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公开(公告)号:US09778493B1
公开(公告)日:2017-10-03
申请号:US15409381
申请日:2017-01-18
Applicant: Oracle International Corporation
Inventor: Ashok V. Krishnamoorthy , Jock T. Bovington , Xuezhe Zheng , Ying Luo , Shiyun Lin
CPC classification number: G02F1/011 , G02F2201/126 , G02F2201/34 , G02F2203/15 , G02F2203/70 , H01S3/082 , H01S3/0826 , H01S3/083 , H01S3/107 , H01S5/0265 , H01S5/125 , H01S5/142 , H01S5/3013 , H01S5/50
Abstract: A dual-ring-modulated laser includes a gain medium having a reflective end coupled to an associated gain-medium reflector and an output end, which is coupled to a reflector circuit through an input waveguide to form a lasing cavity. The reflector circuit comprises: a first ring modulator; a second ring modulator; and a shared waveguide that optically couples the first and second ring modulators together. The first and second ring modulators have resonance peaks that are tuned to be offset in alignment from each other to provide an effective reflectance having a flat-top response, which is aligned with an associated lasing cavity mode. The first and second ring modulators are driven in tandem based on the same electrical input signal, whereby the resonance peaks of the first and second ring modulators shift wavelengths in the same direction during modulation, and an effective reflectance stays within the flat-top wavelength range.
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公开(公告)号:US09939663B2
公开(公告)日:2018-04-10
申请号:US15421300
申请日:2017-01-31
Applicant: Oracle International Corporation
Inventor: Ying Luo , Shiyun Lin , Ashok V. Krishnamoorthy , Jock T. Bovington , Xuezhe Zheng
IPC: H01S5/00 , H01S3/10 , H01S3/083 , G02F1/01 , H01S5/30 , H01S5/50 , H01S5/125 , H01S5/026 , H01S5/10 , H01S5/14 , H01S5/02 , H01S5/028 , H01S5/12
CPC classification number: G02F1/011 , G02F2201/126 , G02F2201/34 , G02F2203/15 , G02F2203/70 , H01S5/021 , H01S5/0261 , H01S5/0265 , H01S5/0287 , H01S5/1032 , H01S5/12 , H01S5/125 , H01S5/142 , H01S5/3013 , H01S5/50
Abstract: A dual-ring-modulated laser includes a gain medium having a reflective end coupled to a gain-medium reflector and an output end coupled to a reflector circuit to form a lasing cavity. This reflector circuit comprises: a first ring modulator; a second ring modulator; and a shared waveguide that optically couples the first and second ring modulators. The first and second ring modulators have resonance peaks, which are tuned to have an alignment separation from each other. During operation, the first and second ring modulators are driven in opposing directions based on the same electrical input signal, so the resonance peaks of the first and second ring modulators shift wavelengths in the opposing directions during modulation. The modulation shift for each of the resonance peaks equals the alignment separation, so the resonance peaks interchange positions during modulation to cancel out reflectivity changes in the lasing cavity caused by the modulation.
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公开(公告)号:US09812842B2
公开(公告)日:2017-11-07
申请号:US15189598
申请日:2016-06-22
Applicant: Oracle International Corporation
Inventor: Ivan Shubin , Xuezhe Zheng , Jin Yao , Jin-Hyoung Lee , Jock T. Bovington , Shiyun Lin , Ashok V. Krishnamoorthy
CPC classification number: H01S5/14 , H01S3/08059 , H01S5/02252 , H01S5/0228 , H01S5/1028 , H01S5/1092 , H01S5/12 , H01S5/141
Abstract: A hybrid optical source comprises an optical gain chip containing an optical gain material that provides an optical signal, and an optical reflector chip including an optical reflector. It also includes a semiconductor-on-insulator (SOI) chip, which comprises a semiconductor layer having a planarized surface facing the semiconductor reflector. The semiconductor layer includes: an optical coupler to redirect the optical signal to and from the planarized surface; and an optical waveguide to convey the optical signal from the optical coupler. While assembling these chips, a height of the optical gain material is referenced against the planarized surface of the semiconductor layer, a height of the optical reflector is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler, so that the optical signal emanating from the optical gain material is reflected by the optical reflector and into the optical coupler.
