公开(公告)号：US09919509B2

公开(公告)日：2018-03-20

申请号：US13977134

申请日：2011-12-16

申请人： Osamu Hirakawa ,  Naoto Yoshitaka ,  Masaru Honda ,  Xavier Francois Brun ,  Charles Wayne Singleton, Jr.

发明人： Osamu Hirakawa ,  Naoto Yoshitaka ,  Masaru Honda ,  Xavier Francois Brun ,  Charles Wayne Singleton, Jr.

IPC分类号： B32B43/00 ,  H01L21/67 ,  H01L21/687 ,  B32B38/10 ,  B32B37/06 ,  B32B41/00

CPC分类号： B32B43/006 ,  B32B37/06 ,  B32B38/10 ,  B32B41/00 ,  B32B2309/68 ,  B32B2310/0472 ,  B32B2457/14 ,  H01L21/67051 ,  H01L21/67092 ,  H01L21/67103 ,  H01L21/68728 ,  H01L2221/68381 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1126 ,  Y10T156/1137 ,  Y10T156/1153 ,  Y10T156/1189 ,  Y10T156/1911 ,  Y10T156/1939 ,  Y10T156/1972

摘要： A peeling device for peeling off a substrate to be processed and a support substrate from an overlapped substrate, the overlapped substrate being formed by bonding the substrate to be processed and the support substrate by an adhesive, which includes: a first holding unit configured to heat the substrate to be processed and configured to hold the substrate to be processed; a second holding unit configured to heat the support substrate and configured to hold the support substrate; a moving mechanism configured to horizontally move at least one of the first holding unit and the second holding unit relative to each other; and an inert gas supply mechanism configured to supply an inert gas onto a bonding surface of the substrate to be processed or a bonding surface of the support substrate.

公开(公告)号：US09827756B2

公开(公告)日：2017-11-28

申请号：US14009850

申请日：2012-03-16

申请人： Osamu Hirakawa ,  Masaru Honda ,  Xavier Francois Brun ,  Charles Wayne Singleton, Jr.

发明人： Osamu Hirakawa ,  Masaru Honda ,  Xavier Francois Brun ,  Charles Wayne Singleton, Jr.

IPC分类号： B32B38/10 ,  H01L21/67 ,  H01L21/677 ,  B32B43/00

CPC分类号： B32B38/10 ,  B32B43/006 ,  B32B2457/14 ,  H01L21/67092 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67748 ,  Y10T156/1137 ,  Y10T156/1153 ,  Y10T156/1189 ,  Y10T156/1911 ,  Y10T156/1939 ,  Y10T156/1972

摘要： A separation apparatus for separating a superposed substrate in which a processing target substrate and a supporting substrate are joined together with an adhesive, into the processing target substrate and the supporting substrate includes: a first holding unit that includes a heating mechanism heating the processing target substrate and holds the processing target substrate; a second holding unit that includes a heating mechanism heating the supporting substrate and holds the supporting substrate; a moving mechanism that relatively moves at least the first holding unit or the second holding unit in a horizontal direction; and a porous part that is annularly provided along an outer peripheral portion of the first holding unit and formed with a plurality of pores, and supplies an inert gas to the outer peripheral portion of the first holding unit holding the processing target substrate.

公开(公告)号：US09956755B2

公开(公告)日：2018-05-01

申请号：US14000625

申请日：2012-03-16

申请人： Osamu Hirakawa ,  Masaru Honda ,  Xavier Francois Brun ,  Charles Wayne Singleton, Jr.

发明人： Osamu Hirakawa ,  Masaru Honda ,  Xavier Francois Brun ,  Charles Wayne Singleton, Jr.

IPC分类号： B32B38/10 ,  B32B43/00 ,  H01L21/67 ,  H01L21/677

CPC分类号： B32B43/006 ,  B32B38/10 ,  H01L21/67092 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67748 ,  Y10T156/1126 ,  Y10T156/1137 ,  Y10T156/1153 ,  Y10T156/1168 ,  Y10T156/1189 ,  Y10T156/1911 ,  Y10T156/1933 ,  Y10T156/1939 ,  Y10T156/1972

摘要： A method includes: a first step of disposing the superposed substrate at a position where the superposed substrate is not in contact with a first holding unit and a second holding unit in a space between the first holding unit and the second holding unit, and supplying an inert gas into the space; a second step of thereafter relatively moving the first holding unit and the second holding unit in the vertical direction, and holding the processing target substrate by the first holding unit and holding the supporting substrate by the second holding unit; and a third step of thereafter relatively moving the first holding unit and the second holding unit in the horizontal direction while heating the processing target substrate held by the first holding unit and the supporting substrate held by the second holding unit, to separate the processing target substrate and the supporting substrate from each other.

公开(公告)号：US10008419B2

公开(公告)日：2018-06-26

申请号：US14343598

申请日：2012-08-22

申请人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi ,  Xavier Francois Brun ,  Charles Wayne Singleton, Jr. ,  Kabirkumar Mirpuri

发明人： Shinji Okada ,  Masatoshi Shiraishi ,  Masatoshi Deguchi ,  Xavier Francois Brun ,  Charles Wayne Singleton, Jr. ,  Kabirkumar Mirpuri

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L21/67 ,  H01L21/02 ,  H01L21/683

CPC分类号： H01L22/12 ,  H01L21/02068 ,  H01L21/67017 ,  H01L21/67092 ,  H01L21/6715 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10T156/1911

摘要： A superposed wafer is separated to a processing target wafer and a supporting wafer while being heated. Then, an adhesive on a joint surface of the processing target wafer is removed by supplying an organic solvent onto the joint surface of the processing target wafer. Then, an oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed by supplying acetic acid to the joint surface of the processing target wafer. Then, the joint surface of the processing target wafer is inspected. Then, based on an inspection result, the adhesive on the joint surface of the processing target wafer is removed and the oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed.