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公开(公告)号：US20220285430A1
公开(公告)日：2022-09-08
申请号：US17733892
申请日：2022-04-29
发明人： Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Erwin LANG , Tobias MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Julia STOLZ , Tansen VARGHESE , Sebastian WITTMANN , Siegfried HERRMANN , Berthold HAHN , Bruno JENTZSCH , Korbinian PERZLMAIER , Peter STAUSS , Petrus SUNDGREN , Jens MUELLER , Kerstin NEVELING , Frank SINGER , Christian MUELLER
摘要： The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US20220123046A1
公开(公告)日：2022-04-21
申请号：US17515338
申请日：2021-10-29
发明人： Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Erwin LANG , Tobias MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Julia STOLZ , Tansen VARGHESE , Sebastian WITTMANN , Siegfried HERRMANN , Berthold HAHN , Bruno JENTZSCH , Korbinian PERZLMAIER , Peter STAUSS , Petrus SUNDGREN , Jens MUELLER , Kerstin NEVELING , Frank SINGER , Christian MUELLER
摘要： The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US20220375991A1
公开(公告)日：2022-11-24
申请号：US17815866
申请日：2022-07-28
发明人： Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Erwin LANG , Toblas MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Julia STOLZ , Tansen VARGHESE , Sebastian WITTMANN , Siegfried HERRMANN , Berthold HAHN , Bruno JENTZSCH , Korbinian PERZLMAIER , Peter STAUSS , Petrus SUNDGREN , Jens MUELLER , Kerstin NEVELING , Frank SINGER , Christian MUELLER
摘要： The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US20220262852A1
公开(公告)日：2022-08-18
申请号：US17734035
申请日：2022-04-30
发明人： Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Erwin LANG , Tobias MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Julia STOLZ , Tansen VARGHESE , Sebastian WITTMANN , Siegfried HERRMANN , Berthold HAHN , Bruno JENTZSCH , Korbinian PERZLMAIER , Peter STAUSS , Petrus SUNDGREN , Jens MUELLER , Kerstin NEVELING , Frank SINGER , Christian MUELLER
摘要： The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US20220262851A1
公开(公告)日：2022-08-18
申请号：US17734034
申请日：2022-04-30
发明人： Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Erwin LANG , Tobias MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Julia STOLZ , Tansen VARGHESE , Sebastian WITTMANN , Siegfried HERRMANN , Berthold HAHN , Bruno JENTZSCH , Korbinian PERZLMAIER , Peter STAUSS , Petrus SUNDGREN , Jens MUELLER , Kerstin NEVELING , Frank SINGER , Christian MUELLER
摘要： The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US20220102583A1
公开(公告)日：2022-03-31
申请号：US17426456
申请日：2020-01-29
发明人： Thorsten BAUMHEINRICH , Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Michael BRANDL , Peter BRICK , Jean-Jacques DROLET , Hubert HALBRITTER , Laura KREINER , Erwin LANG , Andreas LEBER , Tobias MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Jens RICHTER , Thomas SCHWARZ , Paul TA , Tansen VARGHESE , Xue WANG , Sebastian WITTMANN , Julia STOLZ , Karsten DIEKMANN , Karl ENGL , Siegfried HERRMANN , Berthold HAHN , Stefan ILLEK , Bruno JENTZSCH , Korbinian PERZLMAIER , Ines PIETZONKA , Andreas RAUSCH , Kilian REGAU , Tilman RUEGHEIMER , Simon SCHWALENBERG , Christopher SOELL , Peter STAUSS , Petrus SUNDGREN , Hoa VU , Christopher WIESMANN , Georg BOGNER , Patrick HOERNER , Christoph KLEMP , Jens MUELLER , Kerstin NEVELING , Jong PARK , Christine RAFAEL , Frank SINGER , Kanishk CHAND , Felix FEIX , Christian MUELLER , Eva-Maria RUMMEL , Nicole HEITZER , Marie ASSMANN , Christian BERGER , Ana KANEVCE
IPC分类号： H01L33/38 , H01L27/15 , H01L25/075 , H01L21/683 , H01L33/06 , H01L33/18 , H01L33/30 , H01L33/40 , H01L33/42 , H01L33/50 , G09G3/32
摘要： The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US20220173157A1
公开(公告)日：2022-06-02
申请号：US17515337
申请日：2021-10-29
发明人： Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Erwin LANG , Tobias MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Julia STOLZ , Tansen VARGHESE , Sebastian WITTMANN , Siegfried HERRMANN , Berthold HAHN , Bruno JENTZSCH , Korbinian PERZLMAIER , Peter STAUSS , Petrus SUNDGREN , Jens MUELLER , Kerstin NEVELING , Frank SINGER , Christian MUELLER
摘要： The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US20220069160A1
公开(公告)日：2022-03-03
申请号：US17415003
申请日：2019-12-18
摘要： An optoelectronic semiconductor device comprises an active zone comprising sub-layers for forming a quantum well structure. Differences in energy levels of the quantum well structure are smaller in a central region of the optoelectronic semiconductor device than in an edge region of the optoelectronic semiconductor device. According to further embodiments, an optoelectronic semiconductor device comprises an active zone comprising a sub-layer which is suitable for forming a quantum well structure. In the active zone, quantum dot structures are formed in a central region of the optoelectronic semiconductor device. No quantum dot structures are formed in an edge region of the optoelectronic semiconductor device.
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公开(公告)号：US20220021185A1
公开(公告)日：2022-01-20
申请号：US17297688
申请日：2019-11-29
摘要： An optoelectronic semiconductor component has a first semiconductor layer of a p-conductivity type, a second semiconductor layer of an n-conductivity type and also an n-doped current distribution layer containing ZnSe and adjoining the second semiconductor layer.
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公开(公告)号：US20220271085A1
公开(公告)日：2022-08-25
申请号：US17734036
申请日：2022-04-30
发明人： Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Erwin LANG , Tobias MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Julia STOLZ , Tansen VARGHESE , Sebastian WITTMANN , Siegfried HERRMANN , Berthold HAHN , Bruno JENTZSCH , Korbinian PERZLMAIER , Peter STAUSS , Petrus SUNDGREN , Jens MUELLER , Kerstin NEVELING , Frank SINGER , Christian MUELLER
摘要： The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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