公开(公告)号：US20160300983A1

公开(公告)日：2016-10-13

申请号：US15038562

申请日：2014-12-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin STRASSBURG ,  Martin MANDL ,  Tilman SCHIMPKE ,  Ion STOLL ,  Barbara HUCKENBECK ,  Franz ZWASCHKA ,  Daniel BICHLER

IPC: H01L33/50 ,  H01L33/56 ,  H01L33/32

CPC classification number: H01L33/502 ,  H01L27/156 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0091

Abstract: An optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a plurality of active regions configured to generate a primary radiation and a plurality of luminescent material particles configured to convert the primary radiation into a secondary radiation, wherein the active regions are arranged spaced apart from each other, wherein each active region has a main extension direction, wherein each active region has a core region comprising a first semiconductor material, wherein each active region has an active layer covering the core region, wherein each active region has a cover layer comprising a second semiconductor material and covering the active layer, wherein at least some of the luminescent material particles are arranged between the active regions, and wherein a diameter of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions.

Abstract translation: 公开了一种光电子半导体元件及其制造方法。 在一个实施例中，所述部件包括被配置为产生主辐射的多个有源区域和被配置为将主辐射转换成次辐射的多个发光材料颗粒，其中所述有源区域彼此间隔布置，其中每个 有源区具有主延伸方向，其中每个有源区具有包括第一半导体材料的芯区，其中每个有源区具有覆盖芯区的有源层，其中每个有源区具有包括第二半导体材料和覆盖层的覆盖层 所述活性层，其中所述发光材料颗粒中的至少一些布置在所述有源区之间，并且其中所述发光材料颗粒的大部分的直径小于两个相邻活性区之间的距离。

公开(公告)号：US20170365751A1

公开(公告)日：2017-12-21

申请号：US15532486

申请日：2015-12-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Rainer BUTENDEICH ,  Ion STOLL ,  Martin MANDL ,  Martin STRASSBURG

IPC: H01L33/50 ,  H01L33/08

CPC classification number: H01L33/505 ,  H01L33/08 ,  H01L33/18 ,  H01L33/50 ,  H01L33/504

Abstract: The invention relates to an optoelectronic element comprising a semiconductor chip (12) that emits a blue-green light (4) during operation and has at least one light passage surface (12a) through which the blue-green light (4) emitted during operation passes and comprising a conversion element (3) which comprises fluorescent particles (31), in particular fluorescent particles of only one type, and which is arranged on the light passage surface (12a) at least in some areas. The fluorescent particles (31) at least partly convert the blue-green light (4) into a red light (5), and the optoelectronic element emits a white mixed light (6) which contains non-converted components of the blue-green light (4) and components of the red light (5).

公开(公告)号：US20170358719A1

公开(公告)日：2017-12-14

申请号：US15533006

申请日：2015-12-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik SCHOLZ ,  Martin MANDL ,  Ion STOLL ,  Martin STRASSBURG ,  Barbara HUCKENBECK

IPC: H01L33/50 ,  H01L33/16 ,  H01L33/24 ,  H01L33/08

CPC classification number: H01L33/505 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  H01L33/508 ,  H01L2933/0041

Abstract: In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor columns (2) have a respective core (21) made of a semiconductor material of a first conductivity type, and a core shell (23) surrounding the core (21) made of a semiconductor material of a second conductivity type. There is an active zone (22) between the core (21) and the core shell (23) for generating a primary radiation by means of electroluminescence. A respective conversion shell (4) is placed onto the semiconductor columns (2), which conversion shell at least partially interlockingly surrounds the corresponding core shell (23), and which at least partially absorbs the primary radiation and converts same into a secondary radiation of a longer wavelength by means of photoluminescence. The conversion shells (4) which are applied to adjacent semiconductor columns (2), only incompletely fill an intermediate space between the semiconductor columns (2).

公开(公告)号：US20160111594A1

公开(公告)日：2016-04-21

申请号：US14889316

申请日：2014-05-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Peter NAGEL ,  Stefan ILLEK ,  Martin STRASSBURG

IPC: H01L33/10 ,  H01L33/06 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/10 ,  H01L33/005 ,  H01L33/04 ,  H01L33/06 ,  H01L33/08

Abstract: An optoelectronic device (10, 1010) having a semiconductor layer structure (100, 1100) comprising a first light-active layer (140) and a second light-active layer (240). A first tunnel junction (200) is formed between the first light-active layer (140) and the second light-active layer (240). A first Bragg reflector (160) is formed between the first light-active layer (140) and the first tunnel junction (200). A second Bragg reflector (260) is formed between the second light-active layer (240) and the first tunnel junction (200).

Abstract translation: 具有包括第一光活性层（140）和第二光活性层（240）的半导体层结构（100,1100）的光电子器件（10,1010）。 在第一光活性层（140）和第二光活性层（240）之间形成第一隧道结（200）。 第一布拉格反射器（160）形成在第一光活性层（140）和第一隧道结（200）之间。 第二布拉格反射器（260）形成在第二光活性层（240）和第一隧道结（200）之间。