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1.发明授权Process for the separation of a gaseous hydride or a mixture of gaseous hydrides with the aid of a membrane 失效借助于膜分离气态氢化物或气态氢化物的混合物的方法
公开(公告)号：US5503657A
公开(公告)日：1996-04-02
申请号：US305725
申请日：1994-09-14
CPC分类号： C01B6/34 , C01B33/046 , H01L21/02381 , H01L21/02532 , H01L21/02546 , H01L21/0262
摘要： The invention relates to a process for the separation of a gaseous hydride or a mixture of gaseous hydrides from a gaseous medium containing at least one gas from the group consisting of H.sub.2, Ar, He, according to which the gaseous medium is passed on to a membrane module so that the concentration of the hydride or of the mixture of hydrides obtained at the outlet of the module is higher than their initial concentration in the gaseous medium.
摘要翻译： 本发明涉及一种将气态氢化物或气态氢化物混合物从含有至少一种气体的气体介质中分离出来的方法，该气体介质包含H2，Ar，He，根据该气体介质将气态介质传送到 膜模块，使得在模块出口处获得的氢化物或氢化物混合物的浓度高于其在气体介质中的初始浓度。
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公开(公告)号：US5425857A
公开(公告)日：1995-06-20
申请号：US305835
申请日：1994-09-14
CPC分类号： C25B1/00
摘要： The invention relates to a process for the electrolytic generation of arsine from an electrochemical cell provided with a cathode supplied with H.sup.+ and AsO.sub.2.sup.- ions where two concurrent reactions take place producing arsine and gaseous hydrogen respectively, and an anode where a reaction producing H.sup.+ ions takes place, the ratio of the H.sup.+ /As concentrations at the cathode being controlled and kept constant.
摘要翻译： 本发明涉及一种从电化学电池电解生成胂的方法，该电化学电池具有提供有H +和AsO 2 - 离子的阴极，其中分别产生两个同时发生的反应产生胂和气态氢，以及产生H +离子的反应的阳极 在阴极处的H + / As浓度的比例被控制并保持恒定。
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3.发明授权Process for producing a silicon oxide deposit on the surface of a metallic or metallized polymer substrate using corona discharge at pressures up to approximately atmospheric 失效在金属或金属化的聚合物基材的表面上使用电晕放电产生氧化硅沉积物的方法，该压力高达大气压
公开(公告)号：US5523124A
公开(公告)日：1996-06-04
申请号：US402330
申请日：1995-03-10
申请人： Frank Slootman , Pascal Bouard
发明人： Frank Slootman , Pascal Bouard
IPC分类号： B32B9/00 , C23C16/02 , C23C16/18 , C23C16/24 , C23C16/40 , C23C16/44 , C23C16/503 , B32B21/06
CPC分类号： C23C16/24 , C23C16/0245 , C23C16/402 , C23C16/503
摘要： A process for producing a silicon oxide deposit at the surface of a metallic substrate comprising the following steps performed either concomitantly or successively: (1) treating the surface of the substrate with a corona discharge; and (2) exposing the surface to an atmosphere containing a silicon compound in the gaseous state. Both steps (1) and (2) are conducted at a pressure greater than 10,000 Pa. This process can be used to provide anti-corrosion treatment to a metallic substrate or to a metallized polymeric support.
摘要翻译： 一种在金属基材的表面上生产氧化硅沉积物的方法，包括以下步骤：或者连续地进行：（1）用电晕放电处理基材的表面; 和（2）将表面暴露于含有气态的硅化合物的气氛中。 步骤（1）和（2）在大于10,000Pa的压力下进行。该方法可用于向金属基材或金属化聚合物载体提供防腐蚀处理。
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公开(公告)号：US5952108A
公开(公告)日：1999-09-14
申请号：US939079
申请日：1997-09-26
IPC分类号： C01B33/113 , B01J19/08 , C23C16/40 , C23C16/455 , C23C16/54 , B32B9/06
CPC分类号： C23C16/402 , C23C16/455 , C23C16/545 , Y10S422/907 , Y10T428/265 , Y10T428/266 , Y10T428/31507 , Y10T428/31721 , Y10T428/31935 , Y10T428/31938
摘要： A product substrate coated with a uniform deposit of silicon oxide created by subjecting the substrate to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.
