摘要:
Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates.
摘要:
Novel aqueous, acid etch solutions comprising a fluorinated surfactant are provided. The etch solutions are used with a wide variety of substrates, for example, in the etching of silicon oxide-containing substrates.
摘要:
The present invention provides for the use of bis(perfluoroalkanesulfonyl)imide and its salts as surfactants or additives applications having an extreme environment.
摘要:
Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates.
摘要:
A coatable composition that comprises water, a film-forming organic polymer, and a leveling agent comprising an anionic species represented by the formula wherein Rf represents a perfluoroalkyl group having from 4 to 6 carbon atoms, and R represents H or an alkyl group having from 1 to 18 carbon atoms.
摘要:
Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates.
摘要:
Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates.
摘要:
The present invention provides for the use of bis(perfluoroalkanesulfonyl)imide and its salts as surfactants or additives applications having an extreme environment.
摘要:
Novel aqueous, acid etch solutions comprising a fluorinated surfactant are provided. The etch solutions are used with a wide variety of substrates, for example, in the etching of silicon oxide-containing substrates.