公开(公告)号：US20160300983A1

公开(公告)日：2016-10-13

申请号：US15038562

申请日：2014-12-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin STRASSBURG ,  Martin MANDL ,  Tilman SCHIMPKE ,  Ion STOLL ,  Barbara HUCKENBECK ,  Franz ZWASCHKA ,  Daniel BICHLER

IPC: H01L33/50 ,  H01L33/56 ,  H01L33/32

CPC classification number: H01L33/502 ,  H01L27/156 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0091

Abstract: An optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a plurality of active regions configured to generate a primary radiation and a plurality of luminescent material particles configured to convert the primary radiation into a secondary radiation, wherein the active regions are arranged spaced apart from each other, wherein each active region has a main extension direction, wherein each active region has a core region comprising a first semiconductor material, wherein each active region has an active layer covering the core region, wherein each active region has a cover layer comprising a second semiconductor material and covering the active layer, wherein at least some of the luminescent material particles are arranged between the active regions, and wherein a diameter of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions.

Abstract translation: 公开了一种光电子半导体元件及其制造方法。 在一个实施例中，所述部件包括被配置为产生主辐射的多个有源区域和被配置为将主辐射转换成次辐射的多个发光材料颗粒，其中所述有源区域彼此间隔布置，其中每个 有源区具有主延伸方向，其中每个有源区具有包括第一半导体材料的芯区，其中每个有源区具有覆盖芯区的有源层，其中每个有源区具有包括第二半导体材料和覆盖层的覆盖层 所述活性层，其中所述发光材料颗粒中的至少一些布置在所述有源区之间，并且其中所述发光材料颗粒的大部分的直径小于两个相邻活性区之间的距离。

公开(公告)号：US20180090540A1

公开(公告)日：2018-03-29

申请号：US15823431

申请日：2017-11-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Norwin VON MALM ,  Martin MANDL ,  Alexander F. PFEUFFER ,  Britta GOEOETZ

IPC: H01L27/15 ,  H01L29/66 ,  H01L29/78 ,  H01L33/00 ,  H01L33/12 ,  H01L25/075 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L29/66568 ,  H01L29/78 ,  H01L33/007 ,  H01L33/12 ,  H01L33/507 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0091 ,  H01L2924/00

Abstract: In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •A) providing a growth substrate (2); •B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •C) producing a plurality of separate growth points (45) on or at the buffer layer (4); •D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 μm inclusive; and •E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

公开(公告)号：US20180019373A1

公开(公告)日：2018-01-18

申请号：US15550008

申请日：2016-01-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas LEHNHARDT ,  Martin MANDL

IPC: H01L33/08 ,  H01L33/24 ,  H01L27/15 ,  H01L33/14 ,  H01L33/50 ,  H01L33/38

CPC classification number: H01L33/08 ,  H01L27/153 ,  H01L33/14 ,  H01L33/24 ,  H01L33/38 ,  H01L33/50

Abstract: An optoelectronic semiconductor component is specified, comprising a multiplicity of radiation generating elements (14) arranged at a distance from one another on a surface (22) of a carrier element (20), wherein each of the radiation generating elements has a diameter of less than 10 μm in a direction perpendicular to the surface of the carrier element and adheres to the surface of the carrier element in the region of a respective connection location (26), and wherein the optoelectronic semiconductor component is free of a growth substrate (2).

公开(公告)号：US20170365751A1

公开(公告)日：2017-12-21

申请号：US15532486

申请日：2015-12-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Rainer BUTENDEICH ,  Ion STOLL ,  Martin MANDL ,  Martin STRASSBURG

IPC: H01L33/50 ,  H01L33/08

CPC classification number: H01L33/505 ,  H01L33/08 ,  H01L33/18 ,  H01L33/50 ,  H01L33/504

Abstract: The invention relates to an optoelectronic element comprising a semiconductor chip (12) that emits a blue-green light (4) during operation and has at least one light passage surface (12a) through which the blue-green light (4) emitted during operation passes and comprising a conversion element (3) which comprises fluorescent particles (31), in particular fluorescent particles of only one type, and which is arranged on the light passage surface (12a) at least in some areas. The fluorescent particles (31) at least partly convert the blue-green light (4) into a red light (5), and the optoelectronic element emits a white mixed light (6) which contains non-converted components of the blue-green light (4) and components of the red light (5).

公开(公告)号：US20170358719A1

公开(公告)日：2017-12-14

申请号：US15533006

申请日：2015-12-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik SCHOLZ ,  Martin MANDL ,  Ion STOLL ,  Martin STRASSBURG ,  Barbara HUCKENBECK

IPC: H01L33/50 ,  H01L33/16 ,  H01L33/24 ,  H01L33/08

CPC classification number: H01L33/505 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  H01L33/508 ,  H01L2933/0041

Abstract: In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor columns (2) have a respective core (21) made of a semiconductor material of a first conductivity type, and a core shell (23) surrounding the core (21) made of a semiconductor material of a second conductivity type. There is an active zone (22) between the core (21) and the core shell (23) for generating a primary radiation by means of electroluminescence. A respective conversion shell (4) is placed onto the semiconductor columns (2), which conversion shell at least partially interlockingly surrounds the corresponding core shell (23), and which at least partially absorbs the primary radiation and converts same into a secondary radiation of a longer wavelength by means of photoluminescence. The conversion shells (4) which are applied to adjacent semiconductor columns (2), only incompletely fill an intermediate space between the semiconductor columns (2).

公开(公告)号：US20170092719A1

公开(公告)日：2017-03-30

申请号：US15312169

申请日：2015-05-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin MANDL ,  Tilman SCHIMPKE

IPC: H01L29/06 ,  H01L29/20 ,  H01L21/308 ,  H01L21/304

CPC classification number: H01L29/0657 ,  H01L21/304 ,  H01L21/3083 ,  H01L29/20 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/18 ,  H01L33/22 ,  H01L33/24 ,  H01L2933/0016

Abstract: The invention relates to a method for laterally structuring a structured layer (2) with a plurality of three-dimensional structure elements (20), having the following steps: a) providing the structured layer with the three-dimensional structure elements; b) forming a laterally structured covering layer (3) on the structured layer in order to define at least one structured layer region (4) to be removed; and c) removing the structured layer region to be removed by means of a force acting on the structure elements in the region to be removed. The invention further relates to a semiconductor component (1).