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    Edge termination structure
    1.
    发明授权
    Edge termination structure 失效
    边缘端接结构

    公开(公告)号：US5949124A

    公开(公告)日：1999-09-07

    申请号：US999889

    申请日：1997-05-09

    申请人： Peyman Hadizad ,  Zheng Shen ,  Ali Salih

    发明人： Peyman Hadizad ,  Zheng Shen ,  Ali Salih

    IPC分类号： H01L23/58 ,  H01L29/06

    CPC分类号： H01L23/585 ,  H01L29/0661 ,  H01L2924/0002

    摘要： An edge termination structure is created by forming trench structures (14) near a PN junction. The presence of the trench structures (14) extends a depletion region (13) between a doped region (12) and a body of semiconductor material or a semiconductor substrate (11) of the opposite conductivity type away from the doped region (12). This in turn forces junction breakdown to occur in the semiconductor bulk, leading to enhancement of the breakdown voltage of a semiconductor device (10). A surface of the trench structures (14) is covered with a conductive layer (16) which keeps the surface of the trench structures (14) at an equal voltage potential. This creates an equipotential surface across each of the trench structures (14) and forces the depletion region to extend laterally along the surface of semiconductor substrate (11). The conductive layers (16) are electrically isolated from an electrical contact (17) which contacts the doped region (12) and from the conductive layers (16) of neighboring trench structures (14).

    摘要翻译： 通过在PN结附近形成沟槽结构（14）来产生边缘终端结构。 沟槽结构（14）的存在延伸了掺杂区域（12）和半导体材料体之间的耗尽区（13）或者与掺杂区域（12）相反的导电类型的半导体衬底（11）。 这又导致在半导体体中发生结击穿，导致半导体器件（10）的击穿电压的提高。 沟槽结构（14）的表面被导电层（16）覆盖，导电层保持沟槽结构（14）的表面处于相等的电压电位。 这产生跨越每个沟槽结构（14）的等势面，并迫使耗尽区沿着半导体衬底（11）的表面横向延伸。 导电层（16）与接触掺杂区域（12）的电触点（17）和相邻沟槽结构（14）的导电层（16）电隔离。

    Semiconductor component and method of manufacturing
    2.
    发明授权
    Semiconductor component and method of manufacturing 有权
    半导体元件及制造方法

    公开(公告)号：US07205605B2

    公开(公告)日：2007-04-17

    申请号：US10842393

    申请日：2004-05-10

    申请人： Peyman Hadizad ,  Jina Shumate ,  Ali Salih

    发明人： Peyman Hadizad ,  Jina Shumate ,  Ali Salih

    IPC分类号： H01L29/76

    CPC分类号： H01L29/66734 ,  H01L21/2254 ,  H01L21/2257 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7813

    摘要： A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component further includes a channel region (120) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region (755) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.

    摘要翻译： 半导体部件包括具有沟槽（326）的半导体层（110）。 沟渠有第一面和第二面。 半导体层的一部分（713）具有导电类型和电荷密度。 半导体部件还包括沟槽中的控制电极（540,1240）。 半导体部件还包括在半导体层中并且与沟槽相邻的沟道区域（120）。 半导体部件还包括半导体层中的区域（755）。 该区域具有与半导体层的部分不同的导电类型。 该区域还具有平衡半导体层部分的电荷密度的电荷密度。

    Semiconductor component and method of manufacturing
    3.
    发明授权
    Semiconductor component and method of manufacturing 有权
    半导体元件及制造方法

    公开(公告)号：US06756273B2

    公开(公告)日：2004-06-29

    申请号：US09802726

    申请日：2001-03-12

    申请人： Peyman Hadizad ,  Jina Shumate ,  Ali Salih

    发明人： Peyman Hadizad ,  Jina Shumate ,  Ali Salih

    IPC分类号： H01L2100

    CPC分类号： H01L29/66734 ,  H01L21/2254 ,  H01L21/2257 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7813

    摘要： A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component further includes a channel region (120) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region (755) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.

    摘要翻译： 半导体部件包括具有沟槽（326）的半导体层（110）。 沟渠有第一面和第二面。 半导体层的一部分（713）具有导电类型和电荷密度。 半导体部件还包括沟槽中的控制电极（540,1240）。 半导体部件还包括在半导体层中并且与沟槽相邻的沟道区域（120）。 半导体部件还包括半导体层中的区域（755）。 该区域具有与半导体层的部分不同的导电类型。 该区域还具有平衡半导体层部分的电荷密度的电荷密度。

    SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING
    4.
    发明申请
    SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING 有权
    半导体元件及其制造方法

    公开(公告)号：US20080006874A1

    公开(公告)日：2008-01-10

    申请号：US11668872

    申请日：2007-01-30

    申请人： Peyman Hadizad ,  Jina Shumate ,  Ali Salih

    发明人： Peyman Hadizad ,  Jina Shumate ,  Ali Salih

    IPC分类号： H01L29/76

    CPC分类号： H01L29/66734 ,  H01L21/2254 ,  H01L21/2257 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7813

    摘要： A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component further includes a channel region (120) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region (755) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.

    摘要翻译： 半导体部件包括具有沟槽（326）的半导体层（110）。 沟渠有第一面和第二面。 半导体层的一部分（713）具有导电类型和电荷密度。 半导体部件还包括沟槽中的控制电极（540,1240）。 半导体部件还包括在半导体层中并且与沟槽相邻的沟道区域（120）。 半导体部件还包括半导体层中的区域（755）。 该区域具有与半导体层的部分不同的导电类型。 该区域还具有平衡半导体层部分的电荷密度的电荷密度。

    Clamp disposed at edge of a dielectric structure in a semiconductor device and method of forming same
    6.
    发明授权
    Clamp disposed at edge of a dielectric structure in a semiconductor device and method of forming same 失效
    设置在半导体器件中的电介质结构的边缘处的夹具及其形成方法

    公开(公告)号：US5804869A

    公开(公告)日：1998-09-08

    申请号：US829073

    申请日：1997-03-31

    申请人： Peyman Hadizad ,  Ali Salih ,  John Robert Bender ,  John David Moran

    发明人： Peyman Hadizad ,  Ali Salih ,  John Robert Bender ,  John David Moran

    IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/58

    CPC分类号： H01L23/564 ,  H01L23/3171 ,  H01L2924/0002

    摘要： A semiconductor structure (10) uses a clamp (16) disposed at an edge (27) of a dielectric structure (14) in a semiconductor device. The clamp substantially reduces the separation or peeling of the dielectric structure or layer away from the underlying semiconductor material (20,24). The clamp also provides the benefit of protecting the interface between the dielectric layer and the underlying semiconductor material from chemical or moisture attack, either during later processing or after final manufacture. Such chemical or moisture attack and internal film stress are factors leading to separation of the dielectric film from the underlying semiconductor material. The clamp is useful, for example, in preventing separation of silicon nitride or oxide passivation from gallium arsenide substrates in power rectifier diodes.

    摘要翻译： 半导体结构（10）使用设置在半导体器件中的电介质结构（14）的边缘（27）处的夹具（16）。 夹具基本上减少了介质结构或层离开下面的半导体材料（20,24）的分离或剥离。 夹具还提供了保护介电层和下面的半导体材料之间的界面免受化学或水分侵蚀的好处，无论是在后期加工还是在最终制造之后。 这种化学或水分侵袭和内部薄膜应力是导致电介质膜与下面的半导体材料分离的因素。 夹具例如用于防止在功率整流二极管中分离氮化硅或氧化物钝化与砷化镓衬底。