Semiconductor manufacturing facility
    1.
    发明授权
    Semiconductor manufacturing facility 失效
    半导体制造厂

    公开(公告)号:US06370897B1

    公开(公告)日:2002-04-16

    申请号:US09670343

    申请日:2000-09-27

    IPC分类号: F25B2700

    摘要: A cooling jacket unit (5) is provided to a periphery of a heating furnace of a heat treatment apparatus. A cooling unit has a double water jacket comprising an inner fluid passage (51) and an outer fluid passage (52), and cooling water supplied to the outer fluid passage exits from the inner fluid passage. The temperatures of the inlet port and the outlet port of the cooling jacket unit (5) are set to, for example, 40° C. and 85° C., respectively, and the cooling water (warmed exhaust water) from the outlet port is supplied to a heat recovery part (2). Heat is recovered from the cooling water by the heat recovery part (29, and the recovered heat is reused for heating a boiler water and the like. The warmed exhaust water from which the heat is recovered is supplied again to the cooling jacket unit (5) as the cooling water.

    摘要翻译: 在热处理装置的加热炉的周边设有冷却套筒(5)。 冷却单元具有包括内部流体通道(51)和外部流体通道(52)的双重水套,并且供应到外部流体通道的冷却水从内部流体通道离开。 冷却套筒单元(5)的入口和出口的温度分别设定为例如40℃和85℃,并且来自出口的冷却水(加热的排出水) 被供给到热回收部(2)。 通过热回收部(29)从冷却水回收热量,回收的热量再次用于加热锅炉用水等,再次将热回收的加热废水再次供给到冷却套(5) )作为冷却水。

    Semiconductor manufacturing facility, semiconductor manufacturing apparatus and semiconductor manufacturing method
    2.
    发明授权
    Semiconductor manufacturing facility, semiconductor manufacturing apparatus and semiconductor manufacturing method 失效
    半导体制造设备,半导体制造装置和半导体制造方法

    公开(公告)号:US06547660B1

    公开(公告)日:2003-04-15

    申请号:US09669909

    申请日:2000-09-27

    IPC分类号: B01L104

    摘要: A semiconductor manufacturing facility is provided, which can reduce a thermal load in a clean room and reduce an amount of energy thereof. Semiconductor manufacturing equipment, which generates heat when it is used, is installed in the clean room and is covered by a housing. The housing is configured to be capable of introducing the air inside the clean room into an interior thereof. The air inside the housing is exhausted outside the clean room through a plurality of exhaust passage members. A heat insulating material is associated with the housing to reduce the release of heat from the housing to the air inside the clean room. A space between the housing and the semiconductor manufacturing equipment may be hermetically sealed, and an air introducing member may be connected to the housing to take air outside the clean room into the hermetically sealed space.

    摘要翻译: 提供了一种半导体制造设备,其可以降低洁净室中的热负荷并减少其能量。 使用时产生热量的半导体制造设备安装在洁净室中并被壳体覆盖。 壳体构造成能够将清洁室内的空气引入其内部。 壳体内的空气通过多个排气通道构件在洁净室外排出。 绝热材料与壳体相关联,以减少热量从壳体释放到洁净室内的空气。 壳体和半导体制造设备之间的空间可以被气密地密封,并且空气引入构件可以连接到壳体以将清洁室外的空气吸入密封空间。

    Semiconductor manufacturing facility, semiconductor manufacturing apparatus and semiconductor manufacturing method
    3.
    发明授权
    Semiconductor manufacturing facility, semiconductor manufacturing apparatus and semiconductor manufacturing method 失效
    半导体制造设备,半导体制造装置和半导体制造方法

    公开(公告)号:US06427462B1

    公开(公告)日:2002-08-06

    申请号:US09669908

    申请日:2000-09-27

    IPC分类号: F27D900

    CPC分类号: H01L21/67109 Y02P80/156

    摘要: A heat generating part (1) of semiconductor manufacturing equipment is cooled by cooling water. An inner fluid passage (21) having an inlet port (31) of the cooling water on a vertically lower portion thereof is formed so as to surround a periphery of the heat generating part (1). An outer fluid passage (22) having an outlet port (32) of the cooling water on a vertically upper portion thereof is formed so as to surround a periphery of the inner fluid passage (21) and be capable of exchanging heat with the cooling water in the inner fluid passage. A communication passage (24) is provided to connect a vertically upper portion of said inner fluid passage and a vertically lower portion of said outer fluid passage. The cooling water flowing out of the outlet port (32) of the outer fluid passage (22) is supplied to the inlet port (31) of the inner fluid passage (21).

    摘要翻译: 半导体制造设备的发热部件(1)由冷却水冷却。 在其垂直下部具有冷却水的入口(31)的内部流体通道(21)形成为围绕发热部(1)的周边。 形成有在其上部上具有冷却水的出口(32)的外部流体通道(22),以便围绕内部流体通道(21)的周边并且能够与冷却水进行热交换 在内部流体通道中。 连通通道(24)设置成连接所述内部流体通道的垂直上部和所述外部流体通道的垂直下部。 从外部流路(22)的出口(32)流出的冷却水被供给到内部流体通路(21)的入口(31)。

    Heat resisting vacuum insulating material and heating device
    4.
    发明授权
    Heat resisting vacuum insulating material and heating device 有权
    耐热真空绝热材料及加热装置

    公开(公告)号:US08299403B2

    公开(公告)日:2012-10-30

    申请号:US12298192

    申请日:2007-04-20

    IPC分类号: F23Q7/22

    摘要: A heating device includes a heat resisting vacuum insulator (4) wound around the outer periphery of an electric heater (3) disposed along the outer wall of an exhaust pipe (1), wherein the electric heater (3) has a resistance heating element and a heat resisting electric insulator covering this resistance heating element, and the heat resisting vacuum insulator (4) includes a hollow platy covering material air-tightly sealed thereinside by a metal seat (5) having a heat resisting temperature of at least 100° C., and a fibrous or granular filling material (6) filled in the hollow portion of this covering material and having a heat resisting temperature of at least 100° C., the inside of the covering material being kept in a vacuum state.

