公开(公告)号：US09362350B2

公开(公告)日：2016-06-07

申请号：US14556676

申请日：2014-12-01

申请人： PFC DEVICE HOLDINGS LTD

发明人： Hung-Hsin Kuo ,  Mei-Ling Chen

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/861 ,  H01L29/51 ,  H01L29/45

CPC分类号： H01L29/66136 ,  H01L21/26513 ,  H01L21/288 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/3215 ,  H01L21/324 ,  H01L29/0619 ,  H01L29/456 ,  H01L29/517 ,  H01L29/6609 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/861 ,  H01L29/868

摘要： A MOS P-N junction diode includes a semiconductor substrate, a mask layer, a guard ring, a gate oxide layer, a polysilicon structure, a polysilicon oxide layer, a central conductive layer, ion implantation layer, a channel region, and a metallic sputtering layer. For manufacturing the MOS P-N junction diode, a mask layer is formed on a semiconductor substrate. A gate oxide layer is formed on the semiconductor substrate, and a polysilicon structure is formed on the gate oxide layer, and a polysilicon oxide layer formed on the polysilicon structure. A guard ring, a central conductive layer and a channel region are formed in the semiconductor substrate. An ion implantation layer is formed within the guard ring and the central conductive layer. Afterwards, a metallic sputtering layer is formed, and the mask layer is partially exposed.

摘要翻译： MOS PN结二极管包括半导体衬底，掩模层，保护环，栅氧化层，多晶硅结构，多晶硅氧化物层，中心导电层，离子注入层，沟道区和金属溅射层 。 为了制造MOS P-N结二极管，在半导体衬底上形成掩模层。 在半导体衬底上形成栅极氧化层，在栅极氧化层上形成多晶硅结构，在多晶硅结构上形成多晶硅氧化物层。 在半导体衬底中形成保护环，中心导电层和沟道区。 在保护环和中心导电层内形成离子注入层。 之后，形成金属溅射层，并且掩模层部分露出。

公开(公告)号：US20170301771A1

公开(公告)日：2017-10-19

申请号：US15637266

申请日：2017-06-29

申请人： PFC Device Holdings Ltd.

发明人： Mei-Ling Chen ,  Hung-Hsin Kuo

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L21/285 ,  H01L29/872 ,  H01L21/225

CPC分类号： H01L29/66143 ,  H01L21/2256 ,  H01L21/28537 ,  H01L29/0623 ,  H01L29/402 ,  H01L29/872

摘要： A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity type. An insulating layer is formed on sidewalls of the trenches. Then, an ion implantation procedure is performed through the trenches to form a plurality of doped regions of a second conductivity type under the trenches. Subsequently, the trenches are filled with conductive structure such as metal structure or tungsten structure. At last, an electrode overlying the conductive structure and the substrate is formed. Thus, a Schottky contact appears between the electrode and the substrate. Each doped region and the substrate will form a PN junction to pinch off current flowing toward the Schottky contact to suppress the current leakage in a reverse bias mode.

公开(公告)号：US20170077262A1

公开(公告)日：2017-03-16

申请号：US15360155

申请日：2016-11-23

申请人： PFC Device Holdings Ltd

发明人： Mei-Ling Chen ,  Hung-Hsin Kuo

IPC分类号： H01L29/66 ,  H01L29/40 ,  H01L29/06 ,  H01L21/285 ,  H01L21/225 ,  H01L29/872

CPC分类号： H01L29/66143 ,  H01L21/2256 ,  H01L21/28537 ,  H01L29/0623 ,  H01L29/402 ,  H01L29/872

摘要： A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity type. An insulating layer is formed on sidewalls of the trenches. Then, an ion implantation procedure is performed through the trenches to form a plurality of doped regions of a second conductivity type under the trenches. Subsequently, the trenches are filled with conductive structure such as metal structure or tungsten structure. At last, an electrode overlying the conductive structure and the substrate is formed. Thus, a Schottky contact appears between the electrode and the substrate. Each doped region and the substrate will form a PN junction to pinch off current flowing toward the Schottky contact to suppress the current leakage in a reverse bias mode.

摘要翻译： 提供了一种用于制造沟槽肖特基整流器件的方法。 首先，在第一导电类型的衬底中形成多个沟槽。 绝缘层形成在沟槽的侧壁上。 然后，通过沟槽进行离子注入工艺，以在沟槽下形成第二导电类型的多个掺杂区域。 随后，用诸如金属结构或钨结构的导电结构填充沟槽。 最后，形成覆盖导电结构和基板的电极。 因此，在电极和衬底之间出现肖特基接触。 每个掺杂区域和衬底将形成PN结以夹紧朝向肖特基接触的电流，以抑制反向偏压模式中的电流泄漏。

