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    Apparatus for flash vaporization delivery of reagents
    1.
    发明授权
    Apparatus for flash vaporization delivery of reagents 失效
    用于闪蒸的试剂装置

    公开(公告)号：US5536323A

    公开(公告)日：1996-07-16

    申请号：US280143

    申请日：1994-07-25

    申请人： Peter S. Kirlin ,  Robin L. Binder ,  Robin A. Gardiner ,  Peter V. Buskirk ,  Jiming Zhang ,  Gregory Stauf

    发明人： Peter S. Kirlin ,  Robin L. Binder ,  Robin A. Gardiner ,  Peter V. Buskirk ,  Jiming Zhang ,  Gregory Stauf

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  H01L39/24 ,  C23C16/00

    CPC分类号： C23C16/4483 ,  C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/45561 ,  H01L39/2441 ,  Y10S261/65 ,  Y10S261/88

    摘要： A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporzation matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may sutiably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g., of YBaCuO, BiSrCaCuO, and TlBaCaCuO types, as well as for forming interlayers of Group II metal fluorides between superconductor or gallium arsenide overlayers, and for depositing thin films of photonic and ferroelectric materials, e.g., BaTiO.sub.3, Ba.sub.x Sr.sub.1-x Nb.sub.2 O.sub.6, and PbZr.sub.1-x Ti.sub.x O.sub.3.

    摘要翻译： 一种用于递送气态非挥发性试剂的方法和装置，其中非挥发性试剂源液体在升高的温度下在汽化基质结构上闪蒸。 载气可以流过闪蒸气化基质结构以产生含有闪蒸的源试剂的载气混合物。 基质结构优选具有高的表面体积比，并且可以适当地包含诸如筛网的多孔基质元素，其上分配有试剂源液体用于闪蒸。 本发明特别可用于递送II族试剂和早期过渡金属如锆和铪的化合物和络合物，并且可以有用地用于IIB型β-二酮源层，例如YBaCuO，BiSrCaCuO和TlBaCaCuO类型， 以及用于在超导体或砷化镓覆盖层之间形成第II族金属氟化物的夹层，以及用于沉积光致电子和铁电材料的薄膜，例如BaTiO3，BaxSr1-xNb2O6和PbZr1-xTixO3。

    Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same
    2.
    发明授权
    Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same 失效
    源试剂液体输送装置和包含该源试剂液体输送装置的化学气相沉积系统

    公开(公告)号：US5711816A

    公开(公告)日：1998-01-27

    申请号：US484025

    申请日：1995-06-07

    申请人： Peter S. Kirlin ,  Robin L. Binder ,  Robin A. Gardiner ,  Peter Van Buskirk ,  Gregory Stauf ,  Jiming Zhang

    发明人： Peter S. Kirlin ,  Robin L. Binder ,  Robin A. Gardiner ,  Peter Van Buskirk ,  Gregory Stauf ,  Jiming Zhang

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  H01L39/24 ,  C23C16/00

    CPC分类号： C23C16/4483 ,  C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/45561 ,  H01L39/2441 ,  Y10S261/65

    摘要： A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporization matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may suitably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g., of YBaCuO, BiSrCaCuO, and TlBaCaCuO types, as well as for forming interlayers of Group II metal fluorides between superconductor or gallium arsenide overlayers, and for depositing thin films of photonic and ferroelectric materials, e.g., BaTiO.sub.3, Ba.sub.x Sr.sub.1-x Nb.sub.2 O.sub.6, and PbZr.sub.1-x Ti.sub.x O.sub.3.

    摘要翻译： 一种用于递送气态非挥发性试剂的方法和装置，其中非挥发性试剂源液体在升高的温度下在汽化基质结构上闪蒸。 载气可以流过闪蒸基质结构以产生含有闪蒸的源试剂的载气混合物。 基体结构优选具有高的表面体积比，并且可以适当地包括诸如筛网的多孔基质元素，其上分配有试剂源液体用于闪蒸。 本发明特别可用于递送II族试剂和早期过渡金属如锆和铪的化合物和络合物，并且可以有用地用于IIB型β-二酮源层，例如YBaCuO，BiSrCaCuO和TlBaCaCuO类型， 以及用于在超导体或砷化镓覆盖层之间形成第II族金属氟化物的夹层，以及用于沉积光致电子和铁电材料的薄膜，例如BaTiO3，BaxSr1-xNb2O6和PbZr1-xTixO3。

