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    Materials resistant to metal and salt melts, their production and their use
    1.
    发明授权
    Materials resistant to metal and salt melts, their production and their use 失效
    耐金属和盐熔体的材料，其生产和使用

    公开(公告)号：US4755220A

    公开(公告)日：1988-07-05

    申请号：US117329

    申请日：1987-11-06

    申请人： Peter Woditsch ,  Werner Kannchen ,  Horst Lange ,  Ingo Schwirtlich

    发明人： Peter Woditsch ,  Werner Kannchen ,  Horst Lange ,  Ingo Schwirtlich

    IPC分类号： C30B15/10 ,  B22C1/00 ,  C04B35/584 ,  C04B35/591 ,  C30B13/14 ,  C30B29/06 ,  C30B35/00 ,  C22C29/12

    CPC分类号： C30B35/002 ,  C04B35/591

    摘要： A material resistant to high temperature melts of metal and salt which comprises a composite material containing silicon nitride, silicon oxynitride, silicon dioxide and silicon prepared by(a) suspending silicon powder in SiO.sub.2 sol to form a pourable mass,(b) molding a workpiece from said mass,(c) hardening the molded workpiece, and(d) nitriding the hardened workpiece in a nitrogen atmosphere to form silicon nitride and silicon oxynitride to a degree that SiO.sub.2 and elemental silicon remain detectable in the nitrided workpiece,is useful as the material of construction for crucibles and tools for confining, handling and treating melts of metals or salts.

    摘要翻译： 耐高温熔融金属和盐的材料，其包含通过（a）将硅粉末悬浮在SiO 2溶胶中以形成可倾倒物质制备的包含氮化硅，氮氧化硅，二氧化硅和硅的复合材料，（b）模制工件 （c）硬化成型工件，（d）在氮气气氛中氮化氮化硅和氮氧化硅至达到在氮化工件中保持可检测的程度的氮化硅和氮氧化硅，可用作 用于坩埚的结构材料和用于限制，处理和处理金属或盐的熔融物的工具。

    Process for the melting and directional solidification of metals
    3.
    发明授权
    Process for the melting and directional solidification of metals 失效
    金属熔化和定向凝固的工艺

    公开(公告)号：US5013393A

    公开(公告)日：1991-05-07

    申请号：US517235

    申请日：1990-05-01

    申请人： Ingo Schwirtlich ,  Peter Woditsch

    发明人： Ingo Schwirtlich ,  Peter Woditsch

    IPC分类号： C30B21/02 ,  B22D27/04 ,  C30B11/00

    CPC分类号： C30B29/06 ,  C30B11/00 ,  C30B29/605

    摘要： A process for the production of columnlarly solidified metallic bodies by melting metal and then solidifying said metal in a crucible, wherein the dissipation of heat is greater at the upper or lower end of the crucible than at the sides, which comprises supplying heat to the verticals sides through a heating element having a plurality of individually controlled heating sections in such a quantity that a melt of the metal is formed and then establishing directional solidification by establishing a temperature gradient by varying the heat output among the heating sections of the heating element by switching.

    摘要翻译： 一种用于通过熔化金属然后在坩埚中固化所述金属来生产柱状固化的金属体的方法，其中在坩埚的上端或下端的散热比在侧面更大，其包括向垂直方向供热 通过具有多个单独控制的加热部分的加热元件的侧面形成金属熔体，然后通过改变加热元件的加热部分之间的热输出来建立温度梯度来建立定向凝固 。

    Strip-shaped films of metals, a process and an apparatus for the production thereof and the use thereof
    7.
    发明授权
    Strip-shaped films of metals, a process and an apparatus for the production thereof and the use thereof 失效
    金属条带状膜，其制造方法和装置及其用途

    公开(公告)号：US4790871A

    公开(公告)日：1988-12-13

    申请号：US589612

    申请日：1984-03-14

    申请人： Ingo Schwirtlich ,  Peter Woditsch

    发明人： Ingo Schwirtlich ,  Peter Woditsch

    IPC分类号： C30B13/06 ,  C22C1/02 ,  C30B13/00 ,  C30B13/32 ,  C30B29/06 ,  C30B29/64 ,  C22B9/16

    CPC分类号： C30B13/32 ,  C30B13/00 ,  C30B29/60 ,  Y10T428/12458

    摘要： In the recrystallization and purification of a strip-shaped film of a metal or metalloid wherein one or more locally restricted melting zones are produced and are moved through the film, the improvement which comprises advancing the film, and melting it in zones which are transverse to the direction of advance of the strip-shaped film. Advantageously the film is melted by passing a current through a spirally wound coil which is placed near the film; the film is advantageously advanced in a plane so that the melt zones are diagonal relative to the film.