公开(公告)号：US09865700B2

公开(公告)日：2018-01-09

申请号：US15413694

申请日：2017-01-24

申请人： PFC DEVICE HOLDINGS LTD

发明人： Hung-Hsin Kuo ,  Mei-Ling Chen

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L29/868 ,  H01L21/288 ,  H01L21/3213 ,  H01L21/3215 ,  H01L21/324 ,  H01L29/06 ,  H01L29/45 ,  H01L29/51 ,  H01L21/265

CPC分类号： H01L29/66136 ,  H01L21/26513 ,  H01L21/288 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/3215 ,  H01L21/324 ,  H01L29/0619 ,  H01L29/456 ,  H01L29/517 ,  H01L29/6609 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/861 ,  H01L29/868

摘要： A MOS P-N junction diode includes a semiconductor substrate, a mask layer, a guard ring, a gate oxide layer, a polysilicon structure, a central conductive layer, a silicon nitride layer, a metal diffusion layer, a channel region, and a metal sputtering layer. For manufacturing the MOS P-N junction diode, a mask layer is formed on a semiconductor substrate. A gate oxide layer is formed on the semiconductor substrate, and a polysilicon structure is formed on the gate oxide layer. A guard ring, a central conductive layer and a channel region are formed in the semiconductor substrate. A silicon nitride layer is formed on the central conductive layer. A metal diffusion layer is formed within the guard ring and the central conductive layer. Afterwards, a metal sputtering layer is formed, and the mask layer is partially exposed.

公开(公告)号：US09853120B2

公开(公告)日：2017-12-26

申请号：US15360155

申请日：2016-11-23

申请人： PFC Device Holdings Ltd

发明人： Mei-Ling Chen ,  Hung-Hsin Kuo

IPC分类号： H01L21/425 ,  H01L29/66 ,  H01L29/40 ,  H01L29/872 ,  H01L21/225 ,  H01L21/285 ,  H01L29/06

CPC分类号： H01L29/66143 ,  H01L21/2256 ,  H01L21/28537 ,  H01L29/0623 ,  H01L29/402 ,  H01L29/872

摘要： A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity type. An insulating layer is formed on sidewalls of the trenches. Then, an ion implantation procedure is performed through the trenches to form a plurality of doped regions of a second conductivity type under the trenches. Subsequently, the trenches are filled with conductive structure such as metal structure or tungsten structure. At last, an electrode overlying the conductive structure and the substrate is formed. Thus, a Schottky contact appears between the electrode and the substrate. Each doped region and the substrate will form a PN junction to pinch off current flowing toward the Schottky contact to suppress the current leakage in a reverse bias mode.

公开(公告)号：US20160071950A1

公开(公告)日：2016-03-10

申请号：US14940719

申请日：2015-11-13

申请人： PFC Device Holdings Ltd

发明人： Mei-Ling Chen ,  Hung-Hsin Kuo

IPC分类号： H01L29/66 ,  H01L21/225 ,  H01L21/285

CPC分类号： H01L29/66143 ,  H01L21/2256 ,  H01L21/28537 ,  H01L29/0623 ,  H01L29/402 ,  H01L29/872

摘要： A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity type. An insulating layer is formed on sidewalls of the trenches. Then, an ion implantation procedure is performed through the trenches to form a plurality of doped regions of a second conductivity type under the trenches. Subsequently, the trenches are filled with conductive structure such as poly-silicon structure or tungsten structure. At last, an electrode overlying the conductive structure and the substrate is formed. Thus, a Schottky contact appears between the electrode and the substrate. Each doped region and the substrate will form a PN junction to pinch off current flowing toward the Schottky contact to suppress the current leakage in a reverse bias mode.

摘要翻译： 提供了一种用于制造沟槽肖特基整流器件的方法。 首先，在第一导电类型的衬底中形成多个沟槽。 绝缘层形成在沟槽的侧壁上。 然后，通过沟槽进行离子注入工艺，以在沟槽下形成第二导电类型的多个掺杂区域。 随后，沟槽用诸如多晶硅结构或钨结构的导电结构填充。 最后，形成覆盖导电结构和基板的电极。 因此，在电极和衬底之间出现肖特基接触。 每个掺杂区域和衬底将形成PN结以夹紧朝向肖特基接触的电流，以抑制反向偏压模式中的电流泄漏。

公开(公告)号：US20170133480A1

公开(公告)日：2017-05-11

申请号：US15413694

申请日：2017-01-24

申请人： PFC DEVICE HOLDINGS LTD

发明人： Hung-Hsin Kuo ,  Mei-Ling Chen

IPC分类号： H01L29/66 ,  H01L21/288 ,  H01L21/3213 ,  H01L21/265 ,  H01L21/324 ,  H01L29/06 ,  H01L29/45 ,  H01L29/51 ,  H01L29/868 ,  H01L21/3215

CPC分类号： H01L29/66136 ,  H01L21/26513 ,  H01L21/288 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/3215 ,  H01L21/324 ,  H01L29/0619 ,  H01L29/456 ,  H01L29/517 ,  H01L29/6609 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/861 ,  H01L29/868

