PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    1.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
    等离子体加工设备和等离子体处理方法

    公开(公告)号:US20160064188A1

    公开(公告)日:2016-03-03

    申请号:US14818415

    申请日:2015-08-05

    CPC classification number: H01J37/32715 H01J37/32366 H01J37/32733 H01L21/681

    Abstract: A plasma processing apparatus that performs plasma processing to a substrate held on a transport carrier including a frame and a holding sheet that covers an opening of the frame includes: a transport mechanism that transports the transport carrier; a position measuring section that measures a position of the substrate to the frame; a plasma processing section that includes a plasma processing stage on which the transport carrier is loaded and a cover that covers the frame and a part of the holding sheet loaded on the plasma processing stage, and has a window section for exposing a part of the substrate; and a control section that controls the transport mechanism such that the transport carrier is loaded on the plasma processing stage to satisfy a positional relationship between the window section and the substrate based on the position information of the substrate to the frame.

    Abstract translation: 对保持在包括框架的运送载体上的基板和覆盖框架的开口的保持片进行等离子体处理的等离子体处理装置包括:运送运送托架的运送机构; 位置测量部,其测量所述基板与所述框架的位置; 等离子体处理部,其包括装载有运送载体的等离子体处理台和覆盖框架的盖和负载在等离子体处理台上的保持片的一部分,并具有用于使基板的一部分露出的窗口部 ; 以及控制部,其控制所述输送机构,使得所述输送载体基于所述基板到所述框架的位置信息而被载载在所述等离子体处理台上以满足所述窗口部和所述基板之间的位置关系。

    PLASMA PROCESSING APPARATUS
    3.
    发明申请
    PLASMA PROCESSING APPARATUS 审中-公开
    等离子体加工设备

    公开(公告)号:US20160118284A1

    公开(公告)日:2016-04-28

    申请号:US14919325

    申请日:2015-10-21

    CPC classification number: H01J37/32522 H01J37/321 H01J37/32119

    Abstract: A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a lower electrode which supports an object to be processed within the reaction chamber; a dielectric member which comprises a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; and a coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber. An electrode pattern and an insulation film which covers the electrode pattern are formed on the second surface of the dielectric member.

    Abstract translation: 等离子体处理装置包括:包含反应室的容器,能够减压的反应室内的气氛; 在反应室内支撑被处理物的下电极; 介电构件,其包括第一表面和与第一表面相对的第二表面,并且封闭容器的开口,使得第一表面与反应室的外部相对,并且第二表面与待处理物体相对; 以及与电介质构件的第一表面相对并且在反应室内产生等离子体的线圈。 覆盖电极图案的电极图案和绝缘膜形成在电介质构件的第二表面上。

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