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公开(公告)号：US09318471B2
公开(公告)日：2016-04-19
申请号：US14920289
申请日：2015-10-22
Inventor： Tatsuya Kabe , Hideyuki Arai
IPC: H01L21/00 , H01L25/065 , H01L23/00 , H01L27/06 , H01L23/522 , H01L21/768 , H01L49/02
CPC classification number: H01L25/0657 , H01L21/76898 , H01L23/5223 , H01L23/5227 , H01L24/05 , H01L24/08 , H01L24/80 , H01L27/0688 , H01L28/20 , H01L28/40 , H01L2224/05568 , H01L2224/05571 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05684 , H01L2224/0603 , H01L2224/06051 , H01L2224/08145 , H01L2224/80097 , H01L2224/80201 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896 , H01L2224/9202 , H01L2225/06513 , H01L2225/06541 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01074 , H01L2924/0132 , H01L2924/05042 , H01L2924/0534 , H01L2924/05442 , H01L2924/0549 , H01L2924/00014 , H01L2924/00012
Abstract: A semiconductor device includes: a first substrate including a first surface layer that includes first and second electrodes; a second substrate including a second surface layer that includes third and fourth electrodes, and directly bonded to the first substrate such that the second surface layer is in contact with the first surface layer; and a functional film provided between the second and fourth electrodes. The first and third electrodes are bonded together so as to be in contact with each other, and the second electrode, the functional film, and the fourth electrode constitute a passive element.
Abstract translation: 一种半导体器件包括：第一衬底，包括包括第一和第二电极的第一表面层; 第二基板，包括包括第三和第四电极的第二表面层，并且直接接合到第一基板，使得第二表面层与第一表面层接触; 以及设置在第二和第四电极之间的功能膜。 第一和第三电极彼此接触结合在一起，并且第二电极，功能膜和第四电极构成无源元件。
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公开(公告)号：US10068876B2
公开(公告)日：2018-09-04
申请号：US15062115
申请日：2016-03-06
Inventor： Tatsuya Kabe , Hideyuki Arai
IPC: H01L25/065 , H01L23/00 , H01L25/00 , H01L23/528 , H01L23/58 , H01L25/07 , H01L25/18 , H01L23/532 , H01L21/768
Abstract: A semiconductor devise includes a first substrate and a second substrate which are bonded each other. A first substrate includes an insulating first surface film as an uppermost layer, a first electrode and an insulating second surface film respectively formed inside a plurality of openings in the first surface film, and a first seal ring. A second substrate includes an insulating third surface film as an uppermost layer, and a second electrode, an insulating fourth surface film respectively formed inside a plurality of openings in the third surface film, and a second seal ring. The first electrode and the second electrode are directly bonded together. The first surface film and the third surface film are directly bonded together. The second surface film and the fourth surface film are directly bonded together. A seal ring formed of the first seal ring, the second surface film, the fourth surface film, and the second seal ring is continuous between the first substrate and the second substrate.
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公开(公告)号：US11889215B2
公开(公告)日：2024-01-30
申请号：US17486495
申请日：2021-09-27
Inventor： Tatsuya Kabe , Hideyuki Arai , Hisashi Aikawa , Yuki Sugiura , Akito Inoue , Mitsuyoshi Mori , Kentaro Nakanishi , Yusuke Sakata
IPC: H04N25/75 , H01L27/146 , H04N25/766
CPC classification number: H04N25/75 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H04N25/766
Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.
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