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公开(公告)号:US20170038609A1
公开(公告)日:2017-02-09
申请号:US14794457
申请日:2015-07-08
Applicant: ORACLE INTERNATIONAL CORPORATION
Inventor: Ying L. Luo , Shiyun Lin , Xuezhe Zheng , Ashok V. Krishnamoorthy
CPC classification number: G02F1/025 , G02F1/0123 , G02F1/2255 , G02F2001/0151 , G02F2001/212 , G02F2202/32
Abstract: An optical modulator is described. This optical modulator may be implemented using silicon-on-insulator (SOI) technology. In particular, a semiconductor layer in an SOI platform may include a photonic crystal having a group velocity of light that is less than that of the semiconductor layer. Moreover, an optical modulator (such as a Mach-Zehnder interferometer) may be implemented in the photonic crystal with a vertical junction in the semiconductor layer. During operation of the optical modulator, an input optical signal may be split into two different optical signals that feed two optical waveguides, and then subsequently combined into an output optical signal. Furthermore, during operation, time-varying bias voltages may be applied across the vertical junction in the optical modulator using contacts defined along a lateral direction of the optical modulator.
Abstract translation: 描述了光调制器。 该光调制器可以使用绝缘体上硅(SOI)技术来实现。 特别地,SOI平台中的半导体层可以包括具有小于半导体层的光的组光速的光子晶体。 此外,可以在半导体层中具有垂直结的光子晶体中实现光调制器(诸如马赫 - 曾德干涉仪)。 在光调制器的操作期间,输入光信号可以被分成两个不同的光信号,其馈送两个光波导,然后被组合成输出光信号。 此外,在操作期间,可以使用沿着光学调制器的横向方向限定的触点在光调制器中的垂直结上施加时变偏置电压。
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公开(公告)号:US09373934B2
公开(公告)日:2016-06-21
申请号:US14165132
申请日:2014-01-27
Applicant: Oracle International Corporation
Inventor: Shiyun Lin , Stevan S. Djordjevic , John E. Cunningham , Xuezhe Zheng , Ashok V. Krishnamoorthy
CPC classification number: H01S5/141 , H01S3/105 , H01S5/02252 , H01S5/026 , H01S5/1014 , H01S5/2018 , H01S5/4062 , H01S5/4087
Abstract: A hybrid optical source includes a substrate with an optical amplifier (such as a III-V semiconductor optical amplifier). The substrate is coupled at an angle (such as an angle between 0 and 90°) to a silicon-on-insulator chip. In particular, the substrate may be optically coupled to the silicon-on-insulator chip by an optical coupler (such as a diffraction grating or a mirror) that efficiently couples (i.e., with low optical loss) an optical signal into a sub-micron silicon-on-insulator optical waveguide. Moreover, the silicon-on-insulator optical waveguide optically couples the light to a reflector to complete the hybrid optical source.
Abstract translation: 混合光源包括具有光放大器(例如III-V半导体光放大器)的衬底。 衬底以一个角度(例如0和90°之间的角度)耦合到绝缘体上硅芯片上。 特别地,衬底可以通过光耦合器(例如衍射光栅或反射镜)光学耦合到绝缘体上硅芯片,该光耦合器(例如,具有低光损耗)将光信号有效地耦合到亚微米级 绝缘体上硅光波导。 此外,绝缘体上的光波导光将光耦合到反射器以完成混合光源。
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公开(公告)号:US20170139237A1
公开(公告)日:2017-05-18
申请号:US15421300
申请日:2017-01-31
Applicant: Oracle International Corporation
Inventor: Ying Luo , Shiyun Lin , Ashok V. Krishnamoorthy , Jock T. Bovington , Xuezhe Zheng
CPC classification number: G02F1/011 , G02F2201/126 , G02F2201/34 , G02F2203/15 , G02F2203/70 , H01S5/021 , H01S5/0261 , H01S5/0265 , H01S5/0287 , H01S5/1032 , H01S5/12 , H01S5/125 , H01S5/142 , H01S5/3013 , H01S5/50
Abstract: A dual-ring-modulated laser includes a gain medium having a reflective end coupled to a gain-medium reflector and an output end coupled to a reflector circuit to form a lasing cavity. This reflector circuit comprises: a first ring modulator; a second ring modulator; and a shared waveguide that optically couples the first and second ring modulators. The first and second ring modulators have resonance peaks, which are tuned to have an alignment separation from each other. During operation, the first and second ring modulators are driven in opposing directions based on the same electrical input signal, so the resonance peaks of the first and second ring modulators shift wavelengths in the opposing directions during modulation. The modulation shift for each of the resonance peaks equals the alignment separation, so the resonance peaks interchange positions during modulation to cancel out reflectivity changes in the lasing cavity caused by the modulation.
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公开(公告)号:US20150362764A1
公开(公告)日:2015-12-17
申请号:US14742431
申请日:2015-06-17
Applicant: Oracle International Corporation
Inventor: John E. Cunningham , Jin Yao , Ivan Shubin , Guoliang Li , Xuezhe Zheng , Shiyun Lin , Hiren D. Thacker , Stevan S. Djordjevic , Ashok V. Krishnamoorthy
CPC classification number: G02F1/025 , G02B6/12 , G02B2006/12107 , G02B2006/12142 , G02F1/0018 , G02F1/015 , G02F2001/0157 , H01L21/26513 , H01L31/02327 , Y02P70/521
Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.
