within the entire injection region (2). Each injection region (2) passes at least partly through the active layer (11) starting from the first layer (10). Furthermore, each injection region (2) is laterally surrounded by a continuous path of the active layer (11), the active layer (11) being doped less in the path than in the injection region (2) or oppositely thereto. During the operation of the semiconductor element (100), charge carriers reach the injection regions (2) at least partly from the first layer (10) and are directly injected into the active layer (11) from there.
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公开(公告)号：US20160079468A1
公开(公告)日：2016-03-17
申请号：US14857698
申请日：2015-09-17
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Alvaro GOMEZ-IGLESIAS , Marika HIRMER , Alexander FREY , Lorenzo ZINI , Harald LAUX
CPC classification number: H01L33/0079 , H01L33/02 , H01L33/10 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32
Abstract: The method is designed for producing optoelectronic semiconductor chips and comprises the steps: A) providing a carrier substrate (1), B) applying a semiconductor layer sequence (2) onto the carrier substrate (1), and C) detaching the finished semiconductor layer sequence (2) from the carrier substrate (1) by means of laser radiation (R) with a wavelength (L) through the carrier substrate (1), wherein the semiconductor layer sequence (2) has a buffer layer stack (20) and a functional stack with an active layer (21) for generating light (22), the absorber layer (23) is grown within the buffer layer stack (20) from a material for absorbing the laser radiation (R) and all the remaining layers (24 and 25) of the buffer layer stack (20) are transmissive to the laser radiation (R), a material of the functional stack (22) preferably has an absorbent action for the laser radiation (R), and in step C) the semiconductor layer sequence (2) is detached in the region of the absorber layer (23).
Abstract translation: 该方法设计用于制造光电子半导体芯片，包括以下步骤：A）提供载体衬底（1），B）将半导体层序列（2）施加到载体衬底（1）上，以及C）将完成的半导体层 通过穿过载体衬底（1）的具有波长（L）的激光辐射（R）从载体衬底（1）获得序列（2），其中半导体层序列（2）具有缓冲层堆叠（20）和 具有用于产生光（22）的有源层（21）的功能堆叠，所述吸收层（23）从用于吸收激光辐射（R）和所有剩余层（R）的材料生长在缓冲层堆叠（20）内 缓冲层堆叠（20）的光纤（24和25）对于激光辐射（R）是透射的，功能堆叠（22）的材料优选地具有用于激光辐射（R）的吸收作用，并且在步骤C） 半导体层序列（2）在吸收层（23）的区域中被分离。
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3.发明申请公开(公告)号：US20180062029A1
公开(公告)日：2018-03-01
申请号：US15561509
申请日：2016-03-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alvaro GOMEZ-IGLESIAS , Asako HIRAI
CPC classification number: H01L33/025 , H01L33/007 , H01L33/0095 , H01L33/06 , H01L33/14 , H01L33/32 , H01S5/0424 , H01S5/34333
Abstract: The invention relates to an optoelectronic semiconductor element (100) comprising a semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type, and an active layer (11) which is arranged between the first layer (10) and the second layer (12) and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element (100) is equipped with a plurality of injection regions (2) which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence (1) is doped within each injection region (2) such that the semiconductor layer sequence (1) has the same conductivity type as the first layer (10) within the entire injection region (2). Each injection region (2) passes at least partly through the active layer (11) starting from the first layer (10). Furthermore, each injection region (2) is laterally surrounded by a continuous path of the active layer (11), the active layer (11) being doped less in the path than in the injection region (2) or oppositely thereto. During the operation of the semiconductor element (100), charge carriers reach the injection regions (2) at least partly from the first layer (10) and are directly injected into the active layer (11) from there.
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