Abstract:
In a method of fabricating element chips, a method of forming a mask pattern, and a method of processing a substrate, a process sequence is set such that developing in which the exposure-ended protection film is patterned is performed, after grinding in which the substrate is thinned by grinding a second surface opposite to a first surface to which a photosensitive protection film is pasted. Thereby, it is possible to perform the grinding for thinning in a state where the protection film is stable without being patterned, and to prevent the substrate or the protection film on which a mask pattern of the substrate is formed from being damaged at the time of the grinding, even in a case where a thin substrate of a wafer shape becomes a target.
Abstract:
A plasma processing method to a substrate includes a first step of mounting a transfer carrier holding the substrate on a stage which is cooled and provided within a processing chamber; a second step of relatively moving the stage and a cover provided above the stage to cover a holding sheet and an annular frame of the transfer carrier with the substrate exposed from a window part formed at the cover, a third step of carrying out plasma processing on the substrate, a fourth step of cooling the cover, and a fifth step of unloading the transfer carrier holding the substrate from the processing chamber.
Abstract:
A plasma processing apparatus includes a processing chamber, a plasma source that generates plasma within the processing chamber, a transfer carrier that has a holding sheet and a frame, the holding sheet holding a substrate, and the frame being attached to the holding sheet so as to surround the substrate, a stage that is provided within the processing chamber and has a gas supply hole formed in a mounting area of the stage for mounting the transfer carrier thereon, an electrostatic chucking part that is provided within the stage and electrostatically attracts the transfer carrier, and a gas supply part that supplies gas through the gas supply hole of the stage to assist separation of the transfer carrier from the stage.
Abstract:
A plasma processing apparatus that performs plasma processing to a substrate held on a transport carrier including a frame and a holding sheet that covers an opening of the frame includes: a transport mechanism that transports the transport carrier; a position measuring section that measures a position of the substrate to the frame; a plasma processing section that includes a plasma processing stage on which the transport carrier is loaded and a cover that covers the frame and a part of the holding sheet loaded on the plasma processing stage, and has a window section for exposing a part of the substrate; and a control section that controls the transport mechanism such that the transport carrier is loaded on the plasma processing stage to satisfy a positional relationship between the window section and the substrate based on the position information of the substrate to the frame.