摘要翻译： 在含有硅烷和氧化性气体的受控气氛的存在下，通过使基板经受电介质阻挡层的放电而产生均匀沉积的氧化硅的产品基板，该气氛处于高于10,000Pa的压力， 并且其中气氛保持在产生放电的区域内的电极的紧邻附近，并且进一步防止了在该区域中形成部分大气的那些以外的任何夹带氧。
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5.发明授权Device for creating a deposit of silicon oxide on a traveling solid substrate 失效用于在移动的固体基底上产生氧化硅沉积物的装置
公开(公告)号：US5753193A
公开(公告)日：1998-05-19
申请号：US449894
申请日：1995-05-23
IPC分类号： C01B33/113 , B01J19/08 , C23C16/40 , C23C16/455 , C23C16/54
CPC分类号： C23C16/402 , C23C16/455 , C23C16/545 , Y10S422/907 , Y10T428/265 , Y10T428/266 , Y10T428/31507 , Y10T428/31721 , Y10T428/31935 , Y10T428/31938
摘要： A device for creating a deposit of silicon oxide on a traveling solid substrate, wherein the substrate is subjected to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.
摘要翻译： 一种用于在行进固体基板上产生氧化硅沉积物的装置，其中在含有硅烷和氧化性气体的受控气氛的情况下，使基板经受电介质阻挡层的放电，气氛处于更高的压力 超过10,000Pa，并且其中气氛保持在产生放电的区域中的电极的紧邻附近，并且进一步防止了除了形成该区域中的一部分气氛的氧之外的任何夹带氧。
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6.发明授权Process for creating a deposit of silicon oxide on a traveling solid substrate 失效在行进固体基材上产生氧化硅沉积物的方法
公开(公告)号：US5576076A
公开(公告)日：1996-11-19
申请号：US234462
申请日：1994-04-28
IPC分类号： C01B33/113 , B01J19/08 , C23C16/40 , C23C16/455 , C23C16/54 , B05D3/06
CPC分类号： C23C16/402 , C23C16/455 , C23C16/545 , Y10S422/907 , Y10T428/265 , Y10T428/266 , Y10T428/31507 , Y10T428/31721 , Y10T428/31935 , Y10T428/31938
摘要： According to the process the substrate (2) is subjected to an electrical discharge with a dielectric barrier, for example a discharge in the presence of an atmosphere containing a silane, an oxidizing gas, NO, N.sub.2 O, CO.sub.2 or O.sub.2, in particular, and a neutral carrier gas such as nitrogen or argon. A controlled atmosphere containing the silane and the oxidizing gas is maintained in the immediate vicinity of the electrode, around the electrode (6) employed for the electrical discharge, while avoiding the process being perturbed by atmospheric air entrained, for example, by the substrate (2) as it travels (3).
摘要翻译： 根据该方法，特别是使衬底（2）进行具有介电阻挡层的放电，例如在含有硅烷，氧化气体，NO，N 2 O，CO 2或O 2的气氛存在下的放电，以及 中性载气如氮气或氩气。 包含硅烷和氧化性气体的受控气氛保持在电极的周围，围绕用于放电的电极（6），同时避免该过程受到例如由基底夹带的大气空气的干扰（ 2）旅行时（3）。
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7.发明授权
公开(公告)号：US5527629A
公开(公告)日：1996-06-18
申请号：US248560
申请日：1994-05-24
IPC分类号： C23C16/00 , C23C16/02 , C23C16/40 , C23C16/503 , B32B9/00
CPC分类号： C08J7/123 , C23C16/0245 , C23C16/402 , C23C16/503 , C08J2323/06 , C08J2327/06 , C08J2367/02 , C08J2369/00 , C08J2377/00
摘要： The invention concerns a process for depositing a thin layer of silicon oxide bonded to a substrate of a polymeric material comprising, concomitantly or consecutively (1) subjecting a surface of the substrate to an electrical discharge with dielectric barrier and (2) exposing said surface of the substrate to an atmosphere containing a silane, thus forming a deposit of silicon oxide bonded to said surface of the substrate Application to the production of sheets or films useful for example as food wrapping.
摘要翻译： 本发明涉及一种用于沉积结合到聚合物材料的基底上的氧化硅薄层的方法，该方法包括：伴随或连续地（1）使基底的表面经历电介质屏障的放电，和（2） 将基底转移到含有硅烷的气氛中，从而形成结合到基底的所述表面的氧化硅沉积物，以生产可用作例如食品包装的片材或薄膜。
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