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    Thin film transistor and manufacturing method thereof
    1.
    发明授权
    Thin film transistor and manufacturing method thereof 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US08871577B2

    公开(公告)日：2014-10-28

    申请号：US13436689

    申请日：2012-03-30

    申请人： Yeon Taek Jeong ,  Bo Sung Kim ,  Doo-Hyoung Lee ,  June Whan Choi ,  Tae-Young Choi ,  Kano Masataka

    发明人： Yeon Taek Jeong ,  Bo Sung Kim ,  Doo-Hyoung Lee ,  June Whan Choi ,  Tae-Young Choi ,  Kano Masataka

    IPC分类号： H01L21/00 ,  H01L29/423 ,  H01L29/49

    CPC分类号： H01L29/42384 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/512 ,  H01L29/786 ,  H01L2029/42388

    摘要： A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.

    摘要翻译： 提供薄膜晶体管。 根据本发明的示例性实施例的薄膜晶体管包括：基板; 栅极线，设置在所述基板上并且包括栅电极; 半导体层，设置在所述基板上，并且至少包括与所述栅电极重叠的部分; 设置在所述栅极线和所述半导体层之间的栅极绝缘层; 以及设置在所述基板上并且在所述半导体层的沟道区域上彼此面对的源电极和漏电极。 栅极绝缘层包括第一区域和第二区域，第一区域对应于半导体层的沟道区域，第一区域由第一材料制成，第二区域由第二材料制成，第一材料 并且第二材料具有不同的碳和硅原子数比。

    Method for making metal oxides
    8.
    发明申请
    Method for making metal oxides 审中-公开
    制造金属氧化物的方法

    公开(公告)号：US20070128707A1

    公开(公告)日：2007-06-07

    申请号：US11595479

    申请日：2006-11-10

    申请人： Gregory Rorrer ,  Chih-Hung Chang ,  Clayton Jeffryes ,  Tian Qin ,  Doo-hyoung Lee ,  Debra Gale

    发明人： Gregory Rorrer ,  Chih-Hung Chang ,  Clayton Jeffryes ,  Tian Qin ,  Doo-hyoung Lee ,  Debra Gale

    IPC分类号： C12P3/00 ,  G02F1/03

    CPC分类号： C12P3/00 ,  B82Y5/00 ,  Y02P20/59

    摘要： Embodiments of a method for making metal oxides or mixed metal oxides are disclosed. One representative embodiment comprises selecting a substrate for making the metal oxide or mixed metal oxide, contacting a biological system with the substrate material for an effective period of time, and optionally isolating the metal oxide or mixed metal oxide from the biological system. The biological system can be a living organism, or proteins derived from the living organism. Working embodiments used microalgae, specifically diatoms of the class Bacillariophycae, including marine Pennate diatoms, such as Nitzschia and/or Pinnularia diatoms, and Centric diatoms, such as Cyclotella species. The method also can involve post processing a primary or secondary material produced biologically. The metal oxides can be used for a variety of applications, including optoelectronic devices, such as memory devices, data storage devices, detectors, sensors, lasers, emitters, light-emitting diodes, optical computing architectures, photonics, imaging, photovoltaics, and administering therapeutic.

    摘要翻译： 公开了制造金属氧化物或混合金属氧化物的方法的实施方案。 一个代表性的实施方案包括选择用于制备金属氧化物或混合金属氧化物的衬底，使生物体系与衬底材料接触有效的时间，以及任选地从生物系统分离金属氧化物或混合金属氧化物。 生物系统可以是活的生物体，也可以是活体的蛋白质。 工作实施例使用微藻，特别是类杆菌的硅藻，包括海藻类硅藻，如Nitzschia和/或Pinnularia硅藻，以及Centric硅藻，如Cyclotella物种。 该方法还可以涉及后处理生物学产生的初级或次级材料。 金属氧化物可用于各种应用，包括诸如存储器件，数据存储设备，检测器，传感器，激光器，发射器，发光二极管，光学计算架构，光子学，成像，光伏和管理的光电器件 治疗。