METHOD OF FORMING MASK PATTERN, METHOD OF PROCESSING SUBSTRATE, AND METHOD OF FABRICATING ELEMENT CHIPS
    1.
    发明申请
    METHOD OF FORMING MASK PATTERN, METHOD OF PROCESSING SUBSTRATE, AND METHOD OF FABRICATING ELEMENT CHIPS 有权
    形成掩模图案的方法,加工基板的方法以及制造元件的方法

    公开(公告)号:US20170069522A1

    公开(公告)日:2017-03-09

    申请号:US15252899

    申请日:2016-08-31

    Abstract: In a method of fabricating element chips, a method of forming a mask pattern, and a method of processing a substrate, a process sequence is set such that developing in which the exposure-ended protection film is patterned is performed, after grinding in which the substrate is thinned by grinding a second surface opposite to a first surface to which a photosensitive protection film is pasted. Thereby, it is possible to perform the grinding for thinning in a state where the protection film is stable without being patterned, and to prevent the substrate or the protection film on which a mask pattern of the substrate is formed from being damaged at the time of the grinding, even in a case where a thin substrate of a wafer shape becomes a target.

    Abstract translation: 在制造元件芯片的方法中,形成掩模图案的方法和处理基板的方法,设置处理顺序,使得进行曝光结束保护膜的图案化的显影,在其中 通过研磨与粘贴有光敏保护膜的第一表面相对的第二表面来使基板变薄。 由此,可以在图案化保护膜稳定的状态下进行用于减薄的研磨,并且可以防止在基板或保护膜上形成有基板的掩模图案的基板或保护膜在 即使在晶片形状的薄基板成为目标的情况下也可进行研磨。

    PLASMA PROCESSING APPARATUS AND METHOD
    3.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHOD 有权
    等离子体加工设备和方法

    公开(公告)号:US20150340203A1

    公开(公告)日:2015-11-26

    申请号:US14716000

    申请日:2015-05-19

    Abstract: A plasma processing apparatus includes a processing chamber, a plasma source that generates plasma within the processing chamber, a transfer carrier that has a holding sheet and a frame, the holding sheet holding a substrate, and the frame being attached to the holding sheet so as to surround the substrate, a stage that is provided within the processing chamber and has a gas supply hole formed in a mounting area of the stage for mounting the transfer carrier thereon, an electrostatic chucking part that is provided within the stage and electrostatically attracts the transfer carrier, and a gas supply part that supplies gas through the gas supply hole of the stage to assist separation of the transfer carrier from the stage.

    Abstract translation: 等离子体处理装置包括处理室,在处理室内产生等离子体的等离子体源,具有保持片和框架的转印载体,保持片保持基板,框架安装在保持片上,以便 为了围绕基板,设置在处理室内并具有形成在载物台的安装区域中的气体供给孔的台架,设置在载物台内并静电吸引转印体的静电吸附部件 载体和气体供给部,其通过台的气体供给孔供给气体,以辅助将载体与载物台分离。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    4.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
    等离子体加工设备和等离子体处理方法

    公开(公告)号:US20160064188A1

    公开(公告)日:2016-03-03

    申请号:US14818415

    申请日:2015-08-05

    CPC classification number: H01J37/32715 H01J37/32366 H01J37/32733 H01L21/681

    Abstract: A plasma processing apparatus that performs plasma processing to a substrate held on a transport carrier including a frame and a holding sheet that covers an opening of the frame includes: a transport mechanism that transports the transport carrier; a position measuring section that measures a position of the substrate to the frame; a plasma processing section that includes a plasma processing stage on which the transport carrier is loaded and a cover that covers the frame and a part of the holding sheet loaded on the plasma processing stage, and has a window section for exposing a part of the substrate; and a control section that controls the transport mechanism such that the transport carrier is loaded on the plasma processing stage to satisfy a positional relationship between the window section and the substrate based on the position information of the substrate to the frame.

    Abstract translation: 对保持在包括框架的运送载体上的基板和覆盖框架的开口的保持片进行等离子体处理的等离子体处理装置包括:运送运送托架的运送机构; 位置测量部,其测量所述基板与所述框架的位置; 等离子体处理部,其包括装载有运送载体的等离子体处理台和覆盖框架的盖和负载在等离子体处理台上的保持片的一部分,并具有用于使基板的一部分露出的窗口部 ; 以及控制部,其控制所述输送机构,使得所述输送载体基于所述基板到所述框架的位置信息而被载载在所述等离子体处理台上以满足所述窗口部和所述基板之间的位置关系。

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