摘要:
The present invention provides a method of preparing ortho-difluorobenzene derivatives, which comprises (a) providing a mixture of cyclohexenes by reacting chlorotrifluoroethylene (CTFE) and 1.3-diene in a flow reactor and distilling the resultant, and (b) dehydrohalogenating the mixture of cyclohexenes with a phase transition catalyst in :he presence of alkali metal hydroxide at temperature range of 40 to 150.degree. C. without using any organic solvent. The distillate having low boiling point, which is obtained during distillation of the resultant, is recycled into the flow reactor. The present invention also provides a method of preparing 2-chloro-4,5-difluorobenzoic acid, which comprises (a) providing a mixture of 4-chloro-1-methyl-4,5,5-trifluorocyclohexene and 5-chloro-1-methyl-4,4,5-trifluorocyclohexene by reacting chlorotrifluoroethylene (CTFE) and isoprene and distilling the resultant. (b) dehydrohalogenating said mixture in the presence of alkali metal hydroxide and a phase transition catalyst to form 3,4-difluorotoluene, to reacting said 3,4-difluorotoluene with chlorine gas without using any organic solvent to form 2-chloro-4,5-difluorotoluene, (d) photo-reacting said 2-chloro-4,5-difluorotoluene with chlorine gas under a lighting mercury lamp without using any organic solvent to form 2-chloro-4,5-difluorobenzotrichloride, and (e) reacting said 2-chloro-4,5-difluorobenzotrichloride with aqueous acid solution without using any organic solvent. The present invention also provides a method of preparing 2-chloro-4,5-difluorobenzoyl chloride by reacting the 2-chloro-4,5-difluorobenzotrichloride of step (e) above with zinc oxide.
摘要:
A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.
摘要:
The present invention relates to a method for detecting target nucleic acids by simultaneous isothermal amplification of the target nucleic acids and a signal probe 5 using an external primer set, a DNA-RNA-DNA hybrid primer set and a DNA-RNA-DNA hybrid signal probe. The method according to the present invention can be used to amplify target nucleic acids in a sample, rapid and exact manner without the risk of contamination compared to the conventional methods such as PCR, and it can simultaneously amplify target nucleic acid and a signal probe, so that it can 0 be applied to various genome projects, detection and identification of a pathogen, detection of gene modification producing a predetermined phenotype, detection of hereditary diseases or determination of sensibility to diseases, and estimation of gene expression. Thus, it is useful for molecular biological studies and disease diagnosis.
摘要:
A microplasma device includes a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel. At least one of the electrodes is encapsulated within the thick metal oxide layer. A method of fabricating a microcavity or microchannel plasma device includes anodizing a flat or gently curved or gently sloped metal substrate to form a thick layer of metal oxide consisting essentially of nanopores that are perpendicular to the surface of the metal substrate. Material removal is conducted to remove metal oxide material to form a microcavity or microchannel in the thick layer of metal oxide.
摘要:
A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.
摘要:
The present invention relates to a method for isothermal amplification of nucleic acids and a method for detecting nucleic acids, which comprises characterized in simultaneous isothermal amplification of nucleic acids and a signal probe to a method for isothermal amplification of target nucleic acids using an external primer set and RNA/DNA hybrid primer set, and a method for detecting amplification products by amplifying nucleic acids and a signal probe simultaneously using an external primer set, RNA-DNA hybrid primer set and DNA-RNA-DNA hybrid probe. The method according to the present invention is convenient compared with the conventional method, it is possible to amplify the target nucleic acids rapidly and exactly without a risk of contamination, and it can simultaneously amplify a signal probe, so that it can be applied to various genome project, such as detection and identification of a pathogen, detection of gene modification causing predetermined phenotype, detection of hereditary diseases or determination of sensibility to diseases, estimation of gene expression and apply to genome project, thus being useful for molecular biological studies and disease diagnosis.
摘要:
A power DMOS transistor having an improved current driving capability and improved reliability is provided. A fabrication method thereof is also provided. The DMOS transistor includes a semiconductor substrate having a first conductivity type and a semiconductor region having a second conductivity type formed on the semiconductor substrate. A drain having a second conductivity type is formed on the semiconductor region. A high-concentration buried impurity layer having a second conductivity type is formed on the semiconductor region under the drain. A body region having a first conductivity type is formed in the semiconductor substrate spaced a predetermined distance from the semiconductor region. A source having a second conductivity type is formed on the body region. A gate electrode is formed on the semiconductor substrate having a gate insulative film formed thereon. A source electrode and a drain electrode coupled respectively to the source and the drain are formed on the resultant structure.
摘要:
A microplasma device of the invention includes a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel upon application of suitable voltage and at least one of the electrodes is encapsulated within the thick metal oxide layer. Large arrays can be formed and are highly robust as lack of microcracks in the oxide avoid dielectric breakdown.