Abstract translation: 集成光学器件包括设置在光波导的顶表面上的电吸收调制器。 电吸收调制器包括设置在n型掺杂硅侧壁和p型掺杂硅侧壁之间的空腔中的锗。 通过在n型掺杂硅侧壁和p型掺杂硅侧壁之间施加电压,可以在光波导的平面中产生电场,但是垂直于光信号的传播方向。 该电场移动锗的带隙,从而调制光信号。
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公开(公告)号:US20150280403A1
公开(公告)日:2015-10-01
申请号:US14165132
申请日:2014-01-27
Applicant: Oracle International Corporation
Inventor: Shiyun Lin , Stevan S. Djordjevic , John E. Cunningham , Xuezhe Zheng , Ashok V. Krishnamoorthy
CPC classification number: H01S5/141 , H01S3/105 , H01S5/02252 , H01S5/026 , H01S5/1014 , H01S5/2018 , H01S5/4062 , H01S5/4087
Abstract: A hybrid optical source includes a substrate with an optical amplifier (such as a III-V semiconductor optical amplifier). The substrate is coupled at an angle (such as an angle between 0 and 90°) to a silicon-on-insulator chip. In particular, the substrate may be optically coupled to the silicon-on-insulator chip by an optical coupler (such as a diffraction grating or a mirror) that efficiently couples (i.e., with low optical loss) an optical signal into a sub-micron silicon-on-insulator optical waveguide. Moreover, the silicon-on-insulator optical waveguide optically couples the light to a reflector to complete the hybrid optical source.
Abstract translation: 混合光源包括具有光放大器(例如III-V半导体光放大器)的衬底。 衬底以一个角度(例如0和90°之间的角度)耦合到绝缘体上硅芯片上。 特别地,衬底可以通过光耦合器(例如衍射光栅或反射镜)光学耦合到绝缘体上硅芯片,该光耦合器(例如,具有低光损耗)将光信号有效地耦合到亚微米级 绝缘体上硅光波导。 此外,绝缘体上的光波导光将光耦合到反射器以完成混合光源。
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公开(公告)号:US09142698B1
公开(公告)日:2015-09-22
申请号:US14252607
申请日:2014-04-14
Applicant: Oracle International Corporation
Inventor: John E. Cunningham , Jin Yao , Ivan Shubin , Guoliang Li , Xuezhe Zheng , Shiyun Lin , Hiren D. Thacker , Stevan S. Djordjevic , Ashok V. Krishnamoorthy
IPC: H01L31/18 , H01L31/0232
CPC classification number: G02F1/025 , G02B6/12 , G02B2006/12107 , G02B2006/12142 , G02F1/0018 , G02F1/015 , G02F2001/0157 , H01L21/26513 , H01L31/02327 , Y02P70/521
Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.
Abstract translation: 集成光学器件包括设置在光波导的顶表面上的电吸收调制器。 电吸收调制器包括设置在n型掺杂硅侧壁和p型掺杂硅侧壁之间的空腔中的锗。 通过在n型掺杂硅侧壁和p型掺杂硅侧壁之间施加电压,可以在光波导的平面中产生电场,但是垂直于光信号的传播方向。 该电场移动锗的带隙,从而调制光信号。
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公开(公告)号:US20170294760A1
公开(公告)日:2017-10-12
申请号:US15189598
申请日:2016-06-22
Applicant: Oracle International Corporation
Inventor: Ivan Shubin , Xuezhe Zheng , Jin Yao , Jin-Hyoung Lee , Jock T. Bovington , Shiyun Lin , Ashok V. Krishnamoorthy
CPC classification number: H01S5/14 , H01S3/08059 , H01S5/02252 , H01S5/0228 , H01S5/1028 , H01S5/1092 , H01S5/12 , H01S5/141
Abstract: A hybrid optical source comprises an optical gain chip containing an optical gain material that provides an optical signal, and an optical reflector chip including an optical reflector. It also includes a semiconductor-on-insulator (SOI) chip, which comprises a semiconductor layer having a planarized surface facing the semiconductor reflector. The semiconductor layer includes: an optical coupler to redirect the optical signal to and from the planarized surface; and an optical waveguide to convey the optical signal from the optical coupler. While assembling these chips, a height of the optical gain material is referenced against the planarized surface of the semiconductor layer, a height of the optical reflector is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler, so that the optical signal emanating from the optical gain material is reflected by the optical reflector and into the optical coupler.
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