Abstract:
A gas concentration of a gas may be detected from a gas mixture using gas detectors sensitive to the gas. A gas concentration may be measured by a first gas detector at a first operating temperature, and a first signal characteristic of the measured gas concentration may be provided. An operating temperature of the first gas detector may be changed to a second operating temperature, or a second gas detector having the second operating temperature may be provided. A gas concentration may then be measured at the second operating temperature, and a second signal characteristic of the measured gas concentration may be provided. The gas concentration of the gas from the gas mixture may be determined using a first concentration value allocated to the first signal and a second concentration value allocated to the second signal.
Abstract:
A method (500, 600) is described for detecting a gas concentration of a gas from a gas mixture, a plurality of gas detectors (304, 402, 404) sensitive to the gas or one gas detector (304, 404) sensitive to the gas being used in different operating states for this detection, and the method (500, 600) includes a step of providing (502) the gas detector (304, 404), the gas detector (304, 404) having a first operating temperature (310). In a next step of the method (500, 600), the gas mixture is supplied (504) to the gas detector (304, 404), a gas concentration of the gas from the gas mixture being measured by the gas detector (304, 404) at the first operating temperature (310), and a first signal (202) characteristic of the measured gas concentration being provided. In addition, the method (500, 600) includes a step of changing (506) an operating temperature of the gas detector to a second operating temperature (312), which is different from the first operating temperature (310), or providing (602) an additional gas detector (402), the additional gas detector (402) having the second operating temperature (312). In another step of the method (500, 600), the gas mixture is fed (508, 604) to the gas detector (304, 404) or the additional gas detector (402), a gas concentration of the gas from the gas mixture being measured by the gas detector (304, 404) or the additional gas detector (402) at the second operating temperature (312), and a second signal (204) characteristic of the measured gas concentration being provided. Furthermore, the method (500, 600) includes a step of determining (510) a gas concentration of the gas from the gas mixture using a first concentration value allocated to the first signal (202) and a second concentration value allocated to the second signal (204).
Abstract:
An arrangement for detecting hydrogen peroxide includes a sample space configured to receive a hydrogen-peroxide-containing gas. The sample space is fluidically connected to a hydrogen-peroxide-selective colorimetric detection reagent. The arrangement also includes at least one radiation source configured to irradiate the detection reagent and at least one detector configured to detect at least one optical property of the colorimetric detection reagent. This arrangement enables detection of hydrogen peroxide in the gaseous phase without the need to transfer hydrogen peroxide to the liquid phase. As a result, a simplified measurement behavior and additionally a highly sensitive measurement are attained.
Abstract:
A gas sensor for determining gas components in gas mixtures, e.g., for exhaust gases of internal combustion engines, includes a housing and a sensor element configured as a field effect transistor which has source, drain, and gate electrodes applied on a semiconductor substrate. A porous, catalytically active material is provided inside the housing of the gas sensor.
Abstract:
A gas-sensitive semiconductor device having a semiconductive channel (10) which is delimited by a first (12) and a second (14) channel electrode, and having a gate electrode (16) which is associated with the channel and which cooperates with the channel in such a way that a change in conductivity of the channel (10) occurs as a response to an action of a gas. The gate electrode (16) and/or a gate insulation layer (20) which insulates the gate electrode from the channel, and/or a gate stack layer (18) which may be provided between the gate electrode and the channel have/has two surface sections (22, 24) which differ in their sensitivity to gases.
Abstract:
A gas-sensitive semiconductor device having a semiconductive channel (10) which is delimited by a first (12) and a second (14) channel electrode, and having a gate electrode (16) which is associated with the channel and which cooperates with the channel in such a way that a change in conductivity of the channel (10) occurs as a response to an action of a gas. The gate electrode (16) and/or a gate insulation layer (20) which insulates the gate electrode from the channel, and/or a gate stack layer (18) which may be provided between the gate electrode and the channel have/has two surface sections (22, 24) which differ in their sensitivity to gases.
Abstract:
An exhaust system of an internal combustion engine includes a first filter device and a second filter device located downstream of the first. Both filter devices filter soot particles out of the exhaust gas. At least the first filter device has a catalytic material, which promotes an exothermic soot burnoff in such a way that as a result of the corresponding heating up of the exhaust gas, the soot burnoff in the second filter device is set in motion. The materials of the two filter devices are selected such that the soot burnoff in the first filter device ensues at a lower temperature and/or at a similar temperature is stronger than in the second filter device.
Abstract:
A gas sensor for determining gas components in gas mixtures, e.g., for exhaust gases of internal combustion engines, includes a housing and a sensor element configured as a field effect transistor which has source, drain, and gate electrodes applied on a semiconductor substrate. A porous, catalytically active material is provided inside the housing of the gas sensor.
Abstract:
A chemically sensitive field effect transistor includes a substrate, a conductor track structure situated on the substrate, and a functional layer which is contacted via the conductor track structure. To be able to form a thin, oxidation-stable and temperature-stable conductor track structure, the conductor track structure is made of a metal mixture which includes platinum and one or more metals selected from the group made up of rhodium, iridium, ruthenium, palladium, osmium, gold, scandium, yttrium, lanthanum, the lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, rhenium, iron, cobalt, nickel, copper, boron, aluminum, gallium, indium, silicon, and germanium.
Abstract:
A sensor element of a gas sensor for determining gas components in gas mixtures is provided, which includes a field-effect transistor having a source electrode, a drain electrode, and a gate electrode. The gate electrode includes a gate metallization, which is in contact with an insulation layer or a semiconductor substrate of the field-effect transistor via a boundary layer, the boundary layer being formed by modifying the surface of the insulation layer or the semiconductor substrate using metal alkoxides, metal amides, metal halogenides and/or metal alkyls. Furthermore, a method for producing said sensor element is provided.