公开(公告)号：US20180019099A1

公开(公告)日：2018-01-18

申请号：US15714231

申请日：2017-09-25

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tetsuhiro IWAI ,  Shogo OKITA

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/3211 ,  H01J37/32119

Abstract: A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a lower electrode which supports an object to be processed within the reaction chamber; a dielectric member which includes a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; and a coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber. The dielectric member has a groove formed in the first surface of the dielectric member, and at least a part of the coil is disposed in the groove.

公开(公告)号：US20180096824A1

公开(公告)日：2018-04-05

申请号：US15700600

申请日：2017-09-11

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tetsuhiro IWAI ,  Motoko HARA

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32495 ,  B08B7/0035 ,  H01J37/32183 ,  H01J37/32513 ,  H01J37/32715 ,  H01J2237/2007 ,  H01J2237/334

Abstract: A plasma processing apparatus comprises a base including an electrode body having a seat surface for setting a substrate held on a conveying carrier, and a platform for supporting the electrode body, and a lid configured to be moved up and down relative to the base, wherein the lid is moved down and appressed on the platform to define a closed space and a plasma is generated within the closed space to implement a plasma processing for the substrate set on the seat surface. The substrate is held on the holding sheet and set on the seat surface with the holding sheet therebetween. The plasma processing apparatus further comprises a guide being provided along a circumference of the electrode body for alignment of the frame, and a cover provided with the lid for covering at least the frame of the conveying carrier when the closed space is defined.

公开(公告)号：US20180061680A1

公开(公告)日：2018-03-01

申请号：US15804968

申请日：2017-11-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tetsuhiro IWAI

IPC: H01L21/67 ,  H01L21/78 ,  H01L21/687 ,  H01L21/683 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68785 ,  H01L21/78

Abstract: Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.

公开(公告)号：US20230167553A1

公开(公告)日：2023-06-01

申请号：US18057799

申请日：2022-11-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tetsuhiro IWAI

IPC: C23C16/513 ,  C23C16/458

CPC classification number: C23C16/513 ,  C23C16/4583

Abstract: A plasma processing apparatus 10 includes: a stage 11 for placing an object to be processed; a chamber 12 housing the stage 11, and having a first opening 12a at a top; a first dielectric member 13 forming a first space Si in the chamber 12 by closing the first opening 12a, and having a second opening 13a; a second dielectric member 15 forming a second space S2, the second space communicating with the first space S1 via the second opening 13a and extending more upward than the first dielectric member 13; and first and induction coils 16 and 17 for generating a plasma for processing the object, the former provided above the first dielectric member 13 so as to extend from a central side toward an outer peripheral side of the first dielectric member 13, and the latter provided so as to surround the second dielectric member 15.

公开(公告)号：US20160300739A1

公开(公告)日：2016-10-13

申请号：US15188630

申请日：2016-06-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tetsuhiro IWAI

IPC: H01L21/67 ,  H01L21/3065 ,  H01L21/687 ,  H01L21/683 ,  H01L21/78

CPC classification number: H01L21/67069 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68785 ,  H01L21/78

Abstract: Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.

Abstract translation: 公开了一种等离子体处理装置，其通过等离子体处理来提供待处理物体。 将作为被处理物体的晶片安装在平台上，该晶片被安装在由保持架框架保持的粘合片的上表面上。 在覆盖其中的级的真空室中，产生等离子体，通过该等离子体，安装在台上的晶片经受等离子体处理。 等离子体处理装置包括由电介质材料制成的盖构件。 在晶片上的等离子体处理期间，保持架被覆盖在放置在工作台上方的预定位置处的盖构件，同时，晶片从形成在盖构件的中心的开口露出。

公开(公告)号：US20160240352A1

公开(公告)日：2016-08-18

申请号：US14873255

申请日：2015-10-02

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tetsuhiro IWAI ,  Shogo OKITA ,  Syouzou WATANABE

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/50

CPC classification number: H01J37/3244 ,  C23C16/4586 ,  C23C16/466 ,  C23C16/50 ,  H01J37/321 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/67132 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68785

Abstract: A plasma processing apparatus performs plasma processing on a substrate held by a carrier. The carrier includes a frame disposed around the substrate and a holding sheet which holds the substrate and the frame. The plasma processing apparatus includes: a chamber; a stage which is disposed within the chamber and has an upper surface on which the carrier is mounted; a gas hole which is provided at a position of the upper surface opposing a bottom surface of the frame and through which cooling gas is supplied between the stage and the carrier; and a plasma exciting unit which generates plasma within the chamber.

Abstract translation: 等离子体处理装置对由载体保持的基板进行等离子体处理。 载体包括设置在基板周围的框架和保持基板和框架的保持板。 等离子体处理装置包括：室; 设置在所述室内并具有安装所述载体的上表面的台阶; 气体孔，其设置在与框架的底面相对的上表面的位置，冷却气体通过该气体供给到载台与载体之间; 以及在室内产生等离子体的等离子体激发单元。

公开(公告)号：US20160118284A1

公开(公告)日：2016-04-28

申请号：US14919325

申请日：2015-10-21

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tetsuhiro IWAI ,  Shogo OKITA ,  Syouzou WATANABE

IPC: H01L21/683

CPC classification number: H01J37/32522 ,  H01J37/321 ,  H01J37/32119

Abstract: A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a lower electrode which supports an object to be processed within the reaction chamber; a dielectric member which comprises a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; and a coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber. An electrode pattern and an insulation film which covers the electrode pattern are formed on the second surface of the dielectric member.

Abstract translation: 等离子体处理装置包括：包含反应室的容器，能够减压的反应室内的气氛; 在反应室内支撑被处理物的下电极; 介电构件，其包括第一表面和与第一表面相对的第二表面，并且封闭容器的开口，使得第一表面与反应室的外部相对，并且第二表面与待处理物体相对; 以及与电介质构件的第一表面相对并且在反应室内产生等离子体的线圈。 覆盖电极图案的电极图案和绝缘膜形成在电介质构件的第二表面上。

公开(公告)号：US20160118229A1

公开(公告)日：2016-04-28

申请号：US14865398

申请日：2015-09-25

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tetsuhiro IWAI ,  Shogo OKITA

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/3211 ,  H01J37/32119

Abstract: A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a lower electrode which supports an object to be processed within the reaction chamber; a dielectric member which includes a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; and a coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber. The dielectric member has a groove formed in the first surface of the dielectric member, and at least a part of the coil is disposed in the groove.

Abstract translation: 等离子体处理装置包括：包含反应室的容器，能够减压的反应室内的气氛; 在反应室内支撑被处理物的下电极; 电介质构件，其包括第一表面和与第一表面相对的第二表面，并且封闭容器的开口，使得第一表面与反应室的外部相对，并且第二表面与待处理物体相对; 以及与电介质构件的第一表面相对并且在反应室内产生等离子体的线圈。 电介质构件具有形成在电介质构件的第一表面中的沟槽，并且线圈的至少一部分设置在沟槽中。