EMERGENCY POWER-OFF BUTTON WITH PROXIMITY ALARM
    7.
    发明申请
    EMERGENCY POWER-OFF BUTTON WITH PROXIMITY ALARM 有权
    紧急停电按钮,具有临时报警功能

    公开(公告)号:US20120319858A1

    公开(公告)日:2012-12-20

    申请号:US13159570

    申请日:2011-06-14

    申请人: Robert Tas

    发明人: Robert Tas

    IPC分类号: G08B21/00

    CPC分类号: G08B25/12 G08B21/22

    摘要: An emergency power off system is provided including an emergency power off button, a proximity sensor, and alarm connected to the proximity sensor, wherein the proximity sensor is configured to detect an object within a predetermined distance from the power off button, and further wherein the proximity sensor is configured to activate the alarm when an object is within a predetermined distance from the power off button.

    摘要翻译: 提供了一种应急电源关闭系统,包括紧急电源关闭按钮,接近传感器和连接到接近传感器的报警器,其中接近传感器被配置为检测距电源关闭按钮预定距离内的物体,并且其中, 接近传感器被配置为当物体处于距离电源关闭按钮的预定距离内时激活警报。

    Emergency power-off button with proximity alarm
    8.
    发明授权
    Emergency power-off button with proximity alarm 有权
    紧急关机按钮带有接近报警

    公开(公告)号:US08710999B2

    公开(公告)日:2014-04-29

    申请号:US13159570

    申请日:2011-06-14

    申请人: Robert Tas

    发明人: Robert Tas

    IPC分类号: G08B21/00

    CPC分类号: G08B25/12 G08B21/22

    摘要: An emergency power off system is provided including an emergency power off button, a proximity sensor, and alarm connected to the proximity sensor, wherein the proximity sensor is configured to detect an object within a predetermined distance from the power off button, and further wherein the proximity sensor is configured to activate the alarm when an object is within a predetermined distance from the power off button.

    摘要翻译: 提供了一种应急电源关闭系统,包括紧急电源关闭按钮,接近传感器和连接到接近传感器的报警器,其中接近传感器被配置为检测距电源关闭按钮预定距离内的物体,并且其中, 接近传感器被配置为当物体处于距离电源关闭按钮的预定距离内时激活警报。

    PHOTOVOLTAIC DEVICE WITH RESISTIVE CIGS LAYER AT THE BACK CONTACT
    9.
    发明申请
    PHOTOVOLTAIC DEVICE WITH RESISTIVE CIGS LAYER AT THE BACK CONTACT 审中-公开
    背面电容式电容器的光电器件

    公开(公告)号:US20130000702A1

    公开(公告)日:2013-01-03

    申请号:US13173407

    申请日:2011-06-30

    IPC分类号: H01L31/02 H01L31/18

    摘要: A photovoltaic device including a substrate, a first electrode layer over the substrate and a resistive p-type semiconductor layer over the first electrode layer. The device also includes a p-type absorber layer over the resistive p-type semiconductor layer, an n-type semiconductor layer over the p-type absorber layer and a second electrode layer over the n-type semiconductor layer. Additionally, a resistivity of the resistive p-type semiconductor layer is greater than a resistivity of the p-type absorber layer.

    摘要翻译: 一种光电器件,包括衬底,在衬底上的第一电极层和位于第一电极层上的电阻p型半导体层。 该器件还包括电阻p型半导体层上的p型吸收层,p型吸收层上方的n型半导体层和n型半导体层上的第二电极层。 此外,电阻p型半导体层的电阻率大于p型吸收层的电阻率。