公开(公告)号：US09865591B2

公开(公告)日：2018-01-09

申请号：US15342023

申请日：2016-11-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Nobuyuki Horikawa ,  Osamu Kusumoto ,  Masashi Hayashi ,  Masao Uchida

IPC: H01L29/15 ,  H01L27/06 ,  H01L29/78 ,  H01L27/04 ,  H01L29/861 ,  H01L29/868 ,  H01L29/06 ,  H01L29/12 ,  H01L29/16 ,  H01L29/41

CPC classification number: H01L27/0605 ,  H01L27/04 ,  H01L27/0727 ,  H01L29/06 ,  H01L29/0623 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/41 ,  H01L29/78 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/868

Abstract: A silicon carbide semiconductor device includes a transistor region, a diode region, a gate line region, and a gate pad region. The gate pad region and the gate line region are each disposed to be sandwiched between the diode region and the diode region, and a gate electrode on the gate pad region and the gate line region is formed on an insulating film formed on an epitaxial layer. Thus, breakdown of the insulating film in the gate region can be prevented without causing deterioration in quality of the gate insulating film, upon switching and avalanche breakdown.

公开(公告)号：US09214546B2

公开(公告)日：2015-12-15

申请号：US14413203

申请日：2014-02-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masashi Hayashi ,  Masao Uchida

IPC: H01L29/78 ,  H01L29/739 ,  H01L29/06 ,  H01L29/12 ,  H01L27/02 ,  H01L27/07 ,  H01L29/16

CPC classification number: H01L29/7815 ,  H01L27/0255 ,  H01L27/0296 ,  H01L27/0727 ,  H01L29/06 ,  H01L29/0607 ,  H01L29/0619 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/7804 ,  H01L29/7811 ,  H01L29/7828

Abstract: A semiconductor device includes a silicon carbide semiconductor substrate, a silicon carbide layer, a switching element section, and an overvoltage detection element section whose area is smaller than that of the switching element section. The switching element section includes a first electrode pad, a first terminal section surrounding the first electrode pad and provided in the silicon carbide layer, and a first insulating film covering the first terminal section. The overvoltage detection element section includes a second electrode pad, a second terminal section surrounding the second electrode pad and provided in the silicon carbide layer, and a second insulating film covering the second terminal section and being in contact with the silicon carbide layer. A breakdown field strength of at least part of a portion of the second insulating film being in contact with the silicon carbide layer is lower than that of the first insulating film.

Abstract translation: 半导体器件包括碳化硅半导体衬底，碳化硅层，开关元件部分和面积小于开关元件部分的面积的过电压检测元件部分。 开关元件部分包括第一电极焊盘，围绕第一电极焊盘并设置在碳化硅层中的第一端子部分和覆盖第一端子部分的第一绝缘膜。 过电压检测元件部分包括第二电极焊盘，围绕第二电极焊盘并设置在碳化硅层中的第二端子部分和覆盖第二端子部分并与碳化硅层接触的第二绝缘膜。 第二绝缘膜的与碳化硅层接触的部分的至少一部分的击穿场强低于第一绝缘膜的击穿场强。

公开(公告)号：USRE49195E1

公开(公告)日：2022-08-30

申请号：US16294567

申请日：2019-03-06

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Nobuyuki Horikawa ,  Osamu Kusumoto ,  Masashi Hayashi ,  Masao Uchida

IPC: H01L27/04 ,  H01L29/06 ,  H01L29/78 ,  H01L29/861 ,  H01L29/868 ,  H01L29/12 ,  H01L29/16 ,  H01L29/41 ,  H01L27/06 ,  H01L27/07 ,  H01L29/66 ,  H01L29/423 ,  H01L29/739

Abstract: A silicon carbide semiconductor device includes a transistor region, a diode region, a gate line region, and a gate pad region. The gate pad region and the gate line region are each disposed to be sandwiched between the diode region and the diode region, and a gate electrode on the gate pad region and the gate line region is formed on an insulating film formed on an epitaxial layer. Thus, breakdown of the insulating film in the gate region can be prevented without causing deterioration in quality of the gate insulating film, upon switching and avalanche breakdown.

