Direct cooling pallet tray for temperature stability for deep ion mill etch process
    2.
    发明授权
    Direct cooling pallet tray for temperature stability for deep ion mill etch process 有权
    直接冷却托盘托盘用于深度离子磨蚀刻蚀工艺的温度稳定性

    公开(公告)号:US07296420B2

    公开(公告)日:2007-11-20

    申请号:US11001795

    申请日:2004-12-02

    IPC分类号: F25D25/00 F25D17/06 F25D23/12

    CPC分类号: H01L21/67109 H01L21/67333

    摘要: Embodiments of the present invention are directed to a pallet assembly which facilitates direct cooling of the wafer carrier. In one embodiment, the pallet assembly comprises a frame which holds at least one carrier of a component. The pallet assembly further comprises a tray which is operable for being mechanically coupled with the frame. The tray comprises at least one discreet region which corresponds with the carrier when the tray is coupled with the frame. In embodiments of the present invention, the discreet region comprises at least one hole extending through the tray for permitting a coolant medium to dissipate heat from the carrier.

    摘要翻译: 本发明的实施例涉及一种有助于晶片载体的直接冷却的托盘组件。 在一个实施例中,托盘组件包括保持部件的至少一个托架的框架。 托盘组件还包括可操作以与框架机械联接的托盘。 当托盘与框架联接时,该托盘包括至少一个对应于托架的离散区域。 在本发明的实施例中,离散区域包括延伸穿过托盘的至少一个孔,用于允许冷却剂介质从载体中散发热量。

    Direct cooling pallet tray for temperature stability for deep ion mill etch process
    4.
    发明申请
    Direct cooling pallet tray for temperature stability for deep ion mill etch process 有权
    直接冷却托盘托盘用于深度离子磨蚀刻蚀工艺的温度稳定性

    公开(公告)号:US20060117762A1

    公开(公告)日:2006-06-08

    申请号:US11001795

    申请日:2004-12-02

    CPC分类号: H01L21/67109 H01L21/67333

    摘要: Embodiments of the present invention are directed to a pallet assembly which facilitates direct cooling of the wafer carrier. In one embodiment, the pallet assembly comprises a frame which holds at least one carrier of a component. The pallet assembly further comprises a tray which is operable for being mechanically coupled with the frame. The tray comprises at least one discreet region which corresponds with the carrier when the tray is coupled with the frame. In embodiments of the present invention, the discreet region comprises at least one hole extending through the tray for permitting a coolant medium to dissipate heat from the carrier.

    摘要翻译: 本发明的实施例涉及一种有助于晶片载体的直接冷却的托盘组件。 在一个实施例中,托盘组件包括保持部件的至少一个托架的框架。 托盘组件还包括可操作以与框架机械联接的托盘。 当托盘与框架联接时,该托盘包括至少一个对应于托架的离散区域。 在本发明的实施例中,离散区域包括延伸穿过托盘的至少一个孔,用于允许冷却剂介质从载体中散发热量。

    Method of forming uniform features using photoresist
    5.
    发明授权
    Method of forming uniform features using photoresist 失效
    使用光刻胶形成均匀特征的方法

    公开(公告)号:US07560225B2

    公开(公告)日:2009-07-14

    申请号:US10448501

    申请日:2003-05-29

    IPC分类号: G03F7/40 B44C1/22

    摘要: A process for ion milling using photoresist as a mask is described. In a preferred embodiment the invention is used in the fabricating air-bearing features on sliders for use in magnetic storage devices. According to the invention the photoresist (liquid or dry) is applied, developed and removed as in the prior art which includes baking steps. The embodiment of the invention includes an additional baking step beyond whatever baking steps are used in the photolithography process. The additional baking step is preferably performed immediately prior to ion milling. The additional baking step according to the invention yields increased uniformity of the depth of the ion milling which is believed to result from reduction of volatile material such as water in the photoresist. When the invention is used as part of the manufacturing process for ion milling the air-bearing features on a slider, the features are more uniform which improves the overall quality and performance.

    摘要翻译: 描述使用光致抗蚀剂作为掩模的离子铣削的方法。 在优选实施例中,本发明用于制造用于磁存储装置的滑块上的空气轴承特征。 根据本发明,如在包括烘烤步骤的现有技术中,应用,显影和去除光致抗蚀剂(液体或干燥)。 本发明的实施例包括除了在光刻工艺中使用的任何烘烤步骤之外的额外的烘烤步骤。 额外的烘烤步骤优选在离子研磨之前立即进行。 根据本发明的另外的烘烤步骤产生离子研磨深度的均匀性,这被认为是通过光致抗蚀剂中的挥发性物质例如水的还原引起的。 当将本发明用作离子铣削制造过程的一部分时,滑块上的空气轴承特征更加均匀,这提高了整体的质量和性能。

    Method of etching ceramics of alumina/TiC with high density plasma
    6.
    发明授权
    Method of etching ceramics of alumina/TiC with high density plasma 失效
    用高密度等离子体蚀刻氧化铝/ TiC陶瓷的方法

    公开(公告)号:US6027660A

    公开(公告)日:2000-02-22

    申请号:US75625

    申请日:1998-05-11

    摘要: A method of patterning a ceramic slider by plasma etching is disclosed. The ceramic slider contains alumina and titanium carbide. The method includes the steps of forming an etch pattern by depositing and developing a photoresist on the ceramic slider, and reactive ion etching a first surface on the ceramic slider using an etchant gas. The etchant gas generally includes argon, and a fluorine containing gas. The power source density, during etching ranges from about 0.5 W/(cm.sup.2) to 8 W/(cm.sup.2). Another aspect of the invention is a ceramic slider resulting from the method of the invention having a smoothness ranging from about 20 to 300 .ANG. as measured by atomic force microscopy.

