Abstract:
A gas sensor for determining gas components in gas mixtures, e.g., for exhaust gases of internal combustion engines, includes a housing and a sensor element configured as a field effect transistor which has source, drain, and gate electrodes applied on a semiconductor substrate. A porous, catalytically active material is provided inside the housing of the gas sensor.
Abstract:
A gas sensor for determining gas components in gas mixtures, e.g., for exhaust gases of internal combustion engines, includes a housing and a sensor element configured as a field effect transistor which has source, drain, and gate electrodes applied on a semiconductor substrate. A porous, catalytically active material is provided inside the housing of the gas sensor.
Abstract:
A chemically sensitive field effect transistor includes a substrate, a conductor track structure situated on the substrate, and a functional layer which is contacted via the conductor track structure. To be able to form a thin, oxidation-stable and temperature-stable conductor track structure, the conductor track structure is made of a metal mixture which includes platinum and one or more metals selected from the group made up of rhodium, iridium, ruthenium, palladium, osmium, gold, scandium, yttrium, lanthanum, the lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, rhenium, iron, cobalt, nickel, copper, boron, aluminum, gallium, indium, silicon, and germanium.
Abstract:
A method for producing at least one porous layer on a substrate, whereby a suspension, which contains particles from a layer-forming material or molecular precursors of the layer-forming material, as well as at least one organic component, is applied to the substrate, the precursors of the layer-forming material are subsequently reacted to produce the layer-forming material following application to the substrate, in a next step, the particles from the layer-forming material are sintered, and the at least one organic component is subsequently removed. Also, a field-effect transistor having at least one gate electrode, the gate electrode having an electrically conductive, porous coating which was applied in accordance with the method.
Abstract:
A chemically sensitive field effect transistor includes a substrate, a conductor track structure situated on the substrate, and a functional layer which is contacted via the conductor track structure. To be able to form a thin, oxidation-stable and temperature-stable conductor track structure, the conductor track structure is made of a metal mixture which includes platinum and one or more metals selected from the group made up of rhodium, iridium, ruthenium, palladium, osmium, gold, scandium, yttrium, lanthanum, the lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, rhenium, iron, cobalt, nickel, copper, boron, aluminum, gallium, indium, silicon, and germanium.
Abstract:
A gas-sensitive semiconductor device having a semiconductive channel (10) which is delimited by a first (12) and a second (14) channel electrode, and having a gate electrode (16) which is associated with the channel and which cooperates with the channel in such a way that a change in conductivity of the channel (10) occurs as a response to an action of a gas. The gate electrode (16) and/or a gate insulation layer (20) which insulates the gate electrode from the channel, and/or a gate stack layer (18) which may be provided between the gate electrode and the channel have/has two surface sections (22, 24) which differ in their sensitivity to gases.
Abstract:
A gas-sensitive semiconductor device having a semiconductive channel (10) which is delimited by a first (12) and a second (14) channel electrode, and having a gate electrode (16) which is associated with the channel and which cooperates with the channel in such a way that a change in conductivity of the channel (10) occurs as a response to an action of a gas. The gate electrode (16) and/or a gate insulation layer (20) which insulates the gate electrode from the channel, and/or a gate stack layer (18) which may be provided between the gate electrode and the channel have/has two surface sections (22, 24) which differ in their sensitivity to gases.
Abstract:
An exhaust system of an internal combustion engine includes a first filter device and a second filter device located downstream of the first. Both filter devices filter soot particles out of the exhaust gas. At least the first filter device has a catalytic material, which promotes an exothermic soot burnoff in such a way that as a result of the corresponding heating up of the exhaust gas, the soot burnoff in the second filter device is set in motion. The materials of the two filter devices are selected such that the soot burnoff in the first filter device ensues at a lower temperature and/or at a similar temperature is stronger than in the second filter device.
Abstract:
A gas concentration of a gas may be detected from a gas mixture using gas detectors sensitive to the gas. A gas concentration may be measured by a first gas detector at a first operating temperature, and a first signal characteristic of the measured gas concentration may be provided. An operating temperature of the first gas detector may be changed to a second operating temperature, or a second gas detector having the second operating temperature may be provided. A gas concentration may then be measured at the second operating temperature, and a second signal characteristic of the measured gas concentration may be provided. The gas concentration of the gas from the gas mixture may be determined using a first concentration value allocated to the first signal and a second concentration value allocated to the second signal.
Abstract:
A method (500, 600) is described for detecting a gas concentration of a gas from a gas mixture, a plurality of gas detectors (304, 402, 404) sensitive to the gas or one gas detector (304, 404) sensitive to the gas being used in different operating states for this detection, and the method (500, 600) includes a step of providing (502) the gas detector (304, 404), the gas detector (304, 404) having a first operating temperature (310). In a next step of the method (500, 600), the gas mixture is supplied (504) to the gas detector (304, 404), a gas concentration of the gas from the gas mixture being measured by the gas detector (304, 404) at the first operating temperature (310), and a first signal (202) characteristic of the measured gas concentration being provided. In addition, the method (500, 600) includes a step of changing (506) an operating temperature of the gas detector to a second operating temperature (312), which is different from the first operating temperature (310), or providing (602) an additional gas detector (402), the additional gas detector (402) having the second operating temperature (312). In another step of the method (500, 600), the gas mixture is fed (508, 604) to the gas detector (304, 404) or the additional gas detector (402), a gas concentration of the gas from the gas mixture being measured by the gas detector (304, 404) or the additional gas detector (402) at the second operating temperature (312), and a second signal (204) characteristic of the measured gas concentration being provided. Furthermore, the method (500, 600) includes a step of determining (510) a gas concentration of the gas from the gas mixture using a first concentration value allocated to the first signal (202) and a second concentration value allocated to the second signal (204).