    摘要翻译: 加热装置包括围绕沿着排气管(1)的外壁设置的电加热器(3)的外周缠绕的耐热真空绝缘体(4),其中电加热器(3)具有电阻加热元件, 覆盖该电阻加热元件的耐热电绝缘体,并且耐热真空绝热体(4)包括由耐热温度为至少100℃的金属座(5)气密地密封在其中的中空板状覆盖材料。 以及填充在该覆盖材料的中空部分中并具有至少100℃的耐热温度的纤维或颗粒填充材料(6),覆盖材料的内部保持在真空状态。

    HEAT RESISTING VACUUM INSULATING MATERIAL AND HEATING DEVICE
    6.
    发明申请
    HEAT RESISTING VACUUM INSULATING MATERIAL AND HEATING DEVICE 有权
    耐热真空绝热材料和加热装置

    公开(公告)号:US20090184100A1

    公开(公告)日:2009-07-23

    申请号:US12298192

    申请日:2007-04-20

    IPC分类号: H05B3/02 D02G3/00

    摘要: A heating device which can prevent unused active chemical species from attaching to the bodies of various vacuum devices or depositing on the inner wall of their exhaust pipes to thereby be able to make the size of exhaust pipes smaller than before and make the exhaust pipe maintenance easier. The heating device comprises a heat resisting vacuum insulator (4) wound around the outer periphery of an electric heater (3) disposed along the outer wall of an exhaust pipe (1), wherein the electric heater (3) has a resistance heating element and a heat resisting electric insulator covering this resistance heating element, and the heat resisting vacuum insulator (4) comprises a hollow platy covering material air-tightly sealed thereinside by a metal seat (5) having a heat resisting temperature of at least 100° C., and a fibrous or granular filling material (6) filled in the hollow portion of this covering material and having a heat resisting temperature of at least 100° C., the inside of the covering material being kept vacuum.

    摘要翻译: 一种加热装置,其可以防止未使用的活性化学物质附着到各种真空装置的主体或沉积在其排气管的内壁上,从而能够使排气管的尺寸比以前更小,并使排气管维持更容易 。 加热装置包括围绕沿着排气管(1)的外壁设置的电加热器(3)的外周缠绕的耐热真空绝缘体(4),其中电加热器(3)具有电阻加热元件 覆盖该电阻加热元件的耐热电绝缘体,并且耐热真空绝缘体(4)包括由耐热温度为至少100℃的金属座(5)气密地密封在其中的中空板状覆盖材料。 以及填充在该覆盖材料的中空部分中并具有至少100℃的耐热温度的纤维或颗粒填充材料(6),覆盖材料的内部保持真空。

    Plasma processing apparatus
    7.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号:US09105450B2

    公开(公告)日:2015-08-11

    申请号:US13145398

    申请日:2009-11-02

    摘要: A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.

    摘要翻译: 微波等离子体处理装置包括:处理容器,其中气体被微波激发,基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板,其布置在处理容器的内表面上,并将微波放射到处理容器中; 多个第一同轴波导,与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。 同轴波导分配器包括第二同轴波导,其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

    ROTATION MECHANISM FOR GAS EXHAUST PUMP, MANUFACTURING METHOD OF THE SAME, GAS EXHAUST PUMP HAVING ROTATION MECHANISM, AND MANUFACTURING METHOD OF THE SAME
    8.
    发明申请
    ROTATION MECHANISM FOR GAS EXHAUST PUMP, MANUFACTURING METHOD OF THE SAME, GAS EXHAUST PUMP HAVING ROTATION MECHANISM, AND MANUFACTURING METHOD OF THE SAME 审中-公开
    用于排气泵的旋转机构,其制造方法,具有旋转机构的气体排气泵及其制造方法

    公开(公告)号:US20140186162A1

    公开(公告)日:2014-07-03

    申请号:US14131299

    申请日:2012-06-27

    IPC分类号: F01D5/02

    摘要: In a gas exhaust pump, there is provided a rotation mechanism that can ensure safe rotation and can greatly reduce the usage of a seal gas. A rotation mechanism of the present invention is formed of a rotating shaft and a seal housing. Between the rotating shaft and the seal housing, there is provided a predetermined gap. On at least one of an outer surface of the rotating shaft and an inner surface of the seal housing, there is provided a PFA film. As to a PFA film on a surface of at least one of the rotating shaft and the seal housing, after coating with PFA the wall surface of the rotation mechanism member defining at least the gap, followed by melting and remelting processes, the PFA film is formed to have a high smoothness on its free surface.

    摘要翻译: 在排气泵中,设置有能够确保安全旋转的旋转机构,能够大幅度减少密封气体的使用。 本发明的旋转机构由旋转轴和密封壳构成。 在旋转轴和密封壳体之间,提供预定间隙。 在旋转轴的外表面和密封壳体的内表面中的至少一个上,设置有PFA膜。 对于至少一个旋转轴和密封壳体的表面上的PFA膜,在用PFA涂覆之后,旋转机构构件的壁表面至少限定间隙,然后熔融和重熔过程,PFA膜是 形成在其自由表面上具有高平滑度。