公开(公告)号：US5362328A

公开(公告)日：1994-11-08

申请号：US178933

申请日：1994-01-07

申请人： Robin A. Gardiner ,  Peter Van Buskirk ,  Peter S. Kirlin

发明人： Robin A. Gardiner ,  Peter Van Buskirk ,  Peter S. Kirlin

IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  H01L39/24 ,  C23C16/00

CPC分类号： C23C16/4483 ,  C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/45561 ,  H01L39/2441 ,  Y10S261/65 ,  Y10S261/88

摘要： A means and method for protecting a source reagent vaporizer structure from the harmful effects of solid build-up occurring during its use in chemical vapor deposition (CVD). Vaporizer structures may be used to provide a means of transferring relatively involatile source reagents or reagent solutions into CVD reactors and often are high surface area, highly efficient heat transfer structures. When vaporizers are used in CVD, often some premature decomposition of the source reagent occurs on the vaporizer element as well as some oxidative decomposition to produce solid products which cause clogging and inefficient vaporization. The invention provides both apparatus and method to periodically flush clean such vaporizer elements to increase their consistency, reliability, and average time between servicings.

摘要翻译： 一种用于保护源试剂蒸发器结构免受在化学气相沉积（CVD）期间发生的固体积聚的有害影响的方法和方法。 蒸发器结构可用于提供将相对非挥发性的源试剂或试剂溶液转移到CVD反应器中并且通常是高表面积，高效传热结构的方法。 当CVD中使用蒸发器时，通常会在蒸发器元件上发生一些源分解器的过早分解以及一些氧化分解，产生固体产物，导致堵塞和无效蒸发。 本发明提供了周期性地清洗这种蒸发器元件以提高它们的一致性，可靠性和服务之间的平均时间的装置和方法。

公开(公告)号：US20080049379A1

公开(公告)日：2008-02-28

申请号：US11924716

申请日：2007-10-26

申请人： Peter Van Buskirk ,  Jeffrey Roeder ,  Steven Bilodeau ,  Michael Russell ,  Stephen Johnston ,  Daniel Vestyck ,  Thomas Baum

发明人： Peter Van Buskirk ,  Jeffrey Roeder ,  Steven Bilodeau ,  Michael Russell ,  Stephen Johnston ,  Daniel Vestyck ,  Thomas Baum

IPC分类号： H01G4/12 ,  B05D5/12 ,  C04B35/00

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15毫米。 在优选实施例中，对应的电容器面积（即横向缩放）在大约10 4至大约10至2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US6120846A

公开(公告)日：2000-09-19

申请号：US996575

申请日：1997-12-23

申请人： Frank Hintermaier ,  Bryan Hendrix ,  Jeff Roeder ,  Peter Van Buskirk ,  Thomas H. Baum

发明人： Frank Hintermaier ,  Bryan Hendrix ,  Jeff Roeder ,  Peter Van Buskirk ,  Thomas H. Baum

IPC分类号： C23C16/04 ,  C23C16/40 ,  H01B3/12 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/8246 ,  H01L27/105 ,  B05D5/00 ,  C23C16/00

CPC分类号： C23C16/04 ,  C23C16/40 ,  H01L21/31691

摘要： A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain areas and low bismuth deposition efficiency in other areas in combination with specific process parameters.

摘要翻译： 描述了通过选择性化学气相沉积在基底上选择性沉积铋基铁电薄膜的方法。 沉积过程中的选择性通过选择确保某些区域中高铋沉积效率的底物 - 前体组合，并结合特定工艺参数在其它区域中具有低铋沉积效率来实现。

公开(公告)号：US6010744A

公开(公告)日：2000-01-04

申请号：US996574

申请日：1997-12-23

申请人： Peter Van Buskirk ,  Jeff Roeder ,  Frank Hintermaier ,  Bryan Hendrix ,  Thomas H. Baum

发明人： Peter Van Buskirk ,  Jeff Roeder ,  Frank Hintermaier ,  Bryan Hendrix ,  Thomas H. Baum

