公开(公告)号：US20160300983A1

公开(公告)日：2016-10-13

申请号：US15038562

申请日：2014-12-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin STRASSBURG ,  Martin MANDL ,  Tilman SCHIMPKE ,  Ion STOLL ,  Barbara HUCKENBECK ,  Franz ZWASCHKA ,  Daniel BICHLER

IPC: H01L33/50 ,  H01L33/56 ,  H01L33/32

CPC classification number: H01L33/502 ,  H01L27/156 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0091

Abstract: An optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a plurality of active regions configured to generate a primary radiation and a plurality of luminescent material particles configured to convert the primary radiation into a secondary radiation, wherein the active regions are arranged spaced apart from each other, wherein each active region has a main extension direction, wherein each active region has a core region comprising a first semiconductor material, wherein each active region has an active layer covering the core region, wherein each active region has a cover layer comprising a second semiconductor material and covering the active layer, wherein at least some of the luminescent material particles are arranged between the active regions, and wherein a diameter of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions.

Abstract translation: 公开了一种光电子半导体元件及其制造方法。 在一个实施例中，所述部件包括被配置为产生主辐射的多个有源区域和被配置为将主辐射转换成次辐射的多个发光材料颗粒，其中所述有源区域彼此间隔布置，其中每个 有源区具有主延伸方向，其中每个有源区具有包括第一半导体材料的芯区，其中每个有源区具有覆盖芯区的有源层，其中每个有源区具有包括第二半导体材料和覆盖层的覆盖层 所述活性层，其中所述发光材料颗粒中的至少一些布置在所述有源区之间，并且其中所述发光材料颗粒的大部分的直径小于两个相邻活性区之间的距离。

公开(公告)号：US20170358719A1

公开(公告)日：2017-12-14

申请号：US15533006

申请日：2015-12-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik SCHOLZ ,  Martin MANDL ,  Ion STOLL ,  Martin STRASSBURG ,  Barbara HUCKENBECK

IPC: H01L33/50 ,  H01L33/16 ,  H01L33/24 ,  H01L33/08

CPC classification number: H01L33/505 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  H01L33/508 ,  H01L2933/0041

Abstract: In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor columns (2) have a respective core (21) made of a semiconductor material of a first conductivity type, and a core shell (23) surrounding the core (21) made of a semiconductor material of a second conductivity type. There is an active zone (22) between the core (21) and the core shell (23) for generating a primary radiation by means of electroluminescence. A respective conversion shell (4) is placed onto the semiconductor columns (2), which conversion shell at least partially interlockingly surrounds the corresponding core shell (23), and which at least partially absorbs the primary radiation and converts same into a secondary radiation of a longer wavelength by means of photoluminescence. The conversion shells (4) which are applied to adjacent semiconductor columns (2), only incompletely fill an intermediate space between the semiconductor columns (2).