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    PROCESS FOR SELECTIVE MASKING OF III-N LAYERS AND FOR THE PREPARATION OF FREE-STANDING III-N LAYERS OR OF DEVICES, AND PRODUCTS OBTAINED THEREBY
    1.
    发明申请
    PROCESS FOR SELECTIVE MASKING OF III-N LAYERS AND FOR THE PREPARATION OF FREE-STANDING III-N LAYERS OR OF DEVICES, AND PRODUCTS OBTAINED THEREBY 有权
    III-N层的选择性掩蔽和自由置换III-N层或器件的制备方法以及获得的产品

    公开(公告)号：US20070163490A1

    公开(公告)日：2007-07-19

    申请号：US11614508

    申请日：2006-12-21

    申请人： Frank Habel ,  Ferdinand Scholz ,  Barbara Neubert ,  Peter Bruckner ,  Thomas Wunderer

    发明人： Frank Habel ,  Ferdinand Scholz ,  Barbara Neubert ,  Peter Bruckner ,  Thomas Wunderer

    IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12

    CPC分类号： H01L21/0265 ,  C30B25/04 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

    摘要： In a process for forming a mask material on a III-N layer, wherein III denotes an element of the group III of the Periodic Table of Elements, selected from Al, Ga and In, a III-N layer having a surface is provided which comprises more than one facet. Mask material is selectively deposited only on one or multiple, but not on all facets. The deposition of mask material may be particularly carried out during epitaxial growth of a III-N layer under growth conditions, by which (i) growth of at least a further III-N layer selectively on a first type or a first group of facet(s) and (ii) a deposition of mask material selectively on a second type or a second group of facet(s) proceed simultaneously. By the process according to the invention, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.

    摘要翻译： 在III-N层上形成掩模材料的方法中，III表示选自Al，Ga和In的元素周期表第III族的元素，提供了具有表面的III-N层， 包括多个方面。 掩模材料仅选择性地沉积在一个或多个上，但不在所有小平面上。 掩模材料的沉积可以在生长条件下在III-N层的外延生长期间特别地进行，其中（i）在第一类型或第一组面上选择性地生长至少另外的III-N层（ s）和（ii）选择性地在第二类型或第二组面上沉积掩模材料同时进行。 通过根据本发明的方法，可以生产独立的厚III-N层。 此外，可以制造具有特殊结构和层的半导体器件或部件。

    Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby
    3.
    发明授权
    Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby 有权
    选择性掩蔽III-N层和制备独立III-N层或器件的方法以及由此得到的产物

    公开(公告)号：US07727332B2

    公开(公告)日：2010-06-01

    申请号：US11614508

    申请日：2006-12-21

    申请人： Frank Habel ,  Ferdinand Scholz ,  Barbara Neubert ,  Peter Brückner ,  Thomas Wunderer

    发明人： Frank Habel ,  Ferdinand Scholz ,  Barbara Neubert ,  Peter Brückner ,  Thomas Wunderer

    IPC分类号： C30B28/12 ,  C30B25/00

    CPC分类号： H01L21/0265 ,  C30B25/04 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

    摘要： In a process for forming a mask material on a III-N layer, wherein III denotes an element of the group III of the Periodic Table of Elements, selected from Al, Ga and In, a III-N layer having a surface is provided which comprises more than one facet. Mask material is selectively deposited only on one or multiple, but not on all facets. The deposition of mask material may be particularly carried out during epitaxial growth of a III-N layer under growth conditions, by which (i) growth of at least a further III-N layer selectively on a first type or a first group of facet(s) and (ii) a deposition of mask material selectively on a second type or a second group of facet(s) proceed simultaneously. By the process according to the invention, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.

    摘要翻译： 在III-N层上形成掩模材料的方法中，III表示选自Al，Ga和In的元素周期表第III族的元素，提供了具有表面的III-N层， 包括多个方面。 掩模材料仅选择性地沉积在一个或多个上，但不在所有小平面上。 掩模材料的沉积可以在生长条件下在III-N层的外延生长期间特别地进行，其中（i）在第一类型或第一组面上选择性地生长至少另外的III-N层（ s）和（ii）选择性地在第二类型或第二组面上沉积掩模材料同时进行。 通过根据本发明的方法，可以生产独立的厚III-N层。 此外，可以制造具有特殊结构和层的半导体器件或部件。