公开(公告)号：US09577044B2

公开(公告)日：2017-02-21

申请号：US14632895

申请日：2015-02-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masao Uchida ,  Masashi Hayashi ,  Koutarou Tanaka

IPC: H01L29/15 ,  H01L29/16 ,  H01L29/66 ,  H01L29/872 ,  H01L29/47 ,  H01L21/04 ,  H01L29/06 ,  H01L29/78 ,  H01L29/45 ,  H01L29/423

CPC classification number: H01L29/1608 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/423 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7828 ,  H01L29/872

Abstract: A semiconductor device includes first and second second-conductivity-type region groups containing multiple second-conductivity-type regions that are disposed on a first silicon carbide semiconductor layer of a first conductivity type, arrayed in parallel following one direction with a space between each other, and first and second electrodes disposed on the first silicon carbide semiconductor layer and forming a Schottky junction with the first silicon carbide semiconductor layer. The first electrode covers a position where a distance from adjacent first and second second-conductivity-type regions included in a first second-conductivity-type region group, and a distance from a third second-conductivity-type region included in a second second-conductivity-type region group and adjacent to the first and second second-conductivity-type regions, are equal. A Schottky barrier between the first electrode and the first silicon carbide semiconductor layer is larger than a Schottky barrier between the second electrode and the first silicon carbide semiconductor layer.

Abstract translation: 半导体器件包括第一和第二第二导电型区域组，其包含多个第二导电类型区域，所述第二导电类型区域设置在第一导电类型的第一碳化硅半导体层上，并排沿着一个方向并排放置 以及设置在第一碳化硅半导体层上并与第一碳化硅半导体层形成肖特基结的第一和第二电极。 第一电极覆盖从包括在第一第二导电类型区域组中的相邻第一和第二第二导电类型区域到与包括在第二第二导电类型区域组中的第三第二导电类型区域的距离的位置， 导电类型区域组并且与第一和第二第二导电类型区域相邻。 第一电极和第一碳化硅半导体层之间的肖特基势垒大于第二电极和第一碳化硅半导体层之间的肖特基势垒。

公开(公告)号：US20150206967A1

公开(公告)日：2015-07-23

申请号：US14413203

申请日：2014-02-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masashi Hayashi ,  Masao Uchida

IPC: H01L29/78 ,  H01L29/739 ,  H01L29/06 ,  H01L29/16 ,  H01L27/02

CPC classification number: H01L29/7815 ,  H01L27/0255 ,  H01L27/0296 ,  H01L27/0727 ,  H01L29/06 ,  H01L29/0607 ,  H01L29/0619 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/7804 ,  H01L29/7811 ,  H01L29/7828

Abstract: A semiconductor device includes a silicon carbide semiconductor substrate, a silicon carbide layer, a switching element section, and an overvoltage detection element section whose area is smaller than that of the switching element section. The switching element section includes a first electrode pad, a first terminal section surrounding the first electrode pad and provided in the silicon carbide layer, and a first insulating film covering the first terminal section. The overvoltage detection element section includes a second electrode pad, a second terminal section surrounding the second electrode pad and provided in the silicon carbide layer, and a second insulating film covering the second terminal section and being in contact with the silicon carbide layer. A breakdown field strength of at least part of a portion of the second insulating film being in contact with the silicon carbide layer is lower than that of the first insulating film.

Abstract translation: 半导体器件包括碳化硅半导体衬底，碳化硅层，开关元件部分和面积小于开关元件部分的面积的过电压检测元件部分。 开关元件部分包括第一电极焊盘，围绕第一电极焊盘并设置在碳化硅层中的第一端子部分和覆盖第一端子部分的第一绝缘膜。 过电压检测元件部分包括第二电极焊盘，围绕第二电极焊盘并设置在碳化硅层中的第二端子部分和覆盖第二端子部分并与碳化硅层接触的第二绝缘膜。 第二绝缘膜的与碳化硅层接触的部分的至少一部分的击穿场强低于第一绝缘膜的击穿场强。