公开(公告)号：US20160079468A1

公开(公告)日：2016-03-17

申请号：US14857698

申请日：2015-09-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Alvaro GOMEZ-IGLESIAS ,  Marika HIRMER ,  Alexander FREY ,  Lorenzo ZINI ,  Harald LAUX

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/12 ,  H01L33/06 ,  H01L33/10

CPC classification number: H01L33/0079 ,  H01L33/02 ,  H01L33/10 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32

Abstract: The method is designed for producing optoelectronic semiconductor chips and comprises the steps: A) providing a carrier substrate (1), B) applying a semiconductor layer sequence (2) onto the carrier substrate (1), and C) detaching the finished semiconductor layer sequence (2) from the carrier substrate (1) by means of laser radiation (R) with a wavelength (L) through the carrier substrate (1), wherein the semiconductor layer sequence (2) has a buffer layer stack (20) and a functional stack with an active layer (21) for generating light (22), the absorber layer (23) is grown within the buffer layer stack (20) from a material for absorbing the laser radiation (R) and all the remaining layers (24 and 25) of the buffer layer stack (20) are transmissive to the laser radiation (R), a material of the functional stack (22) preferably has an absorbent action for the laser radiation (R), and in step C) the semiconductor layer sequence (2) is detached in the region of the absorber layer (23).

Abstract translation: 该方法设计用于制造光电子半导体芯片，包括以下步骤：A）提供载体衬底（1），B）将半导体层序列（2）施加到载体衬底（1）上，以及C）将完成的半导体层 通过穿过载体衬底（1）的具有波长（L）的激光辐射（R）从载体衬底（1）获得序列（2），其中半导体层序列（2）具有缓冲层堆叠（20）和 具有用于产生光（22）的有源层（21）的功能堆叠，所述吸收层（23）从用于吸收激光辐射（R）和所有剩余层（R）的材料生长在缓冲层堆叠（20）内 缓冲层堆叠（20）的光纤（24和25）对于激光辐射（R）是透射的，功能堆叠（22）的材料优选地具有用于激光辐射（R）的吸收作用，并且在步骤C） 半导体层序列（2）在吸收层（23）的区域中被分离。

公开(公告)号：US20160300829A1

公开(公告)日：2016-10-13

申请号：US15038034

申请日：2014-11-07

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Christian LEIRER ,  Berthold HAHN ,  Karl ENGL ,  Johannes BAUR ,  Siegfried HERRMANN ,  Andreas PLOESSL ,  Simeon KATZ ,  Tobias MEYER ,  Lorenzo ZINI ,  Markus MAUTE

IPC: H01L27/02 ,  H01L33/38 ,  H01L33/62 ,  H01L33/32

CPC classification number: H01L27/0248 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/15 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.

Abstract translation: 描述了具有用于过压保护的内置桥接元件（9,9A）的光电子半导体芯片（1）。

公开(公告)号：US20170133555A1

公开(公告)日：2017-05-11

申请号：US15413281

申请日：2017-01-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lorenzo ZINI ,  Bernd BOEHM

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/32 ,  H01L25/075

CPC classification number: H01L33/24 ,  H01L25/167 ,  H01L33/0095 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a method for separating regions of a semiconductor layer and for introducing an outcoupling structure into an upper side of the semiconductor layer, the outcoupling structure being provided to couple light out of the semiconductor layer. The upper side of the semiconductor layer is covered by a mask having first openings for introducing the outcoupling structure and at least a second opening, which is provided to introduce a separating trench into the semiconductor layer. With the aid of an etching method, the outcoupling structure is introduced into the upper side of the semiconductor layer in the region of the first openings and simultaneously a separating trench passing through the semiconductor layer is introduced into the semiconductor layer via the second opening, and a region of the semiconductor layer is separated.