摘要:
A photovoltaic cell includes a p-type copper-indium-gallium-selenide absorber layer, where a content of Cu, In, and Ga in a first portion of the p-type copper-indium-gallium-selenide absorber layer satisfies the equation Cu/(In+Ga)≦0.3, and where the content is measured in atomic percent.
摘要:
A method of making a photovoltaic device includes forming a compound semiconductor layer including copper, indium, gallium, selenium and sulfur by reactive sputtering at least one target including copper, indium, gallium and a sulfur compound in an atmosphere including selenium.
摘要:
A photovoltaic device includes a substrate, a first electrode layer over the substrate, a first compound semiconductor layer including copper, indium, gallium and selenium over the first electrode layer, a second compound semiconductor layer including copper, indium, and sulfur on the first compound semiconductor layer, and a second electrode layer over the second compound semiconductor layer.
摘要:
An emergency power off system is provided including an emergency power off button, a proximity sensor, and alarm connected to the proximity sensor, wherein the proximity sensor is configured to detect an object within a predetermined distance from the power off button, and further wherein the proximity sensor is configured to activate the alarm when an object is within a predetermined distance from the power off button.
摘要:
An emergency power off system is provided including an emergency power off button, a proximity sensor, and alarm connected to the proximity sensor, wherein the proximity sensor is configured to detect an object within a predetermined distance from the power off button, and further wherein the proximity sensor is configured to activate the alarm when an object is within a predetermined distance from the power off button.
摘要:
A photovoltaic device including a substrate, a first electrode layer over the substrate and a resistive p-type semiconductor layer over the first electrode layer. The device also includes a p-type absorber layer over the resistive p-type semiconductor layer, an n-type semiconductor layer over the p-type absorber layer and a second electrode layer over the n-type semiconductor layer. Additionally, a resistivity of the resistive p-type semiconductor layer is greater than a resistivity of the p-type absorber layer.
摘要:
A photovoltaic module assembly includes a photovoltaic module which is capable of wirelessly coupling to an energy-receiving device in order to transfer energy.