    摘要翻译: 公开了通过等离子体蚀刻图案化陶瓷滑块的方法。 陶瓷滑块包含氧化铝和碳化钛。 该方法包括以下步骤:通过在陶瓷滑块上沉积和显影光致抗蚀剂来形成蚀刻图案,并且使用蚀刻剂气体对陶瓷滑块上的第一表面进行反应离子蚀刻。 蚀刻剂气体通常包括氩气和含氟气体。 在蚀刻期间的电源密度为约0.5W /(cm 2)至8W /(cm 2)。 本发明的另一方面是由本发明的方法获得的陶瓷滑块,其具有通过原子力显微镜测量的约20至300埃的平滑度。

    Method and apparatus for achieving etch rate uniformity in a reactive
ion etcher
    8.
    发明授权
    Method and apparatus for achieving etch rate uniformity in a reactive ion etcher 失效
    用于实现反应离子蚀刻器中的蚀刻速率均匀性的方法和装置

    公开(公告)号:US6132632A

    公开(公告)日:2000-10-17

    申请号:US927186

    申请日:1997-09-11

    IPC分类号: H01J37/32 C23C16/00 B44C1/22

    CPC分类号: H01J37/32623 H01J37/3266

    摘要: A method and apparatus for achieving etch rate uniformity in a reactive ion etcher. The reactive ion etcher generates a plasma within a vacuum chamber for etching a substrate disposed at a cathode of a reactor can within the chamber wherein the plasma emanates from a top plate of the reactor can, and is influenced by localized magnetic fields for locally controlling etch rates across the cathode to produce a uniform etch rate distribution across the cathode as a result of the localized magnetic field. The magnet array may be disposed between the top plate and the vacuum chamber for providing the localized magnetic fields. The magnet array includes a plurality of individual magnets and a grid plate for holding the individual magnets in position.

    摘要翻译: 用于实现反应离子蚀刻器中的蚀刻速率均匀性的方法和装置。 反应离子蚀刻器在真空室内产生等离子体,用于蚀刻设置在室内的反应器罐的阴极处的衬底,其中等离子体从反应器的顶板发出的等离子体可以被局部磁场影响,用于局部控制蚀刻 由于局部磁场,整个阴极的速率跨越阴极产生均匀的蚀刻速率分布。 磁体阵列可以设置在顶板和真空室之间,用于提供局部磁场。 磁体阵列包括多个独立的磁体和用于将各个磁体保持就位的格板。

    Baby bottle with a spare nipple storage assembly
    9.
    发明授权
    Baby bottle with a spare nipple storage assembly 失效
    婴儿奶瓶带有备用奶嘴存放组件

    公开(公告)号:US08051996B1

    公开(公告)日:2011-11-08

    申请号:US11387130

    申请日:2006-03-23

    IPC分类号: A61J9/00 A61J11/00 A61J11/04

    CPC分类号: A61J9/008 A61J11/04

    摘要: A baby bottle storage assembly includes a bottle that has a cylindrical body, a chamber formed therein, and has open top and closed bottom ends. First and second coextensive protective caps are conjoined to the top and bottom ends. The second protective cap has a cavity positioned adjacent to the body's bottom end, defining a storage chamber when the second protective cap is secured to the bottom end. A first discharge nozzle is intercalated between the first protective cap and the body's top end, and has a nipple protruding outwardly from the first protective cap. Spare discharge nozzles are housed within the storage chamber and are intercalated between the second protective cap and the body's bottom end such that the spare discharge nozzles are isolated from ambient surroundings. The first and spare discharge nozzles are formed from resilient rubber material.

    摘要翻译: 婴儿奶瓶存储组件包括具有圆柱形主体的瓶子,形成在其中的腔室,并且具有敞开的顶部和封闭的底端。 第一和第二共同保护帽结合到顶端和底端。 第二保护盖具有邻近本体的底端定位的空腔,当第二保护盖固定到底端时限定存储室。 第一排放喷嘴插入在第一保护盖和主体的顶端之间,并且具有从第一保护盖向外突出的接头。 备用排放喷嘴容纳在储存室内,并插入在第二保护盖和主体的底端之间,使得备用排放喷嘴与环境环境隔离。 第一和备用排放喷嘴由弹性橡胶材料形成。

    Apparatus for achieving etch rate uniformity
    10.
    发明授权
    Apparatus for achieving etch rate uniformity 失效
    用于实现蚀刻速率均匀性的装置

    公开(公告)号:US6051099A

    公开(公告)日:2000-04-18

    申请号:US949720

    申请日:1997-10-14

    IPC分类号: H01J37/32 H05H1/00

    CPC分类号: H01J37/32633

    摘要: A can for use in an etching system including a continuous conductive wall with a first opening to be placed adjacent the reactor upper electrode and a second opening to be placed adjacent the reactor lower electrode. Preferably, the conductive wall is a dual wall further including an inner wall and an outer wall, the inner and outer wall separated by one or more openings configured normal to the height of the continuous wall, the openings allowing for the flow of coolant through the wall.

    摘要翻译: 一种用于蚀刻系统的罐,包括具有邻近反应器上电极放置的第一开口的连续导电壁和邻近反应器下电极放置的第二开口。 优选地,导电壁是还包括内壁和外壁的双壁,内壁和外壁由一个或多个开口构成,垂直于连续壁的高度,开口允许冷却剂流过 壁。