    摘要翻译： 在金属或准金属的带状膜的再结晶和纯化中，其中产生一个或多个局部受限的熔融区并移动通过该膜，其改进包括使膜前进并在横向于 带状膜的前进方向。 有利地，通过使电流通过放置在膜附近的螺旋卷绕的线圈而熔化膜; 薄膜有利地在平面中前进，使得熔体区域相对于薄膜是对角线的。

    Process and apparatus for producing semi-conductor foils
    8.
    发明授权
    Process and apparatus for producing semi-conductor foils 失效
    用于生产半导体箔的工艺和设备

    公开(公告)号：US4670096A

    公开(公告)日：1987-06-02

    申请号：US730982

    申请日：1985-05-06

    申请人： Ingo Schwirtlich ,  Peter Woditsch

    发明人： Ingo Schwirtlich ,  Peter Woditsch

    IPC分类号： H01L31/04 ,  C01B33/02 ,  C30B15/00 ,  C30B29/64 ,  H01L21/208 ,  C03B19/02

    CPC分类号： C30B15/007 ,  Y10S117/915

    摘要： In the production of a semi-conductor foil by solidification of a liquid semi-conductor on a horizontal support, the improvement which comprises positioning a molding body on the horizontal support, supplying the liquid semi-conductor to the molding body, and effecting relative movement between the molding body and support in a direction parallel to the support. Thereby fault-free silicon foils can readily be produced.

    摘要翻译： 在通过在水平支撑件上固定液体半导体的半导体箔的制造中，改进之处在于，将成型体定位在水平支撑件上，将液体半导体供应到成型体，并实现相对运动 在成型体和支撑体之间沿平行于支撑件的方向。 从而可以容易地制造出无故障的硅箔。

    Device for making monocrystalline or multicrystalline materials, in particular multicrystalline silicon
    10.
    发明授权
    Device for making monocrystalline or multicrystalline materials, in particular multicrystalline silicon 有权
    用于制造单晶或多晶材料的装置，特别是多晶硅

    公开(公告)号：US07811383B2

    公开(公告)日：2010-10-12

    申请号：US12421051

    申请日：2009-04-09

    申请人： Matthias Mueller ,  Markus Finkbeiner ,  Uwe Sahr ,  Ingo Schwirtlich ,  Michael Clauss

    发明人： Matthias Mueller ,  Markus Finkbeiner ,  Uwe Sahr ,  Ingo Schwirtlich ,  Michael Clauss

    IPC分类号： C30B11/00 ,  C30B21/04

    CPC分类号： C30B29/06 ,  C30B11/003 ,  C30B35/002 ,  H01L31/04 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/10 ,  Y10T117/102 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

    摘要： The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible. This temperature profile corresponds to the temperature gradient formed in the center of the crucible. The heat output of the flat heating device decreases from the top to the bottom end of the crucible. The flat heating device includes parallel heating webs, which extend in a meandering course. The heat outputs from the heating webs differ according to their different conductor cross sections. To avoid local overheating in corner areas of the crucible, constrictions of the cross sections of the heating webs are provided at inversion zones of their meandering course.

    摘要翻译： 使用VGF方法制造单晶或多晶材料坯料，特别是硅多晶坯料的装置具有矩形或正方形横截面的坩埚。 在坩埚周围布置有平坦加热装置，特别是产生不均匀温度分布的夹套加热器。 该温度曲线对应于在坩埚中心形成的温度梯度。 扁平加热装置的热输出从坩埚的顶端向下端减小。 平面加热装置包括平行加热腹板，其在曲折的过程中延伸。 来自加热腹板的热量输出根据其不同的导体横截面而不同。 为了避免在坩埚的拐角区域局部过热，在它们的蜿蜒过程的反转区域处设置加热幅材横截面的收缩。