摘要： A MOS P-N junction diode includes a semiconductor substrate, a mask layer, a guard ring, a gate oxide layer, a polysilicon structure, a central conductive layer, a silicon nitride layer, a metal diffusion layer, a channel region, and a metal sputtering layer. For manufacturing the MOS P-N junction diode, a mask layer is formed on a semiconductor substrate. A gate oxide layer is formed on the semiconductor substrate, and a polysilicon structure is formed on the gate oxide layer. A guard ring, a central conductive layer and a channel region are formed in the semiconductor substrate. A silicon nitride layer is formed on the central conductive layer. A metal diffusion layer is formed within the guard ring and the central conductive layer. Afterwards, a metal sputtering layer is formed, and the mask layer is partially exposed.

公开(公告)号：US09219170B2

公开(公告)日：2015-12-22

申请号：US14526581

申请日：2014-10-29

申请人： PFC DEVICE HOLDINGS LTD

发明人： Kou-Liang Chao ,  Mei-Ling Chen ,  Tse-Chuan Su ,  Hung-Hsin Kuo

IPC分类号： H01L29/47 ,  H01L29/872 ,  H01L29/40 ,  H01L29/66

CPC分类号： H01L29/66143 ,  H01L21/2256 ,  H01L21/28537 ,  H01L29/0623 ,  H01L29/402 ,  H01L29/872

摘要： A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.

摘要翻译： 沟槽肖特基整流器件包括具有第一导电类型的衬底，在衬底中形成的多个沟槽，以及形成在沟槽的侧壁上的绝缘层。 沟槽填充有导电结构。 存在覆盖导电结构和衬底的电极，因此在电极和衬底之间形成肖特基接触。 在衬底中形成具有第二导电类型的多个嵌入式掺杂区域，并位于沟槽下方。 每个掺杂区域和衬底形成PN结以夹紧流向肖特基接触的电流，以便抑制电流泄漏。

公开(公告)号：US09905666B2

公开(公告)日：2018-02-27

申请号：US15637266

申请日：2017-06-29

申请人： PFC Device Holdings Ltd

发明人： Mei-Ling Chen ,  Hung-Hsin Kuo

IPC分类号： H01L21/425 ,  H01L29/66 ,  H01L29/872 ,  H01L29/06 ,  H01L21/225 ,  H01L21/285

CPC分类号： H01L29/66143 ,  H01L21/2256 ,  H01L21/28537 ,  H01L29/0623 ,  H01L29/402 ,  H01L29/872

摘要： A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity type. An insulating layer is formed on sidewalls of the trenches. Then, an ion implantation procedure is performed through the trenches to form a plurality of doped regions of a second conductivity type under the trenches. Subsequently, the trenches are filled with conductive structure such as metal structure or tungsten structure. At last, an electrode overlying the conductive structure and the substrate is formed. Thus, a Schottky contact appears between the electrode and the substrate. Each doped region and the substrate will form a PN junction to pinch off current flowing toward the Schottky contact to suppress the current leakage in a reverse bias mode.

公开(公告)号：US09536976B2

公开(公告)日：2017-01-03

申请号：US14940719

申请日：2015-11-13

申请人： PFC Device Holdings Ltd

发明人： Mei-Ling Chen ,  Hung-Hsin Kuo

IPC分类号： H01L21/425 ,  H01L29/66 ,  H01L29/40 ,  H01L29/872 ,  H01L21/225 ,  H01L21/285

CPC分类号： H01L29/66143 ,  H01L21/2256 ,  H01L21/28537 ,  H01L29/0623 ,  H01L29/402 ,  H01L29/872

摘要： A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity type. An insulating layer is formed on sidewalls of the trenches. Then, an ion implantation procedure is performed through the trenches to form a plurality of doped regions of a second conductivity type under the trenches. Subsequently, the trenches are filled with conductive structure such as poly-silicon structure or tungsten structure. At last, an electrode overlying the conductive structure and the substrate is formed. Thus, a Schottky contact appears between the electrode and the substrate. Each doped region and the substrate will form a PN junction to pinch off current flowing toward the Schottky contact to suppress the current leakage in a reverse bias mode.

摘要翻译： 提供了一种用于制造沟槽肖特基整流器件的方法。 首先，在第一导电类型的衬底中形成多个沟槽。 绝缘层形成在沟槽的侧壁上。 然后，通过沟槽进行离子注入工艺，以在沟槽下形成第二导电类型的多个掺杂区域。 随后，沟槽用诸如多晶硅结构或钨结构的导电结构填充。 最后，形成覆盖导电结构和基板的电极。 因此，在电极和衬底之间出现肖特基接触。 每个掺杂区域和衬底将形成PN结以夹紧朝向肖特基接触的电流，以抑制反向偏压模式中的电流泄漏。