IPC分类号： C23C16/04 ,  C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  B05D5/00

CPC分类号： H01L21/02271 ,  C23C16/04 ,  C23C16/40 ,  H01L21/02197 ,  H01L21/02299 ,  H01L21/31691 ,  Y10S977/891

摘要： A method is described for the nucleation controlled deposition of ferroelectric thin films by chemical vapor deposition in a novel processing sequence wherein a higher density of bismuth nucleation sites is achieved either by the use of a substrate member which has been treated in a manner to yield a controllably and reproducible rough surface on which SBT films with excellent properties may be produced or by using a chemically modified substrate surface upon which surface chemical properties are modified. Typical techniques for achieving surface roughening include reactive ion etching, inert ion milling and chemical mechanical polishing, each of which may be used to delineate patterned bottom electrodes. The chemical properties of the substrate may be modified by alloy deposition, deposition of seed layers which are then partially or completely in-diffused ion implantation with or without heat treatment and changing the chemistry of the surface by a pre-exposure to chemical agents prior to deposition. The resultant oxide ferroelectric thin films are suitable for use in capacitors, memory devices and the like.

摘要翻译： 描述了一种通过化学气相沉积的铁电薄膜的成核控制沉积的方法，其中新颖的加工顺序中，其中通过使用已经以产生a的方式处理的基底部件实现了较高密度的铋成核位点 粗糙表面的可控制和可重复性，可以在其上生产具有优异性能的SBT膜或通过使用改性表面化学性质的化学改性的基材表面。 用于实现表面粗糙化的典型技术包括反应离子蚀刻，惰性离子研磨和化学机械抛光，其中每一种可用于描绘图案化底部电极。 基材的化学性质可以通过合金沉积，种子层的沉积进行改性，然后种子层将被部分或全部扩散离子注入，有或者没有热处理，并且通过预先暴露于化学试剂之前改变表面的化学性质， 沉积 所得到的氧化物铁电薄膜适用于电容器，存储器件等。

公开(公告)号：US5711816A

公开(公告)日：1998-01-27

申请号：US484025

申请日：1995-06-07

申请人： Peter S. Kirlin ,  Robin L. Binder ,  Robin A. Gardiner ,  Peter Van Buskirk ,  Gregory Stauf ,  Jiming Zhang

发明人： Peter S. Kirlin ,  Robin L. Binder ,  Robin A. Gardiner ,  Peter Van Buskirk ,  Gregory Stauf ,  Jiming Zhang

IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  H01L39/24 ,  C23C16/00

CPC分类号： C23C16/4483 ,  C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/45561 ,  H01L39/2441 ,  Y10S261/65

摘要： A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporization matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may suitably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g., of YBaCuO, BiSrCaCuO, and TlBaCaCuO types, as well as for forming interlayers of Group II metal fluorides between superconductor or gallium arsenide overlayers, and for depositing thin films of photonic and ferroelectric materials, e.g., BaTiO.sub.3, Ba.sub.x Sr.sub.1-x Nb.sub.2 O.sub.6, and PbZr.sub.1-x Ti.sub.x O.sub.3.

摘要翻译： 一种用于递送气态非挥发性试剂的方法和装置，其中非挥发性试剂源液体在升高的温度下在汽化基质结构上闪蒸。 载气可以流过闪蒸基质结构以产生含有闪蒸的源试剂的载气混合物。 基体结构优选具有高的表面体积比，并且可以适当地包括诸如筛网的多孔基质元素，其上分配有试剂源液体用于闪蒸。 本发明特别可用于递送II族试剂和早期过渡金属如锆和铪的化合物和络合物，并且可以有用地用于IIB型β-二酮源层，例如YBaCuO，BiSrCaCuO和TlBaCaCuO类型， 以及用于在超导体或砷化镓覆盖层之间形成第II族金属氟化物的夹层，以及用于沉积光致电子和铁电材料的薄膜，例如BaTiO3，BaxSr1-xNb2O6和PbZr1-xTixO3。