公开(公告)号：US20130181228A1

公开(公告)日：2013-07-18

申请号：US13617048

申请日：2012-09-14

申请人： Osamu USUI ,  Naoki YOSHIMATSU ,  Masao KIKUCHI

发明人： Osamu USUI ,  Naoki YOSHIMATSU ,  Masao KIKUCHI

IPC分类号： H01L25/07 ,  H01L21/98 ,  H01L29/161

CPC分类号： H01L24/97 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/3755 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/73213 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/84

摘要： First chip main surfaces of first semiconductor chips are bonded to a heat spreader, and second chip main surfaces of the first semiconductor chips are bonded to a first electrode. First chip main surfaces of second semiconductor chips are bonded to a heat spreader, and second chip main surfaces of the second semiconductor chips are bonded to a first electrode. A plurality of electrodes are provided by a lead frame. An insulating member is provided on a side opposite to the chips when viewed from the heat spreader. An insulating substrate is provided on a side opposite to the chips when viewed from the first electrodes.

摘要翻译： 第一半导体芯片的第一芯片主表面被接合到散热器，并且第一半导体芯片的第二芯片主表面被接合到第一电极。 将第二半导体芯片的第一芯片主表面接合到散热器，并且将第二半导体芯片的第二芯片主表面接合到第一电极。 多个电极由引线框架提供。 当从散热器观察时，绝缘构件设置在与芯片相对的一侧上。 当从第一电极观察时，在与芯片相对的一侧上设置绝缘基板。

公开(公告)号：US20140035658A1

公开(公告)日：2014-02-06

申请号：US13829418

申请日：2013-03-14

申请人： Osamu USUI

发明人： Osamu USUI

IPC分类号： G05F1/10

CPC分类号： G05F1/10 ,  H01L24/34 ,  H01L24/36 ,  H01L24/40 ,  H01L2224/40137 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A power semiconductor device module includes a plurality of inverters, each having a first transistor and a second transistor that are interposed in series between a first potential and a second potential and that operate complementarily. The plurality of inverters are assembled into a module. Only one predetermined inverter of the plurality of inverters is configured to detect temperatures of the first and second transistors, and control terminals for detection of the temperatures of the first and second transistors protrude from sides of the module.

摘要翻译： 功率半导体器件模块包括多个反相器，每个反相器具有串联插在第一电位和第二电位之间并互补操作的第一晶体管和第二晶体管。 多个逆变器组装成模块。 多个逆变器中只有一个预定的反相器被配置为检测第一和第二晶体管的温度，并且用于检测第一和第二晶体管的温度的控制端子从模块的侧面突出。