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    Integrated BiCMOS semiconductor circuit
    1.
    发明授权
    Integrated BiCMOS semiconductor circuit 有权
    集成BiCMOS半导体电路

    公开(公告)号：US07498639B2

    公开(公告)日：2009-03-03

    申请号：US11233960

    申请日：2005-09-23

    申请人： Philipp Steinmann ,  Scott Balster ,  Badih El-Kareh ,  Thomas Scharnagl ,  Michael Schmitt

    发明人： Philipp Steinmann ,  Scott Balster ,  Badih El-Kareh ,  Thomas Scharnagl ,  Michael Schmitt

    IPC分类号： H01L31/112

    CPC分类号： H01L27/0623 ,  H01L21/76229 ,  H01L21/8249 ,  H01L27/0207

    摘要： An integrated BiCMOS semiconductor circuit has active moat areas in silicon. The active moat areas include electrically active components of the semiconductor circuit, which comprise active window structures for base and/or emitter windows. The integrated BiCMOS semiconductor circuit has zones where silicon is left to form dummy moat areas which do not include electrically active components, and has isolation trenches to separate the active moat areas from each other and from the dummy moat areas. The dummy moat areas comprise dummy window structures having geometrical dimensions and shapes similar to those of the active window structures for the base and/or emitter windows.

    摘要翻译： 集成的BiCMOS半导体电路在硅中具有积极的护城河区域。 活动的护壕区域包括半导体电路的电活性部件，其包括用于基底和/或发射器窗口的有源窗口结构。 集成的BiCMOS半导体电路具有区域，其中硅留下以形成不包括电活性部件的虚拟护城河区域，并且具有隔离沟槽以将活动的护壕区域彼此分开并与虚拟的护城河区域分离。 虚拟护城河区域包括具有几何尺寸和形状的虚拟窗户结构，其类似于用于基座和/或发射器窗口的活动窗口结构的几何尺寸和形状。

    Method of fabricating complementary bipolar transistors with SiGe base regions
    4.
    发明申请
    Method of fabricating complementary bipolar transistors with SiGe base regions 有权
    用SiGe基极区制造互补双极晶体管的方法

    公开(公告)号：US20050014341A1

    公开(公告)日：2005-01-20

    申请号：US10822078

    申请日：2004-04-08

    申请人： Badih El-Kareh ,  Scott Balster ,  Philipp Steinmann ,  Thomas Scharnagl ,  Manfred Schiekofer ,  Carl Willis

    发明人： Badih El-Kareh ,  Scott Balster ,  Philipp Steinmann ,  Thomas Scharnagl ,  Manfred Schiekofer ,  Carl Willis

    IPC分类号： H01L21/331 ,  H01L21/8228

    CPC分类号： H01L29/66242 ,  H01L21/82285

    摘要： In a method of fabricating complementary bipolar transistors with SiGe base regions the base regions of the NPN and PNP transistors are formed one after the other over two collector regions 20, 14 by epitaxial deposition of crystalline silicon-germanium layers 32a, 36a. With this method the germanium profile of the SiGe layers can be freely selected for both NPN and PNP transistors in thus enabling complementary transistor performance to be optimized individually. The SiGe layers 32a, 36a can be doped with an n-type or p-type dopant during or after deposition of the silicon-germanium layers 32a, 36a.

    摘要翻译： 在制造具有SiGe基极区域的互补双极晶体管的方法中，NPN和PNP晶体管的基极区域通过晶体硅 - 锗层32a，36a的外延沉积而在两个集电极区域20,14之间一个接一个地形成。 使用这种方法，可以自由地为NPN和PNP晶体管选择SiGe层的锗分布，从而可以单独优化互补晶体管的性能。 SiGe层32a，36a可以在硅 - 锗层32a，36a沉积期间或之后掺杂n型或p型掺杂剂。

    Method of fabricating complementary bipolar transistors with SiGe base regions
    5.
    发明授权
    Method of fabricating complementary bipolar transistors with SiGe base regions 有权
    用SiGe基极区制造互补双极晶体管的方法

    公开(公告)号：US07144789B2

    公开(公告)日：2006-12-05

    申请号：US10822078

    申请日：2004-04-08

    申请人： Badih El-Kareh ,  Scott Balster ,  Philipp Steinmann ,  Thomas Scharnagl ,  Manfred Schiekofer ,  Carl Willis

    发明人： Badih El-Kareh ,  Scott Balster ,  Philipp Steinmann ,  Thomas Scharnagl ,  Manfred Schiekofer ,  Carl Willis

    IPC分类号： H01L21/8222

    CPC分类号： H01L29/66242 ,  H01L21/82285

    摘要： In a method of fabricating complementary bipolar transistors with SiGe base regions the base regions of the NPN and PNP transistors are formed one after the other over two collector regions 20, 14 by epitaxial deposition of crystalline silicon-germanium layers 32a, 36a. With this method the germanium profile of the SiGe layers can be freely selected for both NPN and PNP transistors in thus enabling complementary transistor performance to be optimized individually. The SiGe layers 32a, 36a can be doped with an n-type or p-type dopant during or after deposition of the silicon-germanium layers 32a, 36a.

    摘要翻译： 在制造具有SiGe基极区域的互补双极晶体管的方法中，NPN和PNP晶体管的基极区域通过外延沉积晶体硅 - 锗层32a，36a而一个接一个地在两个集电极区域20,14之间形成。 使用这种方法，可以自由地为NPN和PNP晶体管选择SiGe层的锗分布，从而可以单独优化互补晶体管的性能。 SiGe层32a，36a可以在硅 - 锗层32a，36a沉积期间或之后掺杂n型或p型掺杂剂。

    Stacked capacitor and method of fabricating same
    10.
    发明申请
    Stacked capacitor and method of fabricating same 有权
    堆叠电容器及其制造方法

    公开(公告)号：US20070069269A1

    公开(公告)日：2007-03-29

    申请号：US11549248

    申请日：2006-10-13

    申请人： Scott Balster ,  Badih El-Kareh ,  Philipp Steinmann ,  Christoph Dirnecker

    发明人： Scott Balster ,  Badih El-Kareh ,  Philipp Steinmann ,  Christoph Dirnecker

    IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L29/76 ,  H01L31/119

    CPC分类号： H01L28/40 ,  H01L27/0629 ,  H01L27/0805

    摘要： The invention relates to a stacked capacitor (10) comprising a silicon base plate (16), a poly-silicon center plate (32) arranged above the base plate (16), a lower gate-oxide dielectric (26) arranged between the base plate (16) and the center plate (32), a cover plate (36) made of a metallic conductor and arranged above the center plate (32), and an upper dielectric (34) arranged between the center plate (32) and the cover plate (36). The cover plate (36) and the base plate (16) are electrically connected to each other and together form a first capacitor electrode. The center plate (32) forms a second capacitor electrode. The invention further relates to an integrated circuit with such a stacked capacitor, as well as to a method for fabrication of a stacked capacitor as part of a CMOS process.

    摘要翻译： 本发明涉及一种堆叠式电容器（10），包括硅基板（16），布置在基板（16）上方的多晶硅中心板（32），下栅极氧化物电介质（26） 板（16）和中心板（32），由中心板（32）上方布置的金属导体制成的盖板（36）和布置在中心板（32）和 盖板（36）。 盖板（36）和基板（16）彼此电连接并一起形成第一电容器电极。 中心板（32）形成第二电容器电极。 本发明还涉及具有这种堆叠电容器的集成电路，以及作为CMOS工艺的一部分的用于制造堆叠电容器的方法。