    Semiconductor device adhesive layer structure and process for forming structure
    4.
    发明授权
    Semiconductor device adhesive layer structure and process for forming structure 失效
    半导体器件粘合层结构及其结构工艺

    公开(公告)号：US06294458B1

    公开(公告)日：2001-09-25

    申请号：US09494458

    申请日：2000-01-31

    申请人： Jiming Zhang ,  Dean J. Denning ,  Sam S. Garcia ,  Scott K. Pozder

    发明人： Jiming Zhang ,  Dean J. Denning ,  Sam S. Garcia ,  Scott K. Pozder

    IPC分类号： H01L214763

    CPC分类号： H01L21/76831 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826

    摘要： The formation of an adhesion/interlayer region (410) of a semiconductor substrate device (404) before barrier layer (412) deposition provides improved adhesion of the barrier layer (412) to the underlying dielectric (404) and increases strength to the next interconnect layer without altering the function of the barrier layer (412) to limit Cu diffusion into the dielectric substrate (404). The adhesion/interlayer region (410) is formed in an inlaid structure (400, 500) of a semiconductor wafer. The inlaid structure (400, 500) is connected to upper or lower metal layers through vias in the dielectric layer (404) to a copper layer. The adhesion/interlayer region is formed by flowing a treating gas in a glow discharge process of the dielectric substrate in a chamber either attached or separated from the barrier deposition chamber (300). The barrier layer (412) and the adhesion/interlayer region (410) can be formed in this inlaid structure (400, 500) of a semiconductor wafer. The treating gas (212, 320) can be nitrogen, hydrogen, gases containing carbon atoms, or some other suitable gas.

    摘要翻译： 在阻挡层（412）沉积之前形成半导体衬底器件（404）的粘合/层间区域（410）提供了阻挡层（412）与下面的电介质（404）的改善的粘合性，并且增强了下一个互连的强度 而不改变阻挡层（412）的功能以限制扩散到电介质基板（404）中。 粘附/层间区域（410）以半导体晶片的镶嵌结构（400,500）形成。 镶嵌结构（400,500）通过介电层（404）中的通孔连接到上金属层或下金属层至铜层。 通过使电介质基板的辉光放电过程中的处理气体在与阻挡沉积室（300）连接或分离的室中流动来形成粘附/层间区域。 可以在半导体晶片的该镶嵌结构（400,500）中形成阻挡层（412）和粘附/层间区域（410）。 处理气体（212,320）可以是氮气，氢气，含有碳原子的气体或一些其它合适的气体。

    Process for forming a semiconductor device
    5.
    发明授权
    Process for forming a semiconductor device 失效
    用于形成半导体器件的工艺

    公开(公告)号：US5893752A

    公开(公告)日：1999-04-13

    申请号：US996000

    申请日：1997-12-22

    申请人： Jiming Zhang ,  Dean J. Denning

    发明人： Jiming Zhang ,  Dean J. Denning

    IPC分类号： H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L21/00

    CPC分类号： H01L21/76873 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53238 ,  H01L2924/0002

    摘要： A semiconductor device comprises a substrate (100), first conductive film (22 and 32) over the substrate (100), and a second conductive film (54 and 64) over the first conductive film (22 and 32). The first conductive film includes a refractory metal and nitrogen. The first conductive film has a first portion (22) that lies closer to the substrate and a second portion (32) that lies further from the substrate. The nitrogen percentage for the second portion (32) is lower than the nitrogen atomic percentage for the first portion (22). The second conductive film (54 and 64) includes mostly copper. The combination of portions (22 and 32) within the first conductive film provides a good diffusion barrier (first portion) and has good adhesion (second portion) with the second conductive film (54 and 64).

