Particle coating
    2.
    发明授权

    公开(公告)号:US11261526B2

    公开(公告)日:2022-03-01

    申请号:US16331738

    申请日:2016-09-16

    Applicant: Picosun Oy

    Inventor: Marko Pudas

    Abstract: An atomic layer deposition (ALD) method in an ALD reactor including a reaction chamber housing a substrate vessel, and an isolated vibration source outside of the reaction chamber or isolated within the reaction chamber. Particulate material within the substrate vessel is coated by self-saturating surface reactions using a top-to-bottom precursor flow passing through the substrate vessel, and movements are caused in the particulate material within the substrate vessel by the isolated vibration source while coating the particulate material.

    Implant coating
    6.
    发明授权

    公开(公告)号:US11241316B2

    公开(公告)日:2022-02-08

    申请号:US16830918

    申请日:2020-03-26

    Applicant: PICOSUN OY

    Abstract: A medical implant structure is provided comprising a substrate 10 with at least a first surface and a second surface that surfaces differ from one another with regard to at least one property in relation to biological material.

    Anti-counterfeit signature
    7.
    发明授权

    公开(公告)号:US10600058B2

    公开(公告)日:2020-03-24

    申请号:US14899871

    申请日:2013-06-27

    Applicant: PICOSUN OY

    Inventor: Marko Pudas

    Abstract: A method for applying an anti-counterfeit signature on a product, and an anti-counterfeit signature. The method includes selecting a substrate and a type of signature and forming a signature of the selected type on the substrate with atomic layer deposition, ALD, wherein forming the signature includes applying at least one layer having a predetermined property configured to be detected with an analysis method on the substrate by atomic layer deposition, ALD.

    Substrate processing methods and apparatus

    公开(公告)号:US12297535B2

    公开(公告)日:2025-05-13

    申请号:US17615171

    申请日:2019-06-06

    Applicant: Picosun Oy

    Abstract: A method and a substrate processing apparatus including a vertical flow reaction chamber, a flow guiding part and a substrate support at a horizontally central area of the reaction chamber, the substrate support residing underneath the flow guiding part, and the flow guiding part forcing the vertical flow from above the flow guiding part to go round the flow guiding part on its downward way towards the substrate support.

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