公开(公告)号：US09484490B2

公开(公告)日：2016-11-01

申请号：US14397175

申请日：2013-04-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joachim Hertkorn ,  Alexander Frey ,  Christian Schmid

IPC: H01L33/00 ,  H01L21/02 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/32

CPC classification number: H01L33/0066 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/03044 ,  H01L31/1852 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/32 ,  Y10T428/24355

Abstract: An epitaxy substrate (11, 12, 13) for a nitride compound semiconductor material is specified, which has a nucleation layer (2) directly on a substrate (1) wherein the nucleation layer (2) has at least one first layer (21) composed of AlON with a column structure. A method for producing an epitaxy substrate and an optoelectronic semiconductor chip comprising an epitaxy substrate are furthermore specified.

Abstract translation: 规定了用于氮化物化合物半导体材料的外延衬底（11,12,13），其具有直接在基底（1）上的成核层（2），其中成核层（2）具有至少一个第一层（21） 由具有柱结构的AlON组成。 进一步规定了外延基板的制造方法和包含外延基板的光电子半导体芯片。

公开(公告)号：US20150076507A1

公开(公告)日：2015-03-19

申请号：US14397175

申请日：2013-04-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joachim Hertkorn ,  Alexander Frey ,  Christian Schmid

IPC: H01L33/00 ,  H01L31/18 ,  H01L31/0304 ,  H01L33/32

CPC classification number: H01L33/0066 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/03044 ,  H01L31/1852 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/32 ,  Y10T428/24355

Abstract: An epitaxy substrate (11, 12, 13) for a nitride compound semiconductor material is specified, which has a nucleation layer (2) directly on a substrate (1) wherein the nucleation layer (2) has at least one first layer (21) composed of AlON with a column structure. A method for producing an epitaxy substrate and an optoelectronic semiconductor chip comprising an epitaxy substrate are furthermore specified.

Abstract translation: 规定了用于氮化物化合物半导体材料的外延衬底（11,12,13），其具有直接在基底（1）上的成核层（2），其中成核层（2）具有至少一个第一层（21） 由具有柱结构的AlON组成。 进一步规定了外延基板的制造方法和包含外延基板的光电子半导体芯片。

公开(公告)号：US08816373B2

公开(公告)日：2014-08-26

申请号：US13632846

申请日：2012-10-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Kai Gehrke ,  Korbinian Perzlmaier ,  Richard Floeter ,  Christian Schmid

IPC: H01L33/46

CPC classification number: H01L33/60 ,  H01L33/405

Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence for generating an electromagnetic radiation, and also a silver mirror. The silver mirror is arranged at the semiconductor layer sequence. Oxygen is admixed with the silver of the silver mirror. A proportion by weight of the oxygen in the silver mirror is preferably at least 10−5 and furthermore preferably at most 10%.

Abstract translation: 在至少一个实施例中，光电半导体芯片包括用于产生电磁辐射的半导体层序列，以及银镜。 银镜配置在半导体层序列。 氧气与银色镜子的银混合。 银镜中氧的比例优选为10-5以上，进一步优选为10％以下。

公开(公告)号：US09799801B2

公开(公告)日：2017-10-24

申请号：US14891658

申请日：2014-05-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Schmid ,  Julia Grosser ,  Richard Floeter ,  Markus Broell

IPC: G02B6/42 ,  H01L33/44 ,  H01L33/00 ,  H01L33/24

CPC classification number: H01L33/44 ,  H01L33/0079 ,  H01L33/24 ,  H01L2933/0025 ,  H01L2933/0033

Abstract: A method for producing an optoelectronic semiconductor chip comprises the following steps: providing a substrate, depositing a sacrificial layer, depositing a functional semiconductor layer sequence, laterally patterning the functional semiconductor layer sequence, and oxidizing the sacrificial layer in a wet thermal oxidation process.