    摘要翻译： 半导体器件包括基板（100），在基板（100）上方的第一导电膜（22和32）以及位于第一导电膜（22和32）之上的第二导电膜（54和64）。 第一导电膜包括难熔金属和氮。 第一导电膜具有靠近基板的第一部分（22）和位于离基板更远的第二部分（32）。 第二部分（32）的氮百分比低于第一部分（22）的氮原子百分数。 第二导电膜（54和64）主要包括铜。 第一导电膜内的部分（22和32）的组合提供良好的扩散阻挡层（第一部分）并且与第二导电膜（54和64）具有良好的粘合力（第二部分）。

    Chemical vapor deposition method of growing oxide films with giant magnetoresistance
    6.
    发明授权
    Chemical vapor deposition method of growing oxide films with giant magnetoresistance 失效
    生长具有巨磁电阻的氧化膜的化学气相沉积方法

    公开(公告)号：US5487356A

    公开(公告)日：1996-01-30

    申请号：US345317

    申请日：1994-11-28

    申请人： Yi-Oun Li ,  Jiming Zhang

    发明人： Yi-Oun Li ,  Jiming Zhang

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  H01F1/40 ,  H01F41/20 ,  H01L43/12 ,  C30B23/08

    CPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/409 ,  C23C16/4481 ,  H01F1/40 ,  H01F41/20 ,  H01L43/12 ,  H01F1/0009

    摘要： A chemical vapor deposition method for forming films or coatings of metal oxide films showing a giant magnetoresistive effect, with the metal oxides having the formula La.sub.x A.sub.1-x MnO.sub.3 wherein A is selected from the group consisting of barium, calcium, manganese, and strontium, and x is a number in the range of from 0.2 to 0.4. The method uses a liquid source delivery CVD approach, wherein source reagent solution precursor is flash vaporized and is delivered to a CVD chamber, wherein it decomposes to deposit the multicomponent metal oxide films with well-controlled stoichiometry.

    摘要翻译： 用于形成具有巨大磁阻效应的金属氧化物膜的膜或涂层的化学气相沉积方法，其中金属氧化物具有式LaxA1-xMnO3，其中A选自钡，钙，锰和锶，x 是从0.2到0.4的数字。 该方法使用液体源递送CVD方法，其中源试剂溶液前体被闪蒸并被递送到CVD室，其中其分解以以良好控制的化学计量沉积多组分金属氧化物膜。

    TARGETED DELIVERY OF ACTIVE AGENTS USING THERMALLY STIMULATED LARGE INCREASE OF PERFUSION BY HIGH INTENSITY FOCUSED ULTRASOUND
    9.
    发明申请
    TARGETED DELIVERY OF ACTIVE AGENTS USING THERMALLY STIMULATED LARGE INCREASE OF PERFUSION BY HIGH INTENSITY FOCUSED ULTRASOUND 审中-公开
    通过高强度聚焦超声波，有效地传递活性剂，使用热刺激大幅度增加渗透

    公开(公告)号：US20130317360A1

    公开(公告)日：2013-11-28

    申请号：US13888083

    申请日：2013-05-06

    申请人： Pei-Herng Hor ,  Raja Muthupillai ,  Jiming Zhang

    发明人： Pei-Herng Hor ,  Raja Muthupillai ,  Jiming Zhang

    IPC分类号： A61M37/00

    CPC分类号： A61M37/0092 ,  A61B5/0036 ,  A61B5/055 ,  A61N7/02 ,  G01R33/4804

    摘要： In some embodiments, the present disclosure pertains to a method of delivery of an active agent to a target tissue, in a subject in need thereof comprising positioning a high intensity focused ultrasound transducer to enable delivery of ultrasound energy to the target tissue. Such a method comprises energizing the high intensity focused ultrasound transducer; imaging at least a portion of the target tissue; and discontinuing delivery of ultrasound energy. Further, such a method may comprise administering the active agent to the subject under the conditions of thermal stimulation. In another embodiment, the present disclosure relates to a method of treating a tumor in a subject in need thereof comprising administering a therapeutic agent to the subject and providing thermal stimulation to the tumor. In some embodiments, there is provided a method for increasing the efficacy of a therapeutic agent in a target tissue.

    摘要翻译： 在一些实施方案中，本公开内容涉及在有需要的受试者中将活性剂递送至靶组织的方法，包括定位高强度聚焦超声换能器以能够将超声能量传递到靶组织。 这种方法包括激发高强度聚焦超声换能器; 成像至少一部分目标组织; 并停止提供超声能量。 此外，这种方法可以包括在热刺激的条件下向受试者施用活性剂。 在另一个实施方案中，本公开涉及治疗有需要的受试者的肿瘤的方法，包括向受试者施用治疗剂并向肿瘤提供热刺激。 在一些实施方案中，提供了用于增加治疗剂在靶组织中的功效的方法。