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公开(公告)号：US07445814B2
公开(公告)日：2008-11-04
申请号：US10691199
申请日：2003-10-22
IPC分类号： C23C10/00
CPC分类号： C23C14/5806 , C23C14/06 , C23C26/00 , H01M4/8621 , H01M4/8885 , H01M4/9016 , H01M4/9066 , H01M2008/1293
摘要： A method for making a porous film includes the steps of forming a cermet film and/or a ceramic film by depositing or co-depositing suitable materials on a substrate, and causing metal in the material(s) to reduce and/or to diffuse to the cermet film surface and/or the ceramic film surface to render the porous film.
摘要翻译： 制造多孔膜的方法包括以下步骤：通过在衬底上沉积或共沉积合适的材料形成金属陶瓷膜和/或陶瓷膜，并使材料中的金属减少和/或扩散到 金属陶瓷膜表面和/或陶瓷膜表面以形成多孔膜。
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公开(公告)号：US08143128B2
公开(公告)日：2012-03-27
申请号：US12833354
申请日：2010-07-09
IPC分类号： H01L21/471
CPC分类号： H01L29/4908 , Y10T428/24942
摘要： A method forms a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects.
摘要翻译： 一种方法形成具有第一缺陷浓度的第一无机介电层和与第一层接触并具有第二较小浓度缺陷的第二无机介电层。
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公开(公告)号：US20090032890A1
公开(公告)日：2009-02-05
申请号：US11830533
申请日：2007-07-30
CPC分类号： H01L29/4908 , Y10T428/24942
摘要： An apparatus and method relating to a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects are disclosed.
摘要翻译： 公开了一种涉及具有第一缺陷浓度的第一无机介电层和与第一层接触并具有第二较小浓度缺陷的第二无机介电层的装置和方法。
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公开(公告)号：US08143616B2
公开(公告)日：2012-03-27
申请号：US12426955
申请日：2009-04-20
申请人： Gregory S. Herman , Peter Mardilovich , Chinmay Betrabet , Chih-hung Chang , Yu-jen Chang , Doo-Hyoung Lee , Mark W. Hoskins
发明人： Gregory S. Herman , Peter Mardilovich , Chinmay Betrabet , Chih-hung Chang , Yu-jen Chang , Doo-Hyoung Lee , Mark W. Hoskins
CPC分类号： H01L51/0022 , B41J11/002 , C23C18/04 , C23C18/06 , C23C18/14 , C30B7/005 , H01L21/67011 , Y10S977/938
摘要： A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface.
摘要翻译： 结构包括表面和表面上的非平衡二维半导体微结构。
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公开(公告)号：US07768080B2
公开(公告)日：2010-08-03
申请号：US11830533
申请日：2007-07-30
IPC分类号： H01L29/78
CPC分类号： H01L29/4908 , Y10T428/24942
摘要： An apparatus and method relating to a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects are disclosed.
摘要翻译： 公开了一种涉及具有第一缺陷浓度的第一无机介电层和与第一层接触并具有第二较小浓度缺陷的第二无机介电层的装置和方法。
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公开(公告)号：US07547647B2
公开(公告)日：2009-06-16
申请号：US10885223
申请日：2004-07-06
申请人： Gregory S. Herman , Peter Mardilovich , Chinmay Betrabet , Chih-hung Chang , Yu-jen Chang , Doo-Hyoung Lee , Mark W. Hoskins
发明人： Gregory S. Herman , Peter Mardilovich , Chinmay Betrabet , Chih-hung Chang , Yu-jen Chang , Doo-Hyoung Lee , Mark W. Hoskins
IPC分类号： H01L21/00
CPC分类号： H01L51/0022 , B41J11/002 , C23C18/04 , C23C18/06 , C23C18/14 , C30B7/005 , H01L21/67011 , Y10S977/938
摘要： A method for making a structure includes depositing a solution upon a surface and irradiating the solution with microwaves to crystallize solute of the solution on the surface.
摘要翻译： 制造结构的方法包括将溶液沉积在表面上并用微波照射溶液以使溶液的溶质在表面上结晶。
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公开(公告)号：US07773365B2
公开(公告)日：2010-08-10
申请号：US10837411
申请日：2004-04-30
CPC分类号： H01B3/12 , C01G1/00 , C01G27/00 , C01G27/06 , C01P2006/40 , H01L21/28194 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L29/517
摘要： One embodiment of a dielectric material may include a metal containing cation and a polyatomic anion.
摘要翻译： 介电材料的一个实施例可以包括含金属的阳离子和多原子阴离子。
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公开(公告)号：US20090200541A1
公开(公告)日：2009-08-13
申请号：US12426955
申请日：2009-04-20
申请人： Gregory S. Herman , Peter Mardilovich , Chinmay Betrabet , Chih-Chung Chang , Yu-jen Chang , Doo-hyoung Lee , Mark W. Hoskins
发明人： Gregory S. Herman , Peter Mardilovich , Chinmay Betrabet , Chih-Chung Chang , Yu-jen Chang , Doo-hyoung Lee , Mark W. Hoskins
IPC分类号： H01L29/66
CPC分类号： H01L51/0022 , B41J11/002 , C23C18/04 , C23C18/06 , C23C18/14 , C30B7/005 , H01L21/67011 , Y10S977/938
摘要： A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface.
摘要翻译： 结构包括表面和表面上的非平衡二维半导体微结构。
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公开(公告)号：US20100279514A1
公开(公告)日：2010-11-04
申请号：US12833354
申请日：2010-07-09
IPC分类号： H01L21/31
CPC分类号： H01L29/4908 , Y10T428/24942
摘要： A method forms a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects.
摘要翻译： 一种方法形成具有第一缺陷浓度的第一无机介电层和与第一层接触并具有第二较小浓度缺陷的第二无机介电层。
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公开(公告)号：US07045244B2
公开(公告)日：2006-05-16
申请号：US10166999
申请日：2002-06-10
申请人： David Champion , Gregory S. Herman , James O'Neil
发明人： David Champion , Gregory S. Herman , James O'Neil
CPC分类号： H01M8/1246 , Y02E60/525 , Y02P70/56
摘要： The invention is a fuel cell comprising a cathode film having a side surface, an anode film having a side surface and an electrolyte film disposed between the cathode film and the anode film and having a side surface. The anode, cathode and electrolyte side surfaces are coplanar. Protons generated at the anode diffuse along the anode side surface, the electrolyte side surface or both towards the cathode side surface. Oxygen ions generated at the cathode diffuse along the cathode side surface, the electrolyte side surface, or both